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! Diffused J unction ! High Current Capability ! High Reliability Mechanical Da ta ! Ter m inals: Plated Leads Solderable per ! Mounting Position: Any ! Marking: Type Number Maximum Ra t ings and Electrical Characteristics @T A=25°C unl ess otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol GBP 301 GBP 302 GBP 303 GBP 304 GBP 305 GBP 306 GBP
307 Unit
Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 50 100 200 400 600 800 1000 V RMS Revers e Voltage VR(RMS) 35 70 140 280 420 560 700 V Average Rec tified Output Current ( N o t e 1 ) @ TA = 50°C IO 3.0 A Non-Repetit ive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFSM 80 A Forward Volt age (per element) @IF = 2.0A VFM 1.1 V P e ak R e v e r s e C u r r e n t @ TA = 25°C A t Rated DC Blocking Voltage @TA = 100°C IRM 500 µA Typi cal Thermal Resistance (Note 3) R /G01JA 30 K/W Operating and S torage Temperature Range Tj, TSTG -55 to +150 °C Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case. 3. Thermal resistance junction to ambient mounted on PC board with 12mm2 copper pad. 1 of 2 GBP301 – GBP307 ! Lead Fr ee: For RoHS / Lead Free Version Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com Dimensions in inches and (milimeters) GBP 0.1 44(3.65)0.0 43(1.1)0.58 1(14.75) 0.561(14.25) 0.4 02(10.2) 0.4 17(10.6) 0.08 7(2.2) 0.07 1(1.8) 0.5 63(14.3) 0.583(14. 0.056 (1.42) 0.048(1.22) 0.1 6(4.06) 0.14(3.56) 0.0 34(0.86) 0.022(0 .55) 0.012(0.3) 0.03(0.76) Alldatasheet
0.1 1.0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 I , INST ANTANEOUS FWD CURRENT (A) F V , INSTA NTANEOUS FWD VOLTAGE (V) Fig. 2 T ypical Fwd Characteristics F T = 150°CJ T = 25°CJ Pulse W idth = 300 µs 100 1 10 100 I , P EAK FWD SURGE CURRENT (A) FSM NUM B ER OF CYCLES AT 60 Hz Fig. 3 Ma x Non-Repetitive P eak Fwd Surge Curren t T = 150° c Single Half Sine Wave (JEDEC Method) j 100 11 0 1 00 C , JUNCTION CAP ACITANCE (pF) j V , REVERSE VOLT AGE (V) Fig . 4 Typical Junction Capacitance R T = 25°C 1MHz j 0.01 0.1 1.0 100 1000 10,000 0 20 40 60 80 100 120 140 I , INST ANT ANEOUS REVERSE CURRENT (mA) R PERCENT OF RA TE D PEAK REVERSE VOLTAGE (%) Fig. 5 TypicalReverse Characteristi cs T = 125°Cj T = 100°Cj T = 25°Cj T = 150°Cj 1.0 2.0 3.0 0 75 150 225 I , A VERAGE RECTIFIED CURRENT (A) O T, TEMP ERATURE (°C) Fig. 1 ForwardCurrent Derating Curve GBP301 – GBP307 2 of 2 GBP301 – GBP307 Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com Alldatasheet