GB75YF120N IRF | Alldatasheet

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VCES = 1200V IC = 75A @ TC = 67°C VCE(on) typ. = 3.4V Parameter Max. Units Absolute Maximum Ratings Parameter Min Typical Maximum Units Thermal and Mechanical Characteristics VCES Collector-to-Emitter Voltage 1200 V IC @ Tc=25°C Continuous Collector Current 100 A IC @ Tc=80°C Continuous Collector Current 67 ICM Pulsed Collector Current (Ref. Fig. C.T.5) 200 ILM Clamped Inductive Load Current 200 IF @ Tc=25°C Diode Continuous Forward Current 40 IF @ Tc=80°C Diode Continuous Forward Current 25 IFM Diode Maximum Forward Current 150 VGE Gate-to-Emitter Voltage ±20 V PD @ Tc=25°C Maximum Power Dissipation (IGBT) 480 W PD @ Tc=80°C Maximum Power Dissipation (IGBT) 270 TJ Maximum Operating Junction Temperature 150 °C TSTG Storage Temperature Range -40 to +125 VISOL Isolation Voltage AC 2500 (MIN) V RθJC (IGBT) Junction-to-Case IGBT - - 0.26 °C/W RθJC (Diode) Junction-to-Case Diode - - 1.00 RθCS (Module) Case-to-Sink, flat, greased surface - 0.05 - Mounting Torque (M5) 2.7 - 3.3 N*m Weight - 170 - g ECONO2 4PAK

  • Square RBSOA
  • HEXFRED low Qrr, low Switching Energy
  • Positive V CE(on) Temperature Coefficient
  • Copper Baseplate
  • Low Stray Inductance Design
  • Benchmark Efficiency for SMPS appreciation in particular HF welding
  • Rugged Transient Performance
  • Low EMI, Requires Less Snubbing
  • Direct Mounting to Heatsink space saving
  • PCB Solderable Terminals
  • Low Junction to Case Thermal Resistance

BV(CES) Collector-to-Emitter Breakdown Voltage 1200 - - V V GE = 0 IC = 500µA VCE(ON) Collector-to-Emitter Voltage - 3.4 4.0 V I C = 75A VGE = 15V - 3.8 4.5 I C = 100A VGE = 15V - 4.0 4.5 I C = 75A VGE = 15V TJ = 125°C - 4.53 5.1 I C = 100A VGE = 15V TJ = 125°C VGE(th) Gate Threshold Voltage 4.0 5.0 6.0 V CE = VGE IC = 250µA ∆VGE(th)/ ∆TJ Thresold Voltage temp. coefficient - -11 - mV/°C V CE = VGE IC = 1mA (25°C-125°C) ICES Zero Gate Voltage Collector Current - 7 250 µA V GE = 0 VCE = 1200V - 580 2000 V GE = 0 VCE = 1200V Tj = 125°C VFM Diode Forward Voltage Drop - 3.9 5.0 V I F = 75A - 4.43 5.8 IF = 100A - 4.37 5.4 IF = 75A Tj = 125°C - 5.02 6.4 I F = 100A Tj = 125°C IGES Gate-to-Emitter Leakage Current - - ± 200 nA V GE = ±20V Electrical Characteristics @ T J = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions QG Total Gate Charge (turn-on) - 630 - I C = 50A QGE Gate-to-Emitter Charge (turn-on) - 65 - nC V CC = 600A QGC Gate-to-Collector Charge (turn-on) - 250 - V GE = 15V EON Turn-On Switching Loss - 1505 - µJ I C = 50A V CC = 600V EOFF Turn-Off Switching Loss - 2411 - V GE = 15V RG = 4.7Ω L = 500µH ETOT Total Switching Loss - 3916 - Tj = 25°C c EON Turn-On Switching Loss - 2248 - µJ I C = 50A V CC = 600V EOFF Turn-Off Switching Loss - 3351 - V GE = 15V RG = 4.7Ω L = 500µH ETOT Total Switching Loss - 7599 - Tj = 125°C c td(on) Turn-On delay time - 169 - ns I C = 50A V CC = 600V tr Rise time - 71 - V GE = 15V RG = 4.7Ω L =500µH td(off) Turn-Off delay time - 393 - Tj = 125°C tf Fall time - 136 - RBSOA Reverse Bias Safe Operating Area FULL SQUARE Tj = 150°C IC = 150A RG =10Ω VGE = 15V to 0 SCSOA Short Circuit Safe Operating Area 10 - - µs Tj = 150°C VCC = 900V V P = 1200V RG = 10Ω VGE = 15V to 0 Irr Diode Peak Rev. Recovery Current - 1.45 2.5 A Tj = 25°C - 2.35 4.0 Tj = 125°C trr Diode Rev. Recovery Time - 0.401 0.5 µs Tj = 25°C - 0.655 0.8 µs Tj = 125°C Qrr Total Rev. Recovery Charge - 0.181 0.4 µC Tj = 25°C - 0.54 1.5 µC Tj = 125°C Switching Characteristics @ T J = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions c Energy losses include "tail" and diode reverse recovery. VCC = 600V IF = 75A dI/ dt = 10A/µs

