GB488U THINKISEMI | Alldatasheet
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Technical content
/G1b5Hermetic ceramics-metal stud structure /G1b5Conform to national standard JB/T8949.2-1998 /G1b5Capacity of supporting high surge current /G1b5 Typical Application /G1b5DC motor controls Controls DC power /G1b5AC switch and thermal control Synchronous motor exditation SYMBOL CHARCTERISTIC TEST CONDITIONS TJ (/G107) VALUE UNIT Min Max IF(A V) Mean forward current 180/G65half sine wawe/G2c850HZ Single heat sink/G2c8TC=98/G107 150 300 A IF(RMS) RMS current 150 3700 A VRRM Repettive peak reverse voltage VDRM&VRRM tp=10ms VDSM&VRSM=VDRM&VRRM+200V 150 100 5000 V IRRM Repetitive peak current VRM=VRRM 150 15 mA IFSM Surge on-state current 10ms half sine wave VR=0.6VRRM 150 8.25 KA I2t I2t for fusing 68 KA2S VTO Threshold voltage 150 0.83 V rT On-state slop resistance 0.91 m /Ga1 VFM Peak on-state voltage ITM=30A,F=9.0KN 150 1.33 V Irm Reverse recovery ITM=30A/G2c8tq=1000us Di/dt=-20A/us. Vr=50V 150 70 A trr Reverse recovery time 4.0 us Qrr Recovered charge 140 uC Rth(j-h) Thermal impedance node to the shell 180 /G65sine wave, single heat sink 0.090 /G107/W FM Mounting force 85 120 N Tstq Stored temperature -40 200 /G107 Wt Weight 470 g IF(A V) 300A VRRM 100-5000V IFSM 8.25 KA I2t 64 KA2S ®GB488U/GB489UR Pb Free Plating Product GB488U/GB489UR Pb 300A Stud Type Device Series-Standard Rectifier Diodes © 2006 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com/ Page 1/4Rev.06 Stud cathode and stud anode version Turbo generator excitersupply
®GB488U/GB489UR © 2006 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com/ Page 2/4Rev.06
®GB488U/GB489UR © 2006 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com/ Page 3/4Rev.06
®GB488U/GB489UR © 2006 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com/ Page 4/4Rev.06