GBJ20005 YEASHIN | Alldatasheet
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http://www.yeashin.com 1 REV.02 20120305 GBJ20005 THRU GBJ2010 20A GLASS PASSIVATED BRIDGE RECTIFIER
FEATURES
‧Glass Passivated Die Construction ‧High Case Dielectric Strength of 1500VRMS ‧Low Reverse Leakage Current ‧Surge Overload Rating to 240A Peak ‧Ideal for Printed Circuit Board Applications ‧Plastic Material - UL Flammability Classification 94V-0 ‧UL Listed Under Recognized Component Index, File Number E94661 ‧High temperature soldering : 260 O C / 10 seconds at terminals ‧Pb free product at available : 99% Sn above meet RoHS environment substance directive request MECHANICAL DATA ‧Case: Molded Plastic ‧Terminals: Plated Leads, Solderable per MIL-STD-202, Method 208 ‧Polarity: Molded on Body ‧Mounting: Through Hole for #6 Screw ‧Mounting Torque: 5.0 in-lbs Maximum ‧Weight: 6.6 grams (approx) ‧Marking: Type Number Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified GBJ Dim Min Max A 29.70 30.30 B 19.70 20.30 C 17.00 18.00 D 3.80 4.20 E 7.30 7.70 G 9.80 10.20 H 2.00 2.40 I 0.90 1.10 J 2.30 2.70 K 3.0 X 45° L 4.40 4.80 M 3.40 3.80 N 3.10 3.40 P 2.50 2.90 R 0.60 0.80 S 10.80 11.20 All Dimensions in mm Single phase, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol GBJ 20005 GBJ 2001 GBJ 2002 GBJ 2004 GBJ 2006 GBJ 2008 GBJ 2010 Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 50 100 200 400 600 800 1000 V RMS Reverse Voltage VR(RMS) 35 70 140 280 420 560 700 V Average Forward Rectified Output Current @ TC= 100℃ IO 20 A Non-Repetitive Peak Forward Surge Current, 8.3 ms single half-sine-wave superimposed on rated load (JEDEC method) IFSM 240 A Forward Voltage per element @ IF =10A VFM 1.05 V Peak Reverse Current @TC = 25℃ at Rated DC Blocking Voltage @ TC = 125℃ IR 500 μ A I2t Rating for Fusing (t < 8.3ms) (Note 1) I2t 240 A2s Typical Junction Capacitance per Element (Note 2) Cj 60 pF Typical Thermal Resistance, Junction to Case (Note 3) R_JC 0.8 ℃/W Operating and Storage Temperature Range Tj, TSTG -65 to +150 ℃ Notes: 1. Non-repetitive, for t > 1ms and < 8.3 ms. 2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC. 3. Thermal resistance from junction to case per element. Unit mounted on 300 x 300 x 1.6mm aluminum plate heat sink. B C D EEG H K J I L M N P R S A
http://www.yeashin.com 2 REV.02 20120305 GBJ20005 THRU GBJ2010 DEVICE CHARACTERISTICS 0.01 0.1 1.0 V , INSTANTANEOUS FORWARD VOLTAGE (V) Fig.2 T ypical Forward Characteristics (per element) F I , INSTANTANEOUS FOR WARD CURRENT (A) F T = 25°C j Pulse width = 300µs 100 100 1 10 100 I , PEAK FOR WARD SURGE CURRENT (A) FSM NUMBER OF CYCLES AT 60 Hz Fig. 3 Maximum Non-Repetitive Sur ge Current 150 200 Single half-sine-wave (JEDEC method) T = 25°C j 100 1 10 100 C , JUNCTION CAP ACITANCE (pF) j V , REVERSE VOLTAGE (V) Fig.4 T ypical Junction Capacitance R f = 1MHz T = 25°C j 0.1 1.0 100 1000 02 04 0 6 0 8 0 100 120 140 I , INSTANTANEOUS REVERSE CURRENT (µA) R PERCENT OF RATED PEAK REVERSE VOLTAGE (%) T = 50°C j T = 125°C j T = 100°C j T = 25°C j 25 50 75 100 125 150 I , AVERAGE RECTIFIED CURRENT (A) O T , CASE TEMPERATURE (°C) Fig. 1 Forward Current Deratin g Curve C Without heatsink With heatsink Resistive or Inductive load