GB6NB60HD

STGB6NB60HD STMICROELECTRONICS | Alldatasheet

Document overview

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Technical content

This is a preliminary information on a new product in development or undergoing evaluation. Details are subject to change without notice STGB6NB60HD N-CHANNEL 6A - 600V - D2PAK Low Drop PowerMESH™ IGBT General features LOWER CRES / CIES RATIO (NO CROSS CONDUCTION SUSCEPTIBILITY) HIGH FREQUENCY OPERATION VERY SOFT ULTRA FAST RECOVERY ANTI PARALLEL DIODE TYPICAL SHORT CIRCUIT WITHSTAND TIME 5MICROS S-family, 4micro H-family CO-PACKAGE WITH TURBOSWITCH™ ANTIPARALLEL DIODE

Description

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “H” identifies a family optimized for high frequency application.

Applications

HIGH FREQUENCY MOTOR CONTROL SMPS and PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES Order codes Internal schematic diagram Type VCES VCE(sat) (Max)@ 25°C IC @100°C STGB6NB60HD 600V < 2.7V D²PAK Sales Type Marking Package Packaging STGB6NB60HD GB6NB60HD D²PAK TAPE & REEL

1 Electrical ratings

Table 1. Absolute maximum ratings Table 2. Thermal resistance Symbol Parameter Value Unit VCES Collector-Emitter Voltage (VGS = 0) 600 V IC Collector Current (continuous) at 25°C A IC Collector Current (continuous) at 100°C A ICM Note 1 Collector Current (pulsed) A VGE Gate-Emitter Voltage ± 20 V PTOT Total Dissipation at TC = 25°C W Tj Operating Junction Temperature – 65 to 150 Tstg Storage Temperature Min. Typ. Max. Unit Rthj-case Thermal Resistance Junction-case 1.56 °C/W Rthj-amb Thermal Resistance Junction-ambient 62.5 °C/W Rthc-h Thermal Resistance case-hetsink 0.5 °C/W

2 Electrical characteristics

Electrical characteristics

(TCASE = 25 °C unless otherwise specified) Table 3. Static Table 4. Dynamic Symbol Parameter Test Conditions Min. Typ. Max. Unit VBR(CES) Collectro-Emitter Breakdown Voltage IC = 250µA, VGE = 0 600 V VCE(SAT) Collector-Emitter Saturation Voltage VGE= 15V, IC= 6A, Tj= 25°C VGE= 15V, IC= 6A, Tj= 125°C 2.1 1.6 2.7 V V VGE(th) Gate Threshold Voltage VCE= VGE, IC= 250µA V ICES Collector-Emitter Leakage Current (VGE = 0) VCE = Max Rating,Tc=25°C VCE = Max Rating, Tc=125°C 500 µA µA IGES Gate-Emitter Leakage Current (VCE = 0) VGE = ± 20V , VCE = 0 ± 100 nA gfs Forward Transconductance VCE = 25V, IC= 6A 4.5 S Symbol Parameter Test Conditions Min. Typ. Max. Unit Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 25V, f = 1MHz, VGE = 0 390 560 730 pF pF pF Qg Qge Qgc Total Gate Charge Gate-Emitter Charge Gate-Collector Charge VCE = 480V, IC = 6A, VGE = 15V, (see Figure 2) 7.9 17.6 nC nC nC ICL Turn-Off SOA Minimum Current Vclamp = 480V , Tj = 150°C RG = 10Ω, VGE= 15V A

Table 5. Switching on/off (inductive load) Table 6. Switching energy (inductive load) Table 7. Collector-emitter diode (1)Pulse width limited by max. junction temperature (2) Eon is the tun-on losses when a typical diode is used in the test circuit in figure 2 Eon include diode recovery energy. If the IGBT is offered in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the same temperature (25°C and 125°C) (3) Turn-off losses include also the tail of the collector current Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr (di/dt)on Turn-on Delay Time Current Rise Time Turn-on Current Slope VCC = 480V, IC = 6A RG= 10Ω, VGE= 15V, Tj= 125°C (see Figure 3) 160 ns ns A/µs tc tr(Voff) td(off) tf Cross-over Time Off Voltage Rise Time Turn-off Delay Time Current Fall Time Vcc =480V, IC = 6A, RGE=10Ω , VGE =15V, Tj=25°C (see Figure 3) ns ns ns tc tr(Voff) td(off) tf Cross-over Time Off Voltage Rise Time Turn-off Delay Time Current Fall Time Vcc =480V, IC = 6A, RGE=10Ω , VGE =15V, Tj=125°C (see Figure 3) 150 110 110 ns ns ns Symbol Parameter Test Conditions Min. Typ. Max. Unit Eon Note 2 Eoff Note 3 Ets Turn-on Switching Losses Turn-off Switching Losses Total Switching Losses Vcc =480V, IC = 6A, RGE=10Ω , VGE =15V, Tj=25°C (see Figure 3) 150 235 µJ µJ µJ Eon Note 2 Eoff Note 3 Ets Turn-on Switching Losses Turn-off Switching Losses Total Switching Losses Vcc =480V, IC = 6A, RGE=10Ω , VGE =15V, Tj=125°C (see Figure 3) 185 220 405 µJ µJ µJ Symbol Parameter Test Conditions Min. Typ. Max. Unit Vf Forward On-Voltage If = 6A If = 6A, Tj = 125°C 1.8 1.4 2.2 V V If Ifm Forward Current Forward Current pulsed A A trr Qrr Irrm Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current If = 6A, VR = 200V, Tj = 125°C, di/dt = 100A/µs (see Figure 4) 100 135 2.7 ns ns nC

3 Test Circuits

Figure 1. Test Circuit for Inductive Load Switching Figure 2. Gate Charge Test Circuit Figure 3. Switching Waveform Figure 4. Diode Recovery Time Waveform

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com

DIM. mm. inch MIN. TYP MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 2.49 2.69 0.098 0.106 0.03 0.23 0.001 0.009 B 0.7 0.93 0.027 0.036 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 0.315 E 10.4 0.393 8.5 0.334 G 4.88 5.28 0.192 0.208 L 15.85 0.590 0.625 1.27 1.4 0.050 0.055 1.4 1.75 0.055 0.068 M 2.4 3.2 0.094 0.126 R 0.4 0.015 D2PAK MECHANICAL DATA

5 Packaging mechanical data

• on sales type DIM. mm inch MIN. MAX. MIN. MAX. A 330 12.992 B 1.5 0.059 C 12.8 13.2 0.504 0.520 D 20.2 0795 G 24.4 26.4 0.960 1.039 N 100 3.937 T 30.4 1.197 BASE QTY BULK QTY 1000 1000 REEL MECHANICAL DATA DIM. mm inch MIN. MAX. MIN. MAX. 10.5 10.7 0.413 0.421 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 4.8 5.0 0.189 0.197 3.9 4.1 0.153 0.161 11.9 12.1 0.468 0.476 1.9 2.1 0.075 0.082 R 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 0.933 0.956 TAPE MECHANICAL DATA

6 Revision History

Revision History

Initial release.

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