KBJ610 ETC1 | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 2

Technical content

1.0 500 SIYU R V µA pF IR Cj 最大正向电压 IF = 3.0A 最大反向电流 TA= 25℃ 典型结电容 VR = 4.0V, f = 1MHz 电特性 TA = 25℃ 除非另有规定。 Electrical Characteristics Ratings at 25℃ ambient temperature unless otherwise specified. 单位 Unit 符号 Symbols TA=100℃ Maximum forward voltage Maximum reverse current Type junction capacitance VF -50 --- +150 V V V A A µA ℃/W VRRM VRMS VDC IF(AV) IFSM IR(AV) 极限值和温度特性 TA = 25℃ 除非另有规定。 Maximum Ratings & Thermal Characteristics Ratings at 25℃ ambient temperature unless otherwise specified. 最大可重复峰值反向电压 Maximum repetitive peak reverse voltage 最大均方根电压 Maximum RMS voltage 最大直流阻断电压 Maximum DC blocking voltage 最大正向平均整流电流 Maximum average forward rectified current 峰值正向浪涌电流 8.3ms单一正弦半波 Peak forward surge current 8.3 ms single half sine-wave 最大反向峰值电流 Maximum peak reverse current full cycle 典型热阻 Typical thermal resistance 工作结温和存储温度 符号 Symbols 单位 Unit Operating junction and storage temperature range Tj, TSTG @TA = 75℃ RθJA 塑封硅整流桥堆 反向电压 50---1000V 正向电流 6.0 A 特征 Features

  • 低的反向漏电流 Low reverse leakage
  • 较强的正向浪涌承受能力 High forward surge capability 机械数据 Mechanical Data
  • 封装: 塑料封装 Case: Molded Plastic
  • 极性: 标记模压或印于本体 Polarity: Symbols molded or marked on body
  • 安装位置: 任意 Mounting Position: Any Single-phase Silicon Bridge Rectifier Reverse Voltage 50 to 1000 V Forward Current 6.0 A +~~- .995(25.3) .983(24.7) .134(3.4) .122(3.1) .057(1.45) .041(1.05) .083(2.1) .069(1.7) .043(1.1) .035(0.9) .303(7.7) .287(7.3) .303(7.7) .287(7.3) .074(1.9) .059(1.5) .146(3.7) .130(3.3) .303(7.7) .287(7.3) .708(18.0) .669(17.0) .157 (4.0) .602(15.3) .578(14.7) Unit：inch（mm） .031(0.8) .023(0.6) .114(2.8) .098(2.5) .150(3.8) .134(3.4) .150(3.8) .134(3.4) .189(4.8) .173(4.4) .382(9.7) .366(9.3) ￠.134(8.4) .122(3.1)
  • 重量: 4.6 克 Weight:4.6 Grams
  • 浪涌承受能力：170 A Surge overload rating:170 Amperes peak KBJ601 KBJ602KBJ603 KBJ604 KBJ606KBJ608 KBJ610 GBJ601 GBJ602GBJ603GBJ604 GBJ606GBJ608GBJ610 KBJ601 KBJ602KBJ603 KBJ604 KBJ606KBJ608 KBJ610 GBJ601 GBJ602GBJ603GBJ604 GBJ606GBJ608GBJ610 6.0加散热片TC =111℃ 无散热片Ta=25℃ 2.8 300 300 210 - 125 - 大昌电子 DACHANG ELECTRONICS

R 特性曲线 Characteristic Curves VF Instantaneous Forward Voltage (V) 正向电流 IF(A) 平均正向电流 IF(AV) (A) IF Instantaneous Forward Current (A) IF(A) Average Forward Rectified Current (A) 0 40 80 120 1600 2.0 4.0 1.0 3.0 +~~- P.C.B. on glass-epoxi substrate soldering land 5mmф sine wave R-load free in air 峰值正向浪涌电流 IFSM(A) MAXIMUM NON REPETITIVE PEAK FORWARD SURGE CURRENT Number of Cycles at 60 Hz. IFSM Peak Forward Surge Current (A) FORWARD POWER DISSIPATION FORWARD POWER DISSIPATION PF(W)) 功率损耗 P(W) 10 10002 5 2 0 5 0 200 240 Sine wave Tj=150℃ 12 6 34 FORWARD CURRENT DERATING CURVE 平均正向电流 IF(AV) (A) IF(A) Average Forward Rectified Current (A) 0 40 80 120 1600 +~ ~- Tc-sensing point sine wave R-load with heatsink Tc 160 120 0.1 1.10.6 1.0 Pulse measurement per diode Tl=150℃ Tl=25℃ IFSM 10mS 10mS

1 Cycle

Tj=25℃ before 通过电流的周期 正向电流降额曲线 正向电压 VF(V) 浪涌特性曲线（最大值） 管体温度 TC(°C) Case Temperature Tc(℃) 平均整流电流 I0(A) AVERAGE RECGIFIED FORWARD CURRENT Io(A) 功率损耗曲线 环境温度 Ta(°C) Tamb, ambient temperature (°C) 正向电流降额曲线正向特性曲线（典型值） FORWARD CURRENT DERATING CURVETYPICAL FORWARD CHARACTERISTIC 大昌电子 DACHANG ELECTRONICS - 126 -