Fig. 1 - Maximum DC Collector Current vs. Case Temperature Fig. 2 - Power Dissipation vs. Case Temperature Fig. 3 - Forward SOA TC = 25°C; TJ ≤ 150°C Fig. 4 - Reverse Bias SOA TJ = 150°C; VGE =15V 0 2 04 06 08 0 1 0 0 1 2 0 100 120 140 160 0 20 40 60 80 100 120 140 160 100 200 300 400 500 TC (°C) IC (A) TC (°C) PD (W) 10 100 1000 10000 100 1000 TC (°C) PD (W) 1 10 100 1000 10000 0.01 0.1 100 1000 VCE (V) IC (A)

Fig. 5 - Typ. IGBT Output Characteristics TJ = 25°C; tp = 500µs Fig. 7 - Typ. Diode Forward Characteristics tp = 500µs Fig. 6 - Typ. IGBT Output Characteristics TJ = 125°C; tp = 500µs 0123456 100 120 140 160 VGE = 18V VGE = 15V VGE = 12V VGE = 9V 100 120 140 160 25°C 125°C VCE (V) ICE (A) 012345678 100 120 140 160 VGE = 18V VGE = 15V VGE = 12V VGE = 9V VCE (V) ICE (A) VF (V) IF (A) Fig. 8 - Typical VCE vs. VGE TJ = 25°C 7 9 11 13 15 17 19 ICE = 75A ICE = 50A ICE = 25A VGE (V) VCE (V)

Fig. 9 - Typical VCE vs. VGE TJ = 125°C Fig. 10 - Typ. Transfer Characteristics VCE = 20V; tp = 500µs 5 6 7 8 9 10 11 12 100 150 200 250 300 TJ = 25°C TJ = 125°C 7 9 11 13 15 17 19 ICE = 75A ICE = 50A ICE = 25A VGE (V) VCE (V) VGE (V) ICE (A) Fig. 11 - Typ Zero Gate Voltage Collector Current 400 600 800 1000 1200 0.001 0.01 0.1 TJ = 125°C TJ = 25°C VCES (V) ICES (mA) Fig. 12 - Typ Threshold Voltage 0 0.2 0.4 0.6 0.8 1 2.5 3.5 4.5 5.5 TJ = 125°C TJ = 25°C IC (mA) Vgeth (V)

Fig. 13 - Typ. Energy Loss vs. IC TJ = 125°C; L=200µH; VCE= 600V RG= 5Ω; VGE= 15V 20 40 60 80 100 120 140 160 EON EOFF IC (A) Energy (mJ) Fig. 14 - Typ. Switching Time vs. IC TJ = 125°C; L=200µH; VCE= 600V RG= 5Ω; VGE= 15V 20 40 60 80 100 120 140 160 0.01 0.1 tR tdOFF tF tdON IC (A) Switching Time (µs) Fig. 15- Typical Diode IREC vs. diF/dt VCC= 600V; IF= 50A 0 20 40 60 80 100 125°C 25°C dIF/ dt (A/µs) IRR (A) Fig. 16- Typical Diode tRR vs. diF/dt VCC= 600V; IF= 50A 0 20 40 60 80 100 100 200 300 400 500 600 700 800 125°C 25°C dIF/ dt (A/µs) tRR (ns)

Fig. 17- Typical Diode QRR vs. diF/dt VCC= 600V; IF= 50A 0 20 40 60 80 100 200 400 600 800 1000 1200 1400 1600 125°C 25°C dIF/ dt (A/µs) QRR (nC) Fig. 18 - Typical Gate Charge vs. VGE ICE = 5.0A; L = 600µH QG, Total Gate Charge (nC) VGE (V) 0 100 200 300 400 500 600 700 typical value Fig 19 - Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 1E-005 0.0001 0.001 0.01 0.1 0.20 0.10 D = 0.50 0.01 0.02 0.05 SINGLE PULSE ( THERMAL RESPONSE ) t1, Rectangular Pulse Duration (sec) VGE (V) Thermal Response (ZthJC )

L Rg

80 V DUT

L L Rg VCC diode clamp / DUT DUT / DRIVER - 5V Rg VCCDUT R = VCC ICM D C Driver DUT 900V Fig 20 - Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) 1E-006 1E-005 0.0001 0.001 0.001 0.01 0.1 0.20 0.10 D = 0.50 0.01 0.02 0.05 SINGLE PULSE ( THERMAL RESPONSE ) t1, Rectangular Pulse Duration (sec) VGE (V) Thermal Response (ZthJC )

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information . 01/06 Data and specifications subject to change without notice. This product has been designed and qualified for Industrial market. Qualification Standards can be found on IR's Web site. Dimensions are shown in millimeters (inches) Econo2 4Pak Package Outline INV 600V 15A (beta sample) Made in Italy 3M01BT / 0344 1.25 1.25 48,49 21,22 46,47 23,24 5,6,7 15,16,17