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GLASS PASSIVATED BRIDGE RECTIFIER Reverse Voltage - 50 to 1000 Volts Forward Current - 10.0 Ampere FE A TURES MECHANICAL D A T A MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.

  • Glass passivated chip junction
  • Ideal for printed circuit board
  • Low reverse leakage current
  • Low forward voltage drop
  • Case:Molded plastic, GBU
  • Terminals : Terminals: Leads solderable per MIL-STD-202 method 208 guaranteed
  • Epoxy: UL 94V-0 rate flame retardant
  • Mounting Position: Any Reliable low cost construction utilizing molded plastic technique
  • High surge current capabiliy Parameter Symbols GBU 10005 GBU 1001 GBU 1002 GBU 1004 GBU 1006 GBU 1008 GBU

1010 Units

Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 V Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 V Maximum Average Forward Rectified Current with Heatsink at TC = 100 OC I(AV) Peak Forward Surge Current, 8.3 ms Single Half-Sine -Wave superimposed on rated load (JEDEC Method) IFSM 250 A Maximum Forward Voltage at 5.0 A DC and 25 OC VF 1.0 V Maximum Reverse Current at TA = 25 OC at Rated DC Blocking Voltage TA = 125 OC IR 5.0 500 µA Typical Junction Capacitance 1) CJ 70 pF Typical Thermal Resistance 2) RθJC 2.2 OC/W Operating and Storage Temperature Range TJ,TS -55 to +150 OC 1) Measured at 1 MHz and applied reverse voltage of 4 VDC. 2) Thermal resistance from junction to case with device mounted on 300 mm X 300 mm X 1.6 mm Cu plate heatsink. 10.0 A GBU

RATINGS AND CHARACTERISTIC CURVES 0.1 1.0 100 0.20 0.6 1.0 1.8 )A( TNERRUC DRA WROF SUOENATNATSNI,IF V , INSTANTANEOUS FORWARD VOLTAGE(V) Fig. 2 Typical Forward Characteristics, per element F T = 25 Cj ° 1.4 100 200 250 1 10 100 )A( TNERRUC EGRUS DRA WROF KAEP, I MSF NUMBER OF CYCLES AT 60Hz Fig. 3 Maximum Non-Repetitive Surge Current Single Half-Sine Wave (JEDEC Method) T = 25 Cj ° 150 0 50 100 150 )A( TNERRUC DEIFITCER DRA WROF GVA, I )VA( T , CASE TEMPERATURE ( C) Fig. 1 Forward Current Derating Curve C ° Resistive or Inductive Load 100 1000 0.1 1.0 10 100 C O )Fp( ECNATICAPACLAT T V , REVERSE VOLTAGE (V) Fig. 4 Typical Total Capacitance, per element R T = 25 Cj ° f=1.0MHz