GC20MPS12-220 GENESIC | Alldatasheet
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Technical content
Features
High Avalanche (UIS ) Capability E nhanced S urge C urrent C apability S uperior F igure of Merit QC/IF Low Thermal R esistance 175 ° C Maximum Operating Temperature Temperature Independent S witching Behavior Positive Temperature C oefficient of VF E xtremely F ast S witching S peeds Advantages Low S tandby Power Losses Improved Circuit E fficiency (Lower Overall C ost) Low S witching Losses E ase of Paralleling without Thermal R unaway S maller Heat S ink R equirements Low R everse R ecovery C urrent Low Device C apacitance Low R everse Leakage C urrent Absolute Maximum R atings (At T Parameter R epetitive Peak R everse Voltage Continuous F orward Current Non-R epetitive Peak Forward S urge Current, Half S ine Wave R epetitive Peak Forward S urge C urrent, Half S ine Wave Non-R epetitive Peak Forward S urge Current i2t Value Non-R epetitive Avalanche E nergy Diode R uggedness Power Dissipation Operating and S torage Temperature www.genesicsemi.com/schottky_ mps/GC20MPS 12 -220.pdf S chottky Diode Package 175 ° C Maximum Operating Temperature Temperature Independent S witching Behavior F TO-220-2
Applications
Overall C ost) of Paralleling without Thermal R unaway Boost Diode in Power Factor Correction (PF C) S witched Mode Power S upply (S MPS ) Uninterruptible Power S upply (UPS ) Motor Drives Freewheeling / Anti- parallel Diode in Inverters S olar Inverters E lectric Vehicles (E V) & C harging Induction Heating & W elding (At T C = 25 ° C Unless Otherwise S tated) S ymbol Conditions Values VR R M 1200 IF TC = 25 ° C, D = 1 94 TC = 135 ° C, D = 1 46 TC = 165 ° C, D = 1 20 IF ,S M TC = 25 ° C, tP = 10 ms 120 TC = 150 ° C, tP = 10 ms 96 IF ,R M TC = 25 ° C, tP = 10 ms 82 TC = 150 ° C, tP = 10 ms 55 IF ,max T C = 25 ° C, tP = 10 µ s 1100 ∫i2 dt T C = 25 ° C, tP = 10 ms 72 E AS L = 1 mH, I AS = 20 A 220 dV/dt V R = 0 ~ 960 V 100 Ptot T C = 25 ° C 597 Tj , T stg - 55 to 175 VR R M IF (Tc = 135° C) QC A K Case Page 1 of 7 Boost Diode in Power Factor Correction (PF C) S witched Mode Power S upply (S MPS ) Uninterruptible Power S upply (UPS ) parallel Diode in Inverters E lectric Vehicles (E V) & C harging S tations Values Unit 1200 V A 120 A A 1100 A A2s 220 mJ
100 V/ns
55 to 175 ° C = 1200 V C) = 46 A = 66 nC
1 2 0 0 V Si / a t S™ 5i o de Dec 2018 R ev 1.0 www.genesicsemi.com/schottky_ mps/GC20MPS 12 E lectrical Characteristics Parameter Diode Forward Voltage R everse Current Total Capacitive C harge S witching Time Total Capacitance Thermal / Mechanical Characteristics Thermal R esistance, J unction - Case Weight Mounting Torque www.genesicsemi.com/schottky_ mps/GC20MPS 12 -220.pdf S ymbol C onditions Values Min. Typ . VF IF = 20.0 A, T j = 25 ° C 1.5 IF = 20.0 A, T j = 175 ° C 2 IR VR = 1200 V, T j = 25 ° C 1.8 VR = 1200 V, T j = 175 ° C 5.4 QC IF ≤ IF,MAX dIF/dt = 200 A/μ s Tj = 175 ° C VR = 400 V VR = 800 V 79 ts VR = 400 V < 10 VR = 800 V C VR = 1 V, f = 1 MHz, T j = 25 ° C 12 98 VR = 800 V, f = 1 MHz, T j = 25 ° C 83 Characteristics R thJ C 0.2 2 WT 2 TM 0.8 Page 2 of 7 Values Unit . Max. 1.8 V 2.4 µ A 64.8 nC 10 ns pF 2 ° C/ W g Nm
1 2 0 0 V Si / a t S™ 5i o de Dec 2018 R ev 1.0 www.genesicsemi.com/schottky_ mps/GC20MPS 12 IF = f(V F,T j); tP = 10 µ s F igure 1: Typical F orward C haracteristics IR = f(V R ,T j) F igure 3: Typical R everse Characteristics www.genesicsemi.com/schottky_ mps/GC20MPS 12 -220.pdf IF = f(V F,T j); tP = 1 F igure 1: Typical F orward C haracteristics F igure 2: Typical High C urrent F orward Characteristics Ptot = f(T C) F igure 3: Typical R everse Characteristics F igure 4: Power Derating Curve Page 3 of 7 = 10 µ s F igure 2: Typical High C urrent F orward Characteristics Power Derating Curve
1 2 0 0 V Si / a t S™ 5i o de Dec 2018 R ev 1.0 www.genesicsemi.com/schottky_ mps/GC20MPS 12 IF = f(T C); D = tP/T, tP= 10 µ s F igure 5: Current Derating Curves(T Qc = f(V R ); T j = 25 ° C; f = 1 F igure 7: Typical C apacitive Charge vs Voltage C haracteristics www.genesicsemi.com/schottky_ mps/GC20MPS 12 -220.pdf = 10 µ s C = f(V R ); T j = 25 ° C; f = 1 F igure 5: Current Derating Curves(T j = 206 ° C) F igure 6: Typical J unction C apacitance vs R everse Voltage C haracteristics MHz E C = f(V R ); T j = 25 ° C ; f = 1 7: Typical C apacitive Charge vs R everse Voltage C haracteristics F igure 8: Typical C apacitive E nergy vs Voltage C haracteristics Page 4 of 7 ; f = 1 MHz F igure 6: Typical J unction C apacitance vs R everse Voltage C haracteristics = 25 ° C ; f = 1 MHz 8: Typical C apacitive E nergy vs R everse Voltage C haracteristics
