GBJ8A WTE | Alldatasheet
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Features
! Glass Passivated Die Construction ! L o w F o r w a r d V o l t a g e D r o p A ! H i g h C u r r e n t C a p a b i l i t y G ! High Reliability ! H i g h S u r g e C u r r e n t C a p a b i l i t y B ! Ideal for Printed Circuit Boards C + ~ ~ - ! Recognized File # E157705 /G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01H K D J E Mechanical Data P R R ! Case: GBJ-6, Molded Plastic ! Terminals: Plated Leads Solderable per M MIL-STD-202, Method 208 N ! Polarity: As Marked on Body ! Weight: 7.0 grams (approx.) ! M o u n t i n g P o s i t i o n : A n y S G ! Mounting Torque: 10 cm-kg (8.8 in-lbs) Max. ! Lead Free: For RoHS / Lead Free Version, Add “-LF” Suffix to Part Number, See Page 4 T L Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol GBJ8A GBJ8B GBJ8D GBJ8G GBJ8J GBJ8K GBJ8M Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 50 100 200 400 600 800 1000 V RMS Reverse Voltage V R(RMS) 35 70 140 280 420 560 700 V Average Rectified Output Current @T C = 110°C (Note 1) IO 8.0 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFSM 200 A Forward Voltage per diode @I F = 4.0A V FM 1.0 V Peak Reverse Current @T A = 25°C At Rated DC Blocking Voltage @T A = 125°C IR 250 µA Typical Thermal Resistance per leg (Note 2) R /G01JA 26 °C/W Typical Thermal Resistance per leg (Note 1) R /G01JC 2.8 °C/W Operating and Storage Temperature Range T j, TSTG -55 to +150 °C Note: 1. Device mounted on 100 x 100 x 1.6mm thick Al plate heatsink. WTE POWER SEMICONDUCTORS GBJ-6 Dim Min Max A 29.7 30.3 B 19.7 20.3 C —5 . 0 D 17.0 18.0 E 3.8 4.2 G 3.1Ø 3.4Ø H 2.3 2.7 J 0.9 1.1 K 1.8 2.2 L 0.6 0.8 M 4.4 4.8 N 3.4 3.8 P 9.8 10.2 R 7.3 7.7 S 10.8 11.2 T 2.3 2.7 All Dimensions in mm
GBJ8A – GBJ8M 2 of 4 © 2006 Won-Top Electronics 0.1 1.0 100 I , INSTANTANEOUS FORWARD CURRENT (A)F V , INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Fwd Characteristics, per element F T = 25 Cj ° Pulse width = 300 sµ 1.4 100 150 200 1 10 100 I , PEAK FORWARD SURGE CURRENT (A)FSM NUMBER OF CYCLES AT 60 Hz Fig. 3 Maximum Non-Repetitive Surge Current T= 2 5Cj ° Single half-sine-wave (JEDEC method) 25 50 75 100 125 150 I , AVERAGE RECTIFIED CURRENT (A)O T , TEMPERATURE ( C) Fig. 1 Forward Current Derating Curve Resistive or Inductive load Heatsink 100 1 10 100 C , JUNCTION CAPACITANCE (pF)j V , REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance R f = 1.0MHz T= 2 5Cj °
GBJ8A – GBJ8M 3 of 4 © 2006 Won-Top Electronics MARKING INFORMATION PACKAGING INFORMATION Tube Size L x W x H (mm) Quantity (PCS) Inner Box Size L x W x H (mm) Quantity (PCS) Carton Size L x W x H (mm) Quantity (PCS) Approx. Gross Weight (KG) 475 x 40 x 7 15 490 x 145 x 135 750 510 x 305 x 160 1,500 16.0 Note: 1. Anti-static tube, water clear color. BULK G B J 8 x WTE = Manufacturer’s Logo GBJ8x = Device Number x = A, B, D, G, J, K or M Polarity = As Marked on Body + ~ ~ - WTE
GBJ8A – GBJ8M 4 of 4 © 2006 Won-Top Electronics
ORDERING INFORMATION
Product No. Package Type Shipping Quantity GBJ8A SIL Bridge 15 Units/Tube GBJ8B SIL Bridge 15 Units/Tube GBJ8D SIL Bridge 15 Units/Tube GBJ8G SIL Bridge 15 Units/Tube GBJ8J SIL Bridge 15 Units/Tube GBJ8K SIL Bridge 15 Units/Tube GBJ8M SIL Bridge 15 Units/Tube 1. Shipping quantity given is for minimum packing quantity only. For minimum order quantity, please consult the Sales Department. 2. To order Lead Free version (with Lead Free finish), add “-LF” suffix to part number above. For example, GBJ8A-LF. Won-Top Electronics Co., Ltd (WTE) has checked all information carefully and believes it to be correct and accurate. However, W TE cannot assume any responsibility for inaccuracies. Furthermore, this information does not give the purchaser of semiconductor devices any license under patent rights to manufacturer. WTE reserves the right to change any or all information herein without further notice. WARNING: DO NOT USE IN LIFE SUPPORT EQUIPMENT. WTE power semiconductor products are not authorized for use as critical components in l ife support devices or systems without the express written approval. We power your everyday. Won-Top Electronics Co., Ltd. No. 44 Yu Kang North 3rd Road, Chine Chen Dist., Kaohsiung, Taiwan Phone: 886-7-822-5408 or 886-7-822-5410 Fax: 886-7-822-5417 Email: sales@wontop.com Internet: http://www.wontop.com