GB7NB60KD

STGP7NB60KD STMICROELECTRONICS | Alldatasheet

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Technical content

N-CHANNEL 7A - 600V - TO-220/TO-220FP/D2PAK SHORT CIRCUIT RATED PowerMESH™ IGBT I HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) I LOW ON-VOLTAGE DROP (V cesat) I LOW GATE CHARGE I HIGH CURRENT CAPABILITY I OFF LOSSES INCLUDE TAIL CURRENT I HIGH FREQUENCY OPERATION I SHORT CIRCUIT RATED I CO-PACKAGED WITH TURBOSWITCH™ ANTIPARALLEL DIODE

DESCRIPTION

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has de- signed an advanced family of IGBTs, the Power- MESH ™ IGBTs, with outstanding performances. The suffix “K” identifies a family optimized for high frequency motor control applications with short cir- cuit withstand capability.

APPLICATIONS

I HIGH FREQUENCY MOTOR CONTROLS I SMPS AND PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES ORDER CODES TYPE V CES VCE(sat) IC STGP7NB60KD STGP7NB60KDFP STGB7NB60KD 600 V 600 V 600 V <2 . 8 V <2 . 8 V <2 . 8V PART NUMBER MARKING PACKAGE PACKAGING STGP7NB60KD GP7NB60KD TO-220 TUBE STGB7NB60KDT4 GB7NB60KD D 2PAK TAPE & REEL STGP7NB60KDFP GP7NB60KDFP TO-220FP TUBE TO-220 TO-220FP D²PAK INTERNAL SCHEMATIC DIAGRAM

STGP7NB60KD - STGP7NB60KDFP - STGB7NB60KD ABSOLUTE MAXIMUM RATINGS (/square6 ) Pulse width limited by safe operating area THERMAL DATA ELECTRICAL CHARACTERISTICS (TCASE =2 5°C UNLESS OTHERWISE SPECIFIED) OFF ON (1) Symbol Parameter Value Unit STGP7NB60KD STGB7NB60KD STGP7NB60KDFP VCES Collector-Emitter Voltage (VGS =0 ) 600 V VECR Emitter-Collector Voltage 20 V VGE Gate-Emitter Voltage ±20 V IC Collector Current (continuous) at TC =2 5°C 14 A IC Collector Current (continuous) at TC =1 0 0°C 7A ICM (/square6 ) Collector Current (pulsed) 56 A PTOT Total Dissipation at TC =2 5°C 80 25 W Derating Factor 0.64 0.20 W/ °C VISO Insulation Withstand Voltage A.C.(t= 1 sec; Tc= 25°C) -- 2500 V Tstg Storage Temperature –55 to 150 °C Tj Max. Operating Junction Temperature 150 °C TO-220 D 2PAK TO-220FP Rthj-case Thermal Resistance Junction-case Max 1.56 5 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W Symbol Parameter Test Conditions Min. Typ. Max. Unit VBR(CES) Collector-Emitter Breakdown Voltage IC = 250 µA, VGE = 0 600 V ICES Collector cut-off (VGE =0 ) VCE = Max Rating, TC =2 5°C5 0 µ A VCE = Max Rating, TC =1 2 5°C 500 µA IGES Gate-Emitter Leakage Current (VCE =0 ) VGE = ±20V, VCE = 0 ±100 nA Symbol Parameter Test Conditions Min. Typ. Max. Unit VGE(th) Gate Threshold Voltage VCE =V GE ,IC = 250µA 57 V VCE(sat) Collector-Emitter Saturation Voltage VGE = 15V, IC =7A 2.3 2.8 V VGE = 15V, IC = 7 A, Tj= 125°C 1.9 V

