GBJ2005 SAMYANG | Alldatasheet

Document overview

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Technical content

Features

  • UL recognition, file #E230084
  • Thin single in-line package
  • High surge current capability
  • Solder dip 275 °C max. 7 s, per JESD 22-B106 Typical Applications General purpose use in AC/DC bridge full wave rectification for switching power supply, home appliances, office equipment, industrial automation applications. Mechanical Data
  • Package: 2KBJ Molding compound meets UL 94 V-0 flammability rating, RoHS-compliant
  • Terminals: Tin plated leads, solderable per J-STD-002 and JESD22-B102
  • Polarity: As marked on body ■ Maximum Ratings (Ta=25℃ Unless otherwise specified) PARAMETER SYMBOL UNIT GBJ2005 GBJ201 GBJ202 GBJ204 GBJ206 GBJ208 GBJ210 Device marking code GBJ2005 GBJ201 GBJ202 GBJ204 GBJ206 GBJ208 GBJ210 Repetitive peak reverse voltage VRRM V 50 100 200 400 600 800 1000 Average Rectified Output Current @60Hz sine wave, R-load, Ta =25℃ IO A 2.0 Surge(non-repetitive)forward current @60HZ half-sine wave, 1 cycle, Tj=25℃ IFSM A 90 Current squared time @1ms≤t<8.3ms Tj=25℃,rating of per diode I t A2S 33 Storage temperature Tstg ℃ -55 ~+150 Junction temperature Tj ℃ -55 ~+150 ■ Electrical Characteristics(Ta=25℃ Unless otherwise specified) PARAMETER SYMBOL UNIT TEST CONDITIONS GBJ2005 GBJ201 GBJ202 GBJ204 GBJ206 GBJ208 GBJ210 Maximum instantaneous forward voltage drop per diode VF V IFM=1.0A 1.00 Maximum DC reverse current at rated DC blocking voltage per diode IRRM μA VRM=VRRM 5 + ~ ~ - www.diode.co.kr SAM YANG GBJ2005 --- GBJ210 SAMYANG ELECTRONICS All d ata sheet.com

■Thermal Characteristics (Ta=25℃ Unless otherwise specified) PARAMETER SYMBOL UNIT GBJ2005 GBJ201 GBJ202 GBJ204 GBJ206 GBJ208 GBJ210 Thermal Resistance Between junction and ambient RθJ-A ℃/W 47.0 Between junction and case, RθJ-C 10.0 ■Ordering Information (Example) PREFERED P/N PACKAGE CODE UNIT WEIGHT(g) MINIMUM PACKAGE(pcs) INNER BOX QUANTITY(pcs) OUTER CARTON QUANTITY(pcs) DELIVERY MODE GBJ2005-GBJ210 B1 A pproximate 2.19 22 1320 5280 Tube ■ Characteristics (Typical) Instantaneous Reverse Current(μA) 0 20 40 60 80 100 0.01 0.1 100 Tj=125℃ Tj=25℃ FIG4:Typical Reverse Characteristics Percent of Rated Peak Reverse Voltage(%)

0.4 Average Forward Output Current (A)

Ambient Temperature (℃) FIG1:Io-Ta Curve 160 sine wave R-load free in air 40 80 120 0.8 1.2 1.6 2.0 2.4 on glass-epoxi substrate P.C.B. soldering land 3mmφ 2 5 10 20 50 100 Half sine wave non-repetitive Ta=25℃ FIG2:Surge Forward Current Capability Number of Cycles 0 8.3ms 1cycle IFSM 8.3ms 100 150 2:耐正向浪涌流曲 Peak Forward Surge Current (A) 0.1 0.2 0.5 Instantaneous Forward Voltage (V) Instantaneous Forward Current(A) FIG3:Instantaneous Forward Voltage 1.0 5.0 Ta=25℃ SAM YANG GBJ2005 --- GBJ210 SAMYANG ELECTRONICS www.diode.co.kr All d ata sheet.com

■ Outline Dimensions 2KBJ Dim Min Max A 19.2 21.2 B 1.2 1.8 C 1.0 1.2 D Typ:3.0 E 4.9 5.1 F 10.5 11.5 G 2.0 3.0 H 13.0 15.0 I 3.0 4.0 J 0.9 1.1 K 0.4 0.6 Dimensions in millimeters A F D I H GB E C K J E E 2KBJ www.diode.co.kr SAM YANG GBJ2005 --- GBJ210 SAMYANG ELECTRONICS All d ata sheet.com