GBU10005 KEXIN | Alldatasheet
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www.kexin.com.cn 1 Diodes Bridge Rectifier ■ Features
- Io=10A
- VRRM 50V-1000V
- Glass passivated chip
- High surge forward current capability GBU10005 ~ GBU1010 Dimensions in inches and (millimeters) - + .880(22.3) .860(21.8) .740(18.8) .720(18.3) .710(18.0) .690(17.5) .210(5.33) .190(4.83) .050(1.27) .040(1.02) .022(0.56) .018(0.46) .160(4.1) .140(3.5) .310(7.90) .290(7.40) .085(2.16) .065(1.65) .080(2.03) .060(1.52) .100(2.54) .081(2.06) .104(2.66) .094(2.40) .140(3.56) .130(3.30) .210(5.33) .190(4.83) .210(5.33) .190(4.83) DIP AC ■ Absolute Maximum Ratings Ta = 25℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions GBU10 Min Typ Max Unit 005 50 01 100 02 200 04 400 06 600 08 800 10 1000 Forward voltage VFM 1.1 Reverse voltage leakage current IRRM 10 uA VRM=VRRM d V Reverse breakdown voltage VR IR= 100uA IF= 5A 005 01 02 04 06 08 10 Repetitive peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 V Dielectric Strength Vdis KV Average Rectified Output Current 60Hz sine wave,R-load Ta=80℃ Surge(Non-repetitive) Forward Current IFSM Current Squared Time 1ms≤t<8.3ms Rating of per diode RthJA RthJC Junction Temperature Tj Storage Temperature Tstg A S Item Symbol Io 3.6 200 I t -55 to 150 GBU10 Unit 2.3 150 ℃ /W A 1662 2 Thermal Resistance Junction to Ambient Thermal Resistance Junction to Case
www.kexin.com.cn2 Dio des Bridge Rectifier GBU10005 ~ GBU1010 ■ Typical Characterisitics 800 Io(A) Tc( ) FIG1:Io-Tc Curve 160 sine wave R-load with heatsink 90 100 110 120 130 140 150 Tcheatsink 0.1 0.2 0.5 VF(V) IF(A) FIG3: Forward Voltage 1.0 5.0 Ta=25¥ 0 20 40 60 80 100 0.01 0.1 1.0 100 Voltage(%) IR(uA) Tj=150 Tj=25℃ FIG4:Typical Reverse Characteristics IFSM(A) 2 5 10 20 50 100 100 200 300 sine wave non-repetitive Tj=25 FIG2:Surge Forward Current Capadility Number of Cycles 0 8.3ms 1cycle IFSM 8.3ms