GBJ10A_V01 WTE | Alldatasheet
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G l a s s P a s s i v a t e d D i e C o n s t r u c t i o n Low Forward Voltage Drop A High Current Capability G High Reliability H i g h S u r g e C u r r e n t C a p a b i l i t y B Ideal for Printed Circuit Boards C + ~ ~ - Recognized File # E157705 H J L D K E Mechanical Data P P P Case: KBJ-4, Molded Plastic Terminals: Plated Leads Solderable per M MIL-STD-202, Method 208 N P o l a r i t y : A s M a r k e d o n B o d y W e i g h t : 4 . 6 g r a m s ( a p p r o x . ) Mounting Position: Any R G Mounting Torque: 0.8 N.m Max. Lead Free: For RoHS / Lead Free Version, Add “-LF” Suffix to Part Number, See Page 4 S T Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol GBJ 10A GBJ 10B GBJ 10D GBJ 10G GBJ 10J GBJ 10K GBJ 10M Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage V RRM VRWM VR 50 100 200 400 600 800 1000 V RMS Reverse Voltage VR(RMS) 35 70 140 280 420 560 700 V Average Rectified Output Current @T C = 110°C (Note 1) IO 10 A Non-Repetitive Peak Forward Surge Current 8.3ms Single Half Sine-Wave Superimposed on Rated Load (JEDEC Method) IFSM 170 A Forward Voltage per leg @I F = 5.0A V FM 1.05 V P e a k R e v e r s e C u r r e n t @ TA = 25°C At Rated DC Blocking Voltage @T A = 125°C IRM 10 500 µA I t Rating for Fusing (t < 8.3ms) I t 120 A s Typical Junction Capacitance (Note 2) CJ 55 pF Thermal Resistance Junction to Ambient (Note 3) Thermal Resistance Junction to Case (Note 1) RǀJA RǀJC 1.9 °C/W RMS Isolation Voltage Terminals to Case, t = 1min V ISO 2500 V Operating and Storage Temperature Range T J, TSTG -55 to +150 °C Note: 1. Mounted on 100 x 100 x 1.6mm thick Al. heatsink. 3. Mounted on PCB with 12 x 12mm copper pads and measured at lead length 9.5mm from case. GBJ10A – GBJ10M 10A GLASS PASSIVATED SINGLE PHASE BRIDGE RECTIFIER WON-TOP ELECTRONICS KBJ-4 Dim Min Max A 24.7 25.3 B 14.7 15.3 C 3.0 5.0 D 17.0 18.0 E 3.3 3.7 G 3.1Ø 3.6Ø H 1.05 1.45 J 1.7 2.1 K 0.9 1.1 L 1.5 1.9 M 4.4 4.8 N 3.4 3.8 P 7.3 7.7 R 9.5 10.1 S 2.5 2.9 T 0.6 0.8 All Dimensions in mm
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GBJ10A – GBJ10M WON-TOP ELECTRONICS TC, CASE TEMPERATURE (°C) Fig. 1 Forward Current Derating Curve 15 30 45 60 75 90 105 120 135 150 I(AV), AVERAGE FORWARD RECTIFIED CURRENT (A) Resistive or Inductive Load VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics 0.1 1.0 100 IF, INSTANTANEOUS FORWARD CURRENT (A) NUMBER OF CYCLES AT 60Hz Fig. 3 Forward Surge Current Derating Curve 10 100 120 160
200 IFSM, PEAK FORWARD SURGE CURRENT (A)
PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Fig. 4 Typical Reverse Characteristics 20 40 60 80 100 120 140 0.01 0.1 1.0 100 1000IR, INSTANTANEOUS REVERSE CURRENT (µA) Single Half-Sine-Wave JEDEC Method TA = 25°C TA = 125°C PD, POWER DISSIPATION (W) Mounted on 100 x 100 x 1.6mm Al. Finned Heatsink 0 4 6 8 100 1000CJ, JUNCTION CAPACITANCE (pF) 2 12 1 10 100 TJ = 25°C f = 1MHz Pulse Width = 300µs 1% Duty Cycle TJ = 25°C TJ = 150°C I F(AV), AVERAGE FORWARD CURRENT (A) Fig. 5 Forward Power Dissipation VR, DC REVERSE VOLTAGE (V) Fig. 6 Typical Junction Capacitance Sine-Wave TJ = 150°C TA = 150°C
© W o n - T o p E l e c t r o n i c s C o . , L t d . www.wontop.com Revision: September, 2012 3 MARKING INFORMATION PACKAGING INFORMATION Tube Size L x W x H (mm) Quantity (PCS) Inner Box Size L x W x H (mm) Quantity (PCS) Carton Size L x W x H (mm) Quantity (PCS) Approx. Gross Weight (KG) 525 x 35 x 7 20 542 x 135 x 135 1,000 557 x 270 x 270 4,000 30.0 GBJ10A – GBJ10M WON-TOP ELECTRONICS Note: 1. Anti-static tube, water clear color. BULK G B J 1 0 x GBJ10x = Device Number x = A, B, D, G, J, K or M Polarity = As Marked on Body + ~ ~ -
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WON-TOP ELECTRONICS and are registered trademarks of Won- Top Electronics Co., Ltd (WTE). WTE has checked all information carefully and believes it to be correct and accurate. However, WTE cannot assume any responsibility for inaccuracies. Furthermore, this information does not give the purchaser of semiconductor devices any license under patent rights to manufacturer. WTE reserves the right to change any or all information herein without further notice. WARNING: DO NOT USE IN LIFE SUPPORT EQUIPMENT. WTE power semiconductor products are not authorized for use as critical components in life support devices or systems without the express written approval. We power your everyday. Won-Top Electronics Co., Ltd. No. 44 Yu Kang North 3rd Road, Chine Chen Dist., Kaohsiung 806, Taiwan Phone: 886-7-822-5408 or 886-7-822-5410 Fax: 886-7-822-5417 Email: sales@wontop.com Internet: http://www.wontop.com GBJ10A – GBJ10M WON-TOP ELECTRONICS
ORDERING INFORMATION
Product No. Package Type Shipping Quantity GBJ10A SIL Bridge 20 Units/Tube GBJ10B SIL Bridge 20 Units/Tube GBJ10D SIL Bridge 20 Units/Tube GBJ10G SIL Bridge 20 Units/Tube GBJ10J SIL Bridge 20 Units/Tube GBJ10K SIL Bridge 20 Units/Tube GBJ10M SIL Bridge 20 Units/Tube 1. Shipping quantity given is for minimum packing quantity only. For minimum order quantity, please consult the Sales Department. 2. To order RoHS / Lead Free version (with Lead Free finish), add “-LF” suffix to part number above. For example, GBJ10A-LF.