STGP7NB60KD - STGP7NB60KDFP - STGB7NB60KD ELECTRICAL CHARACTERISTICS (CONTINUED) DYNAMIC SWITCHING ON SWITCHING OFF () Losses include Also the Tail (Jedec Standardization) COLLECTOR-EMITTER DIODE Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by max. junction temperature. ()Losses include Also the Tail (Jedec Standardization) Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs Forward Transconductance VCE =1 5V ,IC =7 A 3.7 S C ies C oes C res Input Capacitance Output Capacitance Reverse Transfer Capacitance V CE =2 5 V ,f =1M H z ,VGE = 0 495 pF pF pF Q g Q ge Q gc Total Gate Charge Gate-Emitter Charge Gate-Collector Charge VCE = 480V, IC =7A , VGE =1 5 V 32.7 5.9 18.3 45 nC nC nC tscw Short Circuit Withstand Time V ce=0 . 5VBR(CES) ,VGE =1 5V Tj= 125°C,R G =1 0Ω 10 µs Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) Turn-on Delay Time VCC =4 8 0V ,IC =7A R G =1 0Ω ,VGE =1 5V 15 ns tr Rise Time 6 ns (di/dt)on Eon Turn-on Current Slope Turn-on Switching Losses VCC =4 8 0V ,IC =7A ,R G =1 0Ω VGE = 15 V,Tj = 125°C 980 A/µs µJ Symbol Parameter Test Conditions Min. Typ. Max. Unit tc Cross-over Time Vcc =4 8 0V ,IC =7A , R GE =1 0Ω ,VGE =1 5V 105 ns tr(Voff) Off Voltage Rise Time 30 ns td(off) Delay Time 50 ns tf Fall Time 100 ns Eoff() Turn-off Switching Loss 140 µJ Ets Total Switching Loss 200 µJ tc Cross-over Time Vcc =4 8 0V ,IC =7A , R GE =1 0Ω ,VGE =1 5V Tj = 125°C 227 ns tr(Voff) Off Voltage Rise Time 68 ns td(off) Delay Time 52 ns tf Fall Time 150 ns Eoff() Turn-off Switching Loss 300 µJ Ets Total Switching Loss 395 µJ Symbol Parameter Test Conditions Min. Typ. Max. Unit If Ifm Forward Current Forward Current pulsed A A Vf Forward On-Voltage I f=3 . 5A If=3 . 5A ,T j=1 2 5°C 1.4 1.2 1.9 V V trr Q rr Irrm Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current If=7A, V R =3 5V , Tj =125°C, di/dt = 100 A/µs 2.7 ns nC A

STGP7NB60KD - STGP7NB60KDFP - STGB7NB60KD Transfer CharacteristicsOutput Characteristics Transconductance Gate Threshold vs TemperatureCollector-Emitter On Voltage vs Collector Current Normalized Collector-Emitter On Voltage

STGP7NB60KD - STGP7NB60KDFP - STGB7NB60KD Total Switching Losses vs Collector Current Gate Charge vs Gate-Emitter Voltage Capacitance VariationsNormalized Breakdown Voltage vs Temperature Total Switching Losses vs Gate Resistance Total Switching Losses vs Temperature

STGP7NB60KD - STGP7NB60KDFP - STGB7NB60KD Thermal Impedance for TO-220FPThermal Impedance for TO-220/D2PAK Turn-Off SOA

STGP7NB60KD - STGP7NB60KDFP - STGB7NB60KD Fig. 2:Test Circuit For Inductive Load SwitchingFig. 1:Gate Charge test Circuit

STGP7NB60KD - STGP7NB60KDFP - STGB7NB60KD DIM. mm. inch A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 L 13 14 0.511 0.551 L1 3.50 3.93 0.137 0.154 L20 16.40 0.645 L30 28.90 1.137 øP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 TO-220 MECHANICAL DATA

STGP7NB60KD - STGP7NB60KDFP - STGB7NB60KD A B D E H G F 123F2 L4L5 DIM. mm. inch A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 .0385 0.417 L5 2.9 3.6 0.114 0.141 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 TO-220FP MECHANICAL DATA

STGP7NB60KD - STGP7NB60KDFP - STGB7NB60KD DIM. mm. inch A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 D1 8 0.315 E 10 10.4 0.393 E1 8.5 0.334 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.625 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 M 2.4 3.2 0.094 0.126 R 0.4 0.015 V2 0 º 8º D 2PAK MECHANICAL DATA

STGP7NB60KD - STGP7NB60KDFP - STGB7NB60KD TAPE AND REEL SHIPMENT (suffix ”T4”)* TUBE SHIPMENT (no suffix)* D 2PAK FOOTPRINT * on sales type DIM. mm inch MIN. MAX. MIN. MAX. A 330 12.992 B 1.5 0.059 C 12.8 13.2 0.504 0.520 D 20.2 0795 G 24.4 26.4 0.960 1.039 N 100 3.937 T 30.4 1.197 BASE QTY BULK QTY 1000 1000 REEL MECHANICAL DATA DIM. mm inch MIN. MAX. MIN. MAX. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 0.933 0.956 TAPE MECHANICAL DATA

STGP7NB60KD - STGP7NB60KDFP - STGB7NB60KD Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners © 2004 STMicroelectronics - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com