GBJ35005 SAMYANG | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 3
Technical content
Features
- UL recognition, file #E230084
- Thin single in-line package
- High surge current capability
- Solder dip 275 °C max. 7 s, per JESD 22-B106 Typical Applications General purpose use in AC/DC bridge full wave rectification for switching power supply, home appliances, office equipment, industrial automation applications. Mechanical Data
- Package: 6KBJ Molding compound meets UL 94 V-0 flammability rating, RoHS-compliant
- Terminals: Tin plated leads, solderable per J-STD-002 and JESD22-B102
- Polarity: As marked on body ■Maximum Ratings (Ta=25℃ Unless otherwise specified) PARAMETER SYMBOL UNIT GBJ35005 GBJ3501 GBJ3502 GBJ3504 GBJ3506 GBJ3508 GBJ3510 Device marking code GBJ35005 GBJ3501 GBJ3502 GBJ3504 GBJ3506 GBJ3508 GBJ3510 Repetitive peak reverse voltage VRRM V 50 100 200 400 600 800 1000 Average rectified output current @60Hz sine wave, R-load, With heatsink Tc =87℃ IO A 35.0 Without heatsink Ta =25℃ 3.5 Surge(non-repetitive)forward current @60Hz half sine wave, 1 cycle, Tj=25℃ IFSM A 350 Current squared time @1ms≤t≤8.3ms Tj=25℃, Rating of per diode I t A2s 508 Storage temperature Tstg ℃ -55 ~+150 Junction temperature Tj ℃ -55 ~+150 Dielectric strength @ terminals to case, AC 1 minute Vdis KV 2.5 Mounting torque @recommend torque:5kg·cm Tor kg· cm 8 ■Electrical Characteristics(Ta=25℃ Unless otherwise specified) PARAMETER SYMBOL UNIT TEST CONDITIONS GBJ35005 GBJ3501 GBJ3502 GBJ3504 GBJ3506 GBJ3508 GBJ3510 Maximum instantaneous forward voltage drop per diode VF V IFM=17.5A 1.05 Maximum DC reverse current at rated DC blocking voltage per diode IRRM μA VRM=VRRM 5 + ~ ~ - SAM YANG GBJ35005 --- GBJ3510SAMYANG ELECTRONICS All d ata sheet.com
www.diode.co.kr ■Thermal Characteristics (Ta=25℃ Unless otherwise specified) PARAMETER SYMBOL UNIT GBJ35005 GBJ3501 GBJ3502 GBJ3504 GBJ3506 GBJ3508 GBJ3510 Thermal Resistance Between junction and ambient, Without heatsink RθJ-A ℃/W 22.0 Between junction and case, With heatsink RθJ-C 0.8 ■Ordering Information (Example) PREFERED P/N PACKING CODE UNIT WEIGHT(g) MINIIMUM PACKAGE(pcs) INNER BOX QUANTITY(pcs) OUTER CARTON QUANTITY(pcs) DELIVERY MODE GBJ35005 THRU GBJ3510 B1 A pproximate 6.5 15 750 1500 TUBE ■ Characteristics (Typical) 800 FIG1:Io-Tc Curve 16090 100 110 120 130 140 150 Tcheatsink sine wave R-load with heatsink Case Temperature(℃) Average Forward Output(A) 0.1 0.2 0.5 FIG3: Forward Voltage 1.0 5.0 Ta=25℃ Instantaneous Forward Voltage(V) Instantaneous Forward Current(A) 0 20 40 60 80 100 0.01 0.1 1.0 100 Tj=125℃ Tj=25℃ FIG4:Typical Reverse Characteristics Instantaneous Reverse Current(uA) Percent of Rated Peak Reverse Voltage(%) 2 5 10 20 50 100 150 300 450 FIG2:Surge Forward Current Capability 0 8.3ms IFSM 8.3ms half sine wave Number of Cycles Peak Forward Surge Current(A) non-repetitive Tj=25℃ 1cycle SAM YANG GBJ35005 --- GBJ3510SAMYANG ELECTRONICS All d ata sheet.com
www.diode.co.kr ■ Outline Dimensions 6KBJ Dim Min Max A 29.7 30.3 B 19.7 20.3 C 17.0 18.0 D 4.8 5.8 E 3.8 4.2 F 7.3 7.7 G 9.8 10.2 H 0.9 1.1 I 2.0 2.4 J 2.3 2.7 K 3.4 3.8 L 4.4 4.8 M 10.8 11.2 N 3.1 3.7 O 3.1 3.4 P 0.6 0.8 Dimensions in millimeters + ~ ~ - 6KBJ A B C G F J I H HOLE FOR NO.
6 SCREW
D K L M O DIA PF E N SAM YANG GBJ35005 --- GBJ3510SAMYANG ELECTRONICS All d ata sheet.com