STGB30V60DF STMICROELECTRONICS | Alldatasheet
Document overview
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- PDF pages: 22
Technical content
Features
- Maximum junction temperature: TJ = 175 °C
- Tail-less switching off
- VCE(sat) = 1.85 V (typ.) @ IC = 30 A
- Tight parameters distribution
- Safe paralleling
- Low thermal resistance
- Very fast soft recovery antiparallel diode
Applications
- Photovoltaic inverters
- Uninterruptible power supply
- Welding
- Power factor correction
- Very high frequency converters
Description
This device is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the V series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a positive V CE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. C (2, TAB) G (1) E (3) TO-247 TO-3P TAB D²PAK TAB TO-220 TAB Table 1. Device summary
1 Electrical ratings
Table 2. Absolute maximum ratings
- Pulse width limited by ma ximum junction temperature.
Table 3. Thermal data
2 Electrical characteristics
TJ = 25 °C unless otherwise specified. Table 4. Static characteristics Table 5. Dynamic characteristics
Table 6. IGBT switching characteristics (inductive load)
- Energy losses include reverse recovery of the diode.
- Turn-off losses include also the tail of the collector current.
Table 7. Diode switching characteristics (inductive load)
2.1 Electrical characteristics (curves)
Figure 2. Power dissipation vs. case Figure 3. Collector current vs. case temperature Figure 4. Output characteristics (TJ=25°C) Figure 5. Output characteristics (T J=175°C) Figure 6. VCE(sat) vs. junction temperature Figure 7. V CE(sat) vs. collector current
Figure 8. Collector current vs. switching Figure 9. Forward bias safe operating area Figure 10. Transfer characteristics Figure 11. Diode V F vs. forward current Figure 12. Normalized VGE(th) vs junction Figure 13. Normalized V(BR)CES vs. junction
80 TC=80°C
10 VCE(V)
8 VGE(V)
20 IF(A)
Figure 14. Capacitance variations Figure 15. Gate charge vs. gate-emitter voltage Figure 16. Switching losses vs. collector Figure 17. Switching losses vs. gate resistance Figure 18. Switching losses vs. junction Figure 19. Switching losses vs. collector
0.1 VCE(V)
0 Qg(nC)50 100
0 IC(A)
0 Rg(Ω)
25 TJ(°C)
150 VCE(V)
Figure 20. Switching times vs. collector current Figure 21. Switching times vs. gate resistance Figure 22. Reverse recovery current vs. diode Figure 23. Reverse recovery time vs. diode Figure 24. Reverse recovery charge vs. diode Figure 25. Reverse recovery energy vs. diode
0 IC(A)10 20
0 Rg(Ω)10 20
3 Test circuits
Figure 28. Test circuit for inductive load Figure 29. Gate charge test circuit Figure 30. Switching waveform Figure 31. Diode recovery time waveform
4 Package mechanical data
specifications, grade definitions and product status are available at: www.st.com. Table 8. D²PAK (TO-263) mechanical data
Table 9. TO-220 type A mechanical data
Figure 34. TO-220 type A drawing
Table 10. TO-247 mechanical data
Figure 35. TO-247 drawing
Table 11. TO-3P mechanical data
Figure 36. TO-3P drawing
5 Packaging mechanical data
Table 12. D²PAK (TO-263) tape and reel mechanical data
6 Revision history
Table 13. Document revision history 14-Mar-2013 1 Initial release. 08-Oct-2013 4 Updated title, features and description in cover page.