GBJ30

GBJ30 NELLSEMI | Alldatasheet

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UL recognition file number E320098 Small volume, light weight Typical IR less than 2.0 µA TYPICAL□APPLICATIONS General purpose use in AC/DC bridge full wave Epoxy meets UL 94 V-O flammability rating PRIMARY CHARACTERRISTICS IF(AV) Weight:□6.5g□(0.23□ozs) 30A VRRM 400V□to□1200V 1.10V 5 Aµ 150ºC IFSM IR VF SEMICONDUCTOR RoHSRoHS Page□1□of□3 Glass Passivated Single-Phase Bridge Rectifier, 30A Nell High Power Products Compliant to RoHS High surge current capability Low thermal resistance Small thermal resistance rectification for big power supply, field supply for DC motor, industrial automation applications. ADVANTAGE TJ□max. 400A GBJ30 GBJ3004 Thru GBJ3012 Isolation voltage up to 2500V International standard package High heat-conduction rate Low temperature rise All□dimensions□in□millimeters www.nellsemi.com + ~ ~ 30±0.3 3.2±0.2 20±0.3 17.5±0.2 5±0.2 4±0.2 0.5±0.1 0.5±0.1 60°±5° 2.5±0.2 2.2±0.2 1±0.1 3.6±0.1 11.2±0.2 4.6±0.1 2.7±0.1 0.65±0.05 + ~ ~ High temperature soldering guaranteed : 260°C/10 second, 2.3kg tension force

Page□2□of□3 Nell High Power Products MAJOR RATINGS AND CHARACTERISTICS (T = 25°C unless otherwis e noted)A PARAMETER V V SYMBOL GBJ30 UNIT 1300 500 700 900 1200400 600 800 1000 120806 10 1100 1200400 600 800 1000 V Maximum□repetitive□peak□reverse□voltage Peak□reverse□non-repetitive□voltage Maximum□DC□blocking□voltage Maximum□average□forward□rectified□output□current,□T =□85 Cc ° Peak□forward□surge□current□single□sine-wave□superimposed□on rated□load Rating□(non-repetitive,□for□t□greater□than□1□ms□and□less□than□8.3□ms) for□fusing RMS□isolation□voltage□from□case□to□leads Operating□junction□storage□temperature□range VRRM VRSM IFSM VDC IF(AV) VISO I t2 2500 664 -40 to□150 400 A s2 A A V ºC ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise note d)A PARAMETER V µA SYMBOL GBJ30 UNIT 04 120806 10 Maximum□instantaneous□forward□drop□per□diode Maximum□reverse□DC□current□at□rated□DC□blocking VF IR 500 1.10 voltage□per□diod TEST CONDITIONS IF =□15A TA =□25 C° TA =□150 C° THERMAL AND MECHANICAC (T = 25°C unless otherwise noted)A PARAMETER °C/W SYMBOL GBJ30 UNIT 04 12 0806 10 Typical□thermal□resistance (1)□With□heatsink,□single□side□heat□dissipation,□half□sine□wave. RθJC (1) 1.0 Notes Storage temperature□range TSTG -40 to□150 ºC TJ TEST CONDITIONS junction□to□case Single-side□heat□dissipation,□sine half□wave Mounting ± 10 % to heatsink M3 A mounting compound is recommended and the torque should be rechecked after a for the spreadperiod of hours to allow3 .of the compound 0.8 Nm Approximate weight 6.5 torque g - Product type□: “GBJ” Package,1 BridgeØ1 Device□code 30 10 GBJ - 100□=Voltage□code□:□code□x VRRM I rating□: for AF(AV) "30" 30 GBJ30 www.nellsemi.com

Fig.1□Derating□curve□for□output□rectified□current Average□forward□output□current,□amperes□(A) Ambient□temperature□(°C) 0 50 100 150 Fig.2□Maximum□non-repetitive□peak□forward surge□current□per□bridge□element Average□output□current,□amperes□(A) 100 200 300 400 1 10 100 Number□of□cycle□at□50H z T =□25°CJ T =□100°CJ Fig.3□Typical□reverse□characteristics□per bridge□element Instantaneous□reverse□output□micro,□amperes□( A) μ Percent□of□rated□peak□reverse□voltage□(%) 100 1.0 0.1 0.01 0 20 40 60 80 100 120 140 Fig.4□Typical□forward□characteristics□per bridge□element 100 1.0 0.1 Instantaneous□forward□current,□amperes□(A) Forward□voltage□(v) Page□3□of□3www.nellsemi.com T =□25°CJ T =□25°CJ Single□half-sine-wave (JEDEC□method)