GBJ8005_V01 CHENDA | Alldatasheet
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DN:T19812A0 https://www.microdiode.com Rev:2019A0 Page :1 Reverse Voltage - 50 to 1000 Volts Forward Current - 8.0 Amperes GBJ8005 THRU GBJ810 Feat ures Maximum Ratings And Electrical Characteristics Ratings at 25°C ambient temperature unless otherwisespecified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. Mechanical Data Ideal for printed circuit board Reliable low cost construction utilizing molded plastic technique Plastic material has U/L lammability classification 94V-0 Low forward voltage drop,high current capability Case : JEDEC GBJ Molded plastic body Terminals : Solder plated, solderable per MIL-STD-750,Method 2026 Polarity : Polarity symbol marking on body Mounting Position : Any Dimensions in inches and (millimeters) Parameter SYMBOL S GBJ 8005 GBJ 801 GBJ 802 GBJ 804 GBJ 806 GBJ 808 GBJ
810 UNITS
mum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS voltage VRMS 35 70 140 280 420 560 700 V Maxi mum DC blocking voltage VDC 50 100 200 400 600 800 1000 V Maximum average forward(with heatsink NOTE 2) Rectified current @T c =100°C(without heatsink) I(AV) 8.0 3.4 A Peak forward surge current 3ms single half sine-wave superimposed on rated load (JEDEC Method) IFSM 200.0 A Rati ng for Fusing(t<8.3ms) I t 166.0 A s Maximum forward voltage at 4.0A VF 1.0 V Maximum DC reverse current TA=25°C at rated DC blocking voltage TA=125°C IR 10 μA 500 μA Typical J unction Capacitance (Note 1) CJ 55 pF Typical Thermal Resistance (Note 2) RθJA 1.8 °C/W Operating junction temperature range TJ - 5 5to+ 1 5 0 °C storage temper ature range TSTG - 5 5to+ 1 5 0 °C NOTES: 1.Mea sured at 1.0MHz and applied reverse voltage of 4.0V DC. 2.Device mounted on 75mm*75mm*1.6mm cu plate heatsink. 3.The typical data above is for reference only. ? .122(3.1) .134(3.4) .425( 10. .441(11.2) .031(0.8) .023(0 .6) .098(2.5) .114(2.9) ? .134( 3.4) ? .122(3.1) .189(4.8) .173 (4.4) .134(3.4) .150(3.8) .708(1 8.0) .669(17.0) .800(20.3) .776(19.7) (5.1) .198 .386(9. .287(7.3).287(7.3) .303(7.7) SPACING .043(1.1) .035(0.9) .078(2.0) .094(2.4) .106(2.7) .096(2.3) 1.169(29.7) 1.193(30.3) + ~ ~ _ .165( 4. .142(3.6) .118(3.0)*45° MAX GBJ
Rev:2019A0 Page :2 Ratings And Characteristic Curves The curve above is for reference only. https://www.microdiode.com Reverse Voltage - 50 to 1000 Volts Forward Current - 8.0 Amperes GBJ8005 THRU GBJ810 1000 100 1.0 0.1 02 0 40 60 80 100 PERCENT OF RATED PEAK REVERSE VOLTAGE,(%) INSTANTANEOUS REVERSE CURRENT ,(uA) FIG.5-TYPICAL REVERSE CHARACTERISTICS TJ=125°C TJ=100°C TJ=50°C TJ=25°C FIG.3-TYPICAL JUNCTION CAPACITANCE REVERSE VOLTAGE,(VOLTS) CAPACITANCE,(pF) 10.0 1001.0 1.0 100 TJ=25°C,f=1MHZ FIG.1-FORWARD CURRENT DERATING CURVE CASE TEMPERATURE, °C AVERAGE FORWARD CURRENT AMPERES SINGLE PHASE HALF WAVE 60Hz RESISTIVE OR INDUCTIVE LOAD WITH HEATSINK WITHOUT HEATSINK 60 120 1401008040200 7.0 1.0 6.0 3.0 4.0 2.0 5.0 8.0 NUMBER OF CYCLETS AT 60Hz PEAK FORWARD SURGE CURRENT, AMPERES FLG.2-MAXIMUM NON-REPETITIVE SURGE CURRENT 10 100 200 225 100 150 2 50205 PULSE WIDTH 8.3ms SINGLE HALF-SINE-WAVE (JEDEC METHOD) INSTANTANEOUS FORWARD VOLTAGE,VOLTS FIG.4-TYPICAL FORWARD CHARACTERISTICS INSTANTANEOUS FORWARD CURRENT, (A) 100 0.1 1.0 TJ = 25°C PULSE WIDTH 300us