GBJ8005 YEASHIN | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
http://www.yeashin.com 1 REV.02 20120305 GBJ8005 THRU GBJ810 8.0A GLASS PASSIVATED BRIDGE RECTIFIER
FEATURES
‧Glass Passivated Die Construction ‧High Case Dielectric Strength of 1500VRMS ‧Low Reverse Leakage Current ‧Surge Overload Rating to 170A Peak ‧Ideal for Printed Circuit Board Applications ‧Plastic Material - UL Flammability Classification 94V-0 ‧UL Listed Under Recognized Component Index, File Number E94661 ‧High temperature soldering : 260 O C / 10 seconds at terminals ‧Pb free product at available : 99% Sn above meet RoHS environment substance directive request MECHANICAL DATA ‧Case: Molded Plastic ‧Terminals: Plated Leads, Solderable per MIL-STD-202, Method 208 ‧Polarity: Molded on Body ‧Mounting: Through Hole for #6 Screw ‧Mounting Torque: 5.0 in-lbs Maximum ‧Weight: 6.6 grams (approx.) ‧Marking: Type Number Maximum Ratings and Electrical Characteristics @ TA = 25℃ unless otherwise specified GBJ Dim Min Max A 29.70 30.30 B 19.70 20.30 C 17.00 18.00 D 3.80 4.20 E 7.30 7.70 G 9.80 10.20 H 2.00 2.40 I 0.90 1.10 J 2.30 2.70 K 3.0 X 45° L 4.40 4.80 M 3.40 3.80 N 3.10 3.40 P 2.50 2.90 R 0.60 0.80 S 10.80 11.20 All Dimensions in mm Single phase, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol GBJ 8005 GBJ 801 GBJ 802 GBJ 804 GBJ 806 GBJ 808 GBJ 810 Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 50 100 200 400 600 800 1000 V RMS Reverse Voltage VR(RMS) 35 70 140 280 420 560 700 V Average Forward Rectified Output Current @ TC= 110℃ IO 8.0 A Non-Repetitive Peak Forward Surge Current, 8.3 ms single half-sine-wave superimposed on rated load (JEDEC method) IFSM 170 A Forward Voltage per element @ IF = 4.0A VFM 1.0 V Peak Reverse Current @TC = 25℃ at Rated DC Blocking Voltage @ TC = 125℃ IR 5.0 500 μ A I2t Rating for Fusing (t < 8.3ms) (Note 1) I2t 120 A2s Typical Junction Capacitance per Element (Note 2) Cj 55 pF Typical Thermal Resistance, Junction to Case (Note 3) R_JC 1.8 ℃/W Operating and Storage Temperature Range Tj, TSTG -55 to +150 ℃ Notes: 1. Non-repetitive, for t > 1.0ms and < 8.3ms. 2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC. 3. Thermal resistance from junction to case per element. Unit mounted on 100 x 100 x 1.6mm aluminum plate heat sink. B C D EEG H K J I L M N P R S A
http://www.yeashin.com 2 REV.02 20120305 GBJ8005 THRU GBJ810 DEVICE CHARACTERISTICS 0.01 0.1 1.0 V , INSTANTANEOUS FORWARD VOLTAGE (V) Fig.2 T ypical Forward Characteristics (per element) F I , INSTANTANEOUS FOR WARD CURRENT (A) F T = 25 C j Pulse width = 300 sµ 120 160 180 1 10 100 I , PEAK FWD SURGE CURRENT (A) FSM NUMBER OF CYCLES AT 60 Hz Fig. 3 Maximum Non-Repetitive Sur ge Current T = 150 C j Single half-sine-wave (JEDEC method) 100 1 10 100 C , JUNCTION CAP ACITANCE (pF) j V , REVERSE VOLTAGE (V) Fig.4 T ypical Junction Capacitance R f = 1MHz T = 25 C j 0.1 1.0 100 1000 02 04 0 6 0 8 0 100 120 140 I , INST ANT ANEOUS REVERSE CURRENT R µ PERCENT OF RATED PEAK REVERSE VOLTAGE (%) T = 50 C j T = 125 C j T = 100 C j T = 25 C j 25 50 75 100 125 150 I , AVERAGE RECTIFIED CURRENT (A) O T , CASE TEMPERATURE ( C) Fig. 1 Forward Current Deratin g Curve C With heatsink Without heatsink Resistive or Inductive load