GB6N65TD LUGUANG | Alldatasheet

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Technical content

650V/6A Trench Field Stop IGBT VCES = 650V , IC = 6A, VCE (sat) = 1.7V Features：

  • High ruggedness performance
  • Very tight parameter distribution
  • Positive VCE (sat) temperature coefficient
  • High efficiency for motor control
  • Excellent current sharing in parallel operation
  • RoHS compliant TO-263 Applications：
  • Home appliances
  • Motor drives
  • Fan, Pumps, Vacuum cleaner Absolute Maximum Ratings of IGBT (TJ = 25°C unless otherwise noted) Symbol Parameter Conditions Value Unit VCES Collector to Emitter V oltage 650 V VGES Continuous Gate to Emitter V oltage ±20 V IC Continuous Collector Current TC = 100℃ 12 A TC = 25℃ 6 A ICM Pulse Collector Current tp=1ms 24 A PD Maximum Power Dissipation (IGBT) TC = 25℃, TJ = 175℃ 136 W tsc Short Circuit Withstand Time VCC = 400V , VGE≤15V 10 µs Absolute Maximum Ratings of Diode (TJ = 25°C unless otherwise noted) VRRM Repetitive peak reverse voltage TC = 25℃ 650 V IF Diode Continuous Forward Current TC = 100℃ 6 A IFM Peak FWD Current Repetitive tp=1ms 24 A Electrical Characteristics of IGBT (TJ = 25°C unless otherwise noted) Static characteristics Symbol Parameter Conditions Min Typ Max Unit VGE(th) Gate-Emitter Threshold V oltage IC = 1mA, VCE = VGE , TJ = 25℃ 5.2 6.2 7.2 V VCE(sat) Collector-Emitter Saturation V oltage IC = 6A, VGE = 15V TJ = 25℃ - 1.7 - V TJ= 175℃ 2.2 ICES Collector-Emitter Leakage Current V GE = 0V , VCE = VCES, TJ = 25℃ - - 0.1 mA IGES Gate-Emitter Leakage Current V GE = ±20V VCE = 0V , TJ = 25℃ -100 - 100 nA http://www.lgesemi.com Revision:202010121-P1 mail:lge@lgesemi.com

Ciss Input capacitance VCE=30V, VGE=0V , f=1MHz - 480 - pF Coss Output capacitance - 22 - Crss Reverse transfer capacitance - 8 - Qg Total gate charge VCC=520V VGE=15V IC=6A - 19 - nC Switching Characteristics td(on) Turn-on Delay Time VCC=400V , IC=6A, VGE=±15V , L=525uH, RG=10Ω TJ = 25℃ 10 ns TJ = 175℃ 11 tr Rise Time TJ = 25℃ 8 ns TJ = 175℃ 10 td(off) Turn-off Delay Time TJ = 25℃ 79 ns TJ = 175℃ 108 tf Fall Time TJ = 25℃ 56 ns TJ = 175℃ 89 Eon Turn-on Switching Loss TJ = 25℃ 0.11 mJ TJ = 175℃ 0.16 Eoff Turn-off Switching Loss TJ = 25℃ 0.1 mJ TJ = 175℃ 0.16 RθJC Junction-To-Case (IGBT) 1.1 K/W Electrical Characteristics of Diode (TJ = 25°C unless otherwise noted) Static characteristics Symbol Parameter Conditions Min Typ Max Unit VFM Forward V oltage IF=6A,VGE=0V TJ = 25℃ 1.6 V TJ = 150℃ 1.4 Switching Characteristics IRM Peak Reverse Recovery Current IF=6A, VCC=400V , VGE=-15V， L=525uH, RG=10Ω TJ = 25℃ 10 A TJ = 175℃ 12 Qrr Reverse Recovery Charge TJ = 25℃ 306 nC TJ = 175℃ 529 trr Reverse Recovery Energy TJ = 25℃ 55 mJ TJ = 175℃ 98 RθJC Junction-To-Case (Diode) 4.0 K/W Module Characteristics TJ Maximum Junction Temperature 175 ℃ TJOP Maximum Operating Junction Temperature Range -40 +175 ℃ Tstg Storage Temperature -55 +150 ℃ http://www.lgesemi.com Revision:202010121-P2 mail:lge@lgesemi.com GB6N65TD 650V/6A Trench Field Stop IGBT

http://www.lgesemi.com Revision:202010121-P3 mail:lge@lgesemi.com GB6N65TD 650V/6A Trench Field Stop IGBT

http://www.lgesemi.com Revision:202010121-P4 mail:lge@lgesemi.com GB6N65TD 650V/6A Trench Field Stop IGBT

http://www.lgesemi.com Revision:202010121-P5 mail:lge@lgesemi.com GB6N65TD 650V/6A Trench Field Stop IGBT

Package Outline: http://www.lgesemi.com Revision:202010121-P6 mail:lge@lgesemi.com TO-263 50pcs/Tube 560×150×50 1000 570×290×180 5000 Packge Packing Box Size L×W×H(mm) Quatity(pcs/box) Carton Size L×W×H(mm) Quatity(pcs/carton) TO-263 800pcs/Reel 335×335×40 800 370×370×440 4800 GB6N65TD 650V/6A Trench Field Stop IGBT