GB3NB60HD

STGB3NB60HD_03 STMICROELECTRONICS | Alldatasheet

Document overview

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Technical content

STGP3NB60HD - STGP3NB60HDFP STGB3NB60HD N-CHANNEL 3A - 600V - TO-220/TO-220FP/D2PAK PowerMESH™ IGBT ■ HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) ■ LOW GATE CHARGE ■ HIGH FREQUENCY OPERATION ■ HIGH CURRENT CAPABILITY ■ OFF LOSSES INCLUDE TAIL CURRENT ■ CO-PACKAGED WITH TURBOSWITCH™ ANTIPARALLEL DIODE

DESCRIPTION

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has de- signed an advanced family of IGBTs, the Power- MESH™ IGBTs, with outstanding perfomances. The suffix "H" identifies a family optimized for high frequency applications (up to 50kHz)in order to achieve very high switching performances (reduced tfall) mantaining a low voltage drop.

APPLICATIONS

■ HIGH FREQUENCY MOTOR CONTROLS ■ SMPS and PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES

ORDERING INFORMATION

TYPE V CES VCE(sat) (Max) @25°C IC (#) @100°C STGB3NB60HD STGP3NB60HD STGP3NB60HDFP 600 V 600 V 600 V < 2.8 V < 2.8 V < 2.8 V SALES TYPE MARKING PACKAGE PACKAGING STGB3NB60HDT4 GB3NB60HD D 2PAK TAPE & REEL STGP3NB60HD GP3NB60HD TO-220 TUBE STGP3NB60HDFP GP3NB60HDFP TO-220FP TUBE D 2PAK TO-220FPTO-220 INTERNAL SCHEMATIC DIAGRAM

STGP3NB60HD - STGP3NB60HDFP - STGB3NB60HD ABSOLUTE MAXIMUM RATINGS (/square6 )P u l s ew i d t hl i m i t e db ys a f eo p e r a t i n ga r e a THERMAL DATA ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF ON (1) (#) Calculated according to the iterative formula: Symbol Parameter Value Unit STGP3NB60HD STGB3NB60HD STGP3NB60HDFP V CES Collector-Emitter Voltage (VGS =0 ) 600 V VGE Gate-Emitter Voltage ± 20 V IC Collector Current (continuous) at TC = 25°C (#) 10 A IC Collector Current (continuous) at TC = 100°C (#) 6A ICM (/square6 ) Collector Current (pulsed) 24 A PTOT Total Dissipation at TC = 25°C 50 25 W Derating Factor 0.4 0.2 W/°C Tstg Storage Temperature –55 to 150 °C Tj Operating Junction Temperature TO-220/D2PAK TO-220FP Rthj-case Thermal Resistance Junction-case Max 2.5 5 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W Symbol Parameter Test Conditions Min. Typ. Max. Unit VBR(CES) Collector-Emitter Breakdown Voltage IC = 250 µA, VGE = 0 600 V ICES Collector cut-off (VGE =0 ) VCE = Max Rating, TC =2 5° C 50 µA VCE = Max Rating, TC = 125 °C 100 µA IGES Gate-Emitter Leakage Current (VCE =0 ) VGE =± 2 0 V,VCE = 0 ±100 nA Symbol Parameter Test Conditions Min. Typ. Max. Unit VGE(th) Gate Threshold Voltage VCE =V GE ,IC = 250µA 35 V VCE(sat) Collector-Emitter Saturation Voltage VGE =1 5 V ,IC =3A 2.4 2.8 V V GE =1 5 V ,IC = 3 A, Tj =125°C 1.9 V IC T C() T JMAX T C–