1 2 0 0 V Si / a t S™ 5i o de Dec 2018 R ev 1.0 www.genesicsemi.com/schottky_ mps/GC20MPS 12 F igure 9: Transient Thermal Impedance IF = f(V F, T j) F igure 10: Forward C urve Model www.genesicsemi.com/schottky_ mps/GC20MPS 12 -220.pdf Zth,jc = f(tP,D); D = t P/T F igure 9: Transient Thermal Impedance IF = (V F – V BI)/R DIF F Built-In Voltage (V VBI(T j) = m* Tj + n (V) Differential R esistance (R R DIFF (T j) = a* Tj 2 + b* T : Forward C urve Model Page 5 of 7 DIF F (A) Voltage (V BI): n (V) 03, n = 1.01 Differential R esistance (R DIFF ): + b* Tj + c (Ω); 04, c = 0.0223
1 2 0 0 V Si / a t S™ 5i o de Dec 2018 R ev 1.0 www.genesicsemi.com/schottky_ mps/GC20MPS 12 Package Dimensions TO -220-2L R ecommended S older Pad Layout NOTE 1. CONTR OLLE D DIME NS ION IS INCH. DIME NS ION IN BRACKE T IS MILLIME TE R. 2. DIME NS IONS DO NOT INCLUDE E ND F LAS H, MOLD F LAS H, MATE R IAL PROTRUS IONS www.genesicsemi.com/schottky_ mps/GC20MPS 12 -220.pdf Package Outline 1. CONTR OLLE D DIME NS ION IS INCH. DIME NS ION IN BRACKE T IS MILLIME TE R. INCLUDE E ND F LAS H, MOLD F LAS H, MATE R IAL PROTRUS IONS Page 6 of 7
1 2 0 0 V Si / a t S™ 5i o de Copyright © 2018 GeneS iC S emiconductor Inc. All Rig hts R eserved The information in this document is subject to chan ge without notice Dec 2018 R ev 1.0 R oHS Compliance The levels of R oHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted applica tion, in accordance with E U Directive 2011/65/E C (R oHS this product can be obtained from your GeneS iC R E ACh C ompliance R E ACh substances of high concern (S VHCs) information is a vailable for this product. S ince the E uropean Chemical Agency (E C HA) has published notice of thei r intent to frequently revise the S VHC listing for the foreseeable future, please contact a GeneS iC Declaration. R E AC h banned substance information ( This product has not been designed or tested for use in, and is not intended for use in, applicatio the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life cardiac defibrillators or similar emergency medical equipme nt, aircraft navigation or communication or control systems, or air traffic control systems. GeneS iC disclaims all and any warranty and liability arising out of use or application of any product. No lice express or implied to any intellectual property rights is granted by this document. R elated Links S oldering Document: http://www.genesicsemi.com/ Tin-whisker R eport: http://www.genesicsemi.com/ R eliability R eport: http://www.genesicsemi.com/ Copyright © 2018 GeneS iC S emiconductor Inc. All Rig hts R eserved The information in this document is subject to chan ge without notice GeneS iC S emiconductor, Inc.
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restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted applica tion, in h E U Directive 2011/65/E C (R oHS ), as implemented November 15, 2017 . R oHS Declarations for GeneS iC representative. substances of high concern (S VHCs) information is a vailable for this product. S ince the E uropean Chemical Agency (E C HA) has published notice of thei r intent to frequently revise the S VHC listing for the GeneS iC representative to insure you get the most up- banned substance information (R E AC h Article 67) is also available upon request. This product has not been designed or tested for use in, and is not intended for use in, applicatio the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life defibrillators or similar emergency medical equipme nt, aircraft navigation or communication or control GeneS iC disclaims all and any warranty and liability arising out of use or application of any product. No lice express or implied to any intellectual property rights is granted by this document. http://www.genesicsemi.com/technical-support/quality / http://www.genesicsemi.com/technical-support/compliance/ http://www.genesicsemi.com/technical-support/reliability/ Published by GeneS iC S emiconductor, Inc. Dulles, VA 20166 Page 7 of 7 restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted applica tion, in . R oHS Declarations for substances of high concern (S VHCs) information is a vailable for this product. S ince the E uropean Chemical Agency (E C HA) has published notice of thei r intent to frequently revise the S VHC listing for the -to-date R E AC h S VHC Article 67) is also available upon request. This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, defibrillators or similar emergency medical equipme nt, aircraft navigation or communication or control GeneS iC disclaims all and any warranty and liability arising out of use or application of any product. No lice nse,