STGP3NB60HD - STGP3NB60HDFP - STGB3NB60HD ELECTRICAL CHARACTERISTICS (CONTINUED) DYNAMIC SWITCHING ON SWITCHING OFF Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by max. junction temperature. ()Losses include Also the Tail (Jedec Standardization) COLLECTOR-EMITTER DIODE Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs Forward Transconductance VCE =2 5V ,IC =3 A 2.4 S C ies C oes C res Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE =2 5 V ,f=1M H z ,VGE = 0 235 6.6 pF pF pF Q g Q ge Q gc Total Gate Charge Gate-Emitter Charge Gate-Collector Charge V CE = 480V, IC =3A , VGE =1 5 V 7.6 27 nC nC nC ICL Latching Current V clamp = 480 V, Tj = 125°C R G =1 0Ω 12 A Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time VCC =4 8 0V ,IC =3A R G =1 0Ω ,VGE =1 5V ns ns (di/dt)on Eon Turn-on Current Slope Turn-on Switching Losses VCC = 480 V, IC =3AR G =10Ω VGE = 15 V,Tj = 125°C 400 A/µs µJ Symbol Parameter Test Conditions Min. Typ. Max. Unit tc Cross-over Time Vcc = 480 V, IC =3 A, R GE =1 0Ω ,VGE =1 5V 76 ns tr(Voff) Off Voltage Rise Time 36 ns td(off) Delay Time 53 ns tf Fall Time 77 ns Eoff() Turn-off Switching Loss 33 µJ Ets Total Switching Loss 110 µJ tc Cross-over Time Vcc = 480 V, IC =3A , R GE =1 0Ω ,VGE =1 5V Tj = 125 °C 180 ns tr(Voff) Off Voltage Rise Time 82 ns td(off) Delay Time 58 ns tf Fall Time 110 ns Eoff(**) Turn-off Switching Loss 88 µJ Ets Total Switching Loss 165 µJ Symbol Parameter Test Conditions Min. Typ. Max. Unit If Ifm Forward Current Forward Current pulsed A A Vf Forward On-Voltage I f=3A If=3A ,T j=1 2 5° C 1.6 1.4 2.0 V V trr Q rr Irrm Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current If=3A, V R =3 5V , Tj =125°C, di/dt = 100 A/µs 2.7 ns nC A

STGP3NB60HD - STGP3NB60HDFP - STGB3NB60HD Transconductance Transfer CharacteristicsOutput Characteristics Thermal Impedance for TO-220FPThermal Impedance for TO-220/D2PAK Collector-Emitter On Voltage vs Temperature

STGP3NB60HD - STGP3NB60HDFP - STGB3NB60HD Gate Charge vs Gate-Emitter Voltage Total Switching Losses vs Gate Resistance Capacitance VariationsNormalized Breakdown Voltage vs Temperature Collector-Emitter On Voltage vs Collettor CurrentGate Threshold vs Temperature

STGP3NB60HD - STGP3NB60HDFP - STGB3NB60HD Total Switching Losses vs Temperature Emitter-collector Diode Characteristics Switching Off Safe Operating AreaTotal Switching Losses vs Collector Current

STGP3NB60HD - STGP3NB60HDFP - STGB3NB60HD Fig. 2:Test Circuit For Inductive Load SwitchingFig. 1:Gate Charge test Circuit

STGP3NB60HD - STGP3NB60HDFP - STGB3NB60HD DIM. mm. inch A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 L 13 14 0.511 0.551 L1 3.50 3.93 0.137 0.154 L20 16.40 0.645 L30 28.90 1.137 øP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 TO-220 MECHANICAL DATA

STGP3NB60HD - STGP3NB60HDFP - STGB3NB60HD A B D E H G F 123F2 L4L5 DIM. mm. inch A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 .0385 0.417 L5 2.9 3.6 0.114 0.141 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 TO-220FP MECHANICAL DATA

STGP3NB60HD - STGP3NB60HDFP - STGB3NB60HD DIM. mm. inch A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 D1 8 0.315 E 10 10.4 0.393 E1 8.5 0.334 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.625 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 M 2.4 3.2 0.094 0.126 R 0.4 0.015 V2 0º 4º D 2PAK MECHANICAL DATA

STGP3NB60HD - STGP3NB60HDFP - STGB3NB60HD TAPE AND REEL SHIPMENT (suffix ”T4”)* TUBE SHIPMENT (no suffix)* D 2PAK FOOTPRINT * on sales type DIM. mm inch MIN. MAX. MIN. MAX. A 330 12.992 B 1.5 0.059 C 12.8 13.2 0.504 0.520 D 20.2 0795 G 24.4 26.4 0.960 1.039 N 100 3.937 T 30.4 1.197 BASE QTY BULK QTY 1000 1000 REEL MECHANICAL DATA DIM. mm inch MIN. MAX. MIN. MAX. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 R 50 1.574 T 0.25 0.35 0.0098 0.0137 TAPE MECHANICAL DATA

STGP3NB60HD - STGP3NB60HDFP - STGB3NB60HD Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. © The ST logo is a registered trademark of STMicroelectronics © 2003 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. © http://www.st.com