GB30RF60K

GB30RF60K IRF | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 14

Technical content

Features

• Low VCE (on) Non Punch Through IGBT Technology
• Low Diode V F
• 1 0μs Short Circuit Capability
• Square RBSOA
• HEXFRED Antiparallel Diode with Ultrasoft Reverse Recovery Characteristics
• Positive VCE (on) Temperature Coefficient
• Ceramic DBC Substrate
• Low Stray Inductance Design
• TOTALLY LEAD-FREE Benefits
• Benchmark Efficiency for Motor Control
• Rugged Transient Performance
• Low EMI, Requires Less Snubbing
• Direct Mounting to Heatsink
• PCB Solderable Terminals
• Low Junction to Case Thermal Resistance VCES = 600V IC = 27A @ TC=80°C tsc > 10μs @ TJ =150°C VCE(on) typ. = 2.04V Parameter Symbol Test Conditions Ratings Units Absolute Maximum Ratings Thermal and Mechanical Characteristics Inverter Collector-to-Emitter Voltage V CES 600 V Gate-to-Emitter Voltage V GES ±20 Collector Current IC Continuos 25°C / 80°C 50 / 27 A ICM Pulsed 25°C 100 Diode Maximum Forward Current I FM 25°C 100 Power Dissipation P D One IGBT 25°C 129 W Input Rectifier Repetitive Peak Reverse Voltage V RRM 800 V Average Output Current I F(AV) 50/60Hz sine pulse 80°C 30 A Surge Current (Non Repetitive) I FSM Rated VRRM applied, 10ms, 310 I2 t (Non Repetitive) I 2t sine pulse 525 A 2s Brake Collector-to-Emitter Voltage V CES 600 V Gate-to-Emitter Voltage V GES ±20 Collector Current I C Continuous 25°C / 80°C 30 / 20 A ICM Pulsed 25°C 60 Power Dissipation P D One IGBT 25°C 100 W Repetitive Peak Reverse Voltage V RRM 600 V Maximum Operating Junction Temperature T J 150 °C Storage Temperature Range T STG -40 to +125 Isolation Voltage V ISOL AC (1 min) 2500 V Parameter Symbol Min Typical Maximum Units Junction-to-Case Inverter IGBT Thermal Resistance - - 0.97 °C/W Junction-to-Case Inverter FRED Thermal Resistance - - 1.42 Junction-to-Case Brake DIODE Thermal Resistance RθJC - - 2.44 Junction-to-Case Brake IGBT Thermal Resistance - - 1.25 Junction-to-Case Input Rectifier Thermal Resistance - - 1.03 Case-to-Sink, flat, greased surface RθCS - 0.05 - Mounting Torque (M5) 2.7 - 3.3 N m Weight 170 g 23 24 R ECONO2 PIM Document Number: 94479 www.vishay.com

Electrical Characteristics @ T J = 25°C (unless otherwise specified) Inverter IGBT Parameter Min. Typ. Max. Units Conditions BV(CES) Collector-to-Emitter Breakdown Voltage 600 - - V V GE = 0 IC = 500μA ΔV(BR)CES/ΔTJTemp. Coefficient of Breakdown Voltage - 0.7 - V/°C V GE = 0 IC = 1mA (25°C - 125°C) VCE(ON) Collector-to-Emitter Voltage - 2.04 2.65 V I C = 30A VGE = 15V - 2.60 3.62 I C = 50A VGE = 15V - 2.31 2.80 I C = 30A VGE = 15V TJ = 125°C - 3.01 2.77 I C = 50A VGE = 15V TJ = 125°C VGE(th) Gate Threshold Voltage 3.5 - 5.5 V CE = VGE IC = 250μA ΔVGE(th)/ ΔTJ Thresold Voltage temp. coefficient - -10 - mV/°C V CE = VGE IC = 1mA (25°C-125°C) ICES Zero Gate Voltage Collector Current - - 100 μAV GE = 0 VCE = 600V - 400 - V GE = 0 VCE = 600V Tj = 125°C IGES Gate-to-Emitter Leakage Current - - ±200 nA V GE = ±20V QG Total Gate Charge (turn-on) - 105 158 I C = 30A QGE Gate-to-Emitter Charge (turn-on) - 14 21 nC V CC = 300V QGC Gate-to-Collector Charge (turn-on) - 51 76 V GE = 15V EON Turn-On Switching Loss - 491 737 μJI C = 30A V CC = 300V EOFF Turn-Off Switching Loss - 223 335 V GE = 15V RG = 22Ω L = 200μH ETOT Total Switching Loss - 714 1072 Tj = 25°C 1 EON Turn-On Switching Loss - 613 920 μJI C = 30A V CC = 300V EOFF Turn-Off Switching Loss - 417 626 V GE = 15V RG = 22Ω L = 200μH ETOT Total Switching Loss - 1030 1546 Tj = 125°C 1 td(on) Turn-On delay time - 132 198 ns I C = 30A V CC = 300V tr Rise time - 33 50 V GE = 15V RG = 22Ω L = 200μH td(off) Turn-Off delay time - 153 229 Tj = 125°C tf Fall time - 88 132 Cies Input Capacitance - 1834 2751 pF V GE = 0 Coes Output Capacitance - 459 690 V CC = 30V Cres Reverse Transfer Capacitance - 54 81 f = 1Mhz RBSOA Reverse Bias Safe Operating Area FULL SQUARE Tj = 150°C IC = 60A RG = 22Ω VGE = 15V to 0 SCSOA Short Circuit Safe Operating Area 10 - - μsI P = 220A to 310A VCC = 300V RG = 47Ω VGE = 15V to 0 Irr Diode Peak Rev. Recovery Current - 43 - A Tj = 125°C VCC = 300V IF = 30A L = 200μH VGE = 15V RG = 22Ω VFM Diode Forward Voltage Drop - 1.31 1.81 V I F = 30A - 1.52 2.40 IF = 50A - 1.25 1.68 IF = 30A Tj = 125°C - 1.47 2.14 I F = 50A Tj = 125°C Inverter Diode Document Number: 94479 www.vishay.com

Electrical Characteristics @ T J = 25°C (unless otherwise specified) Brake IGBT Parameter Min. Typ. Max. Units Conditions VFM Maximum Forward Voltage Drop - - 1.50 V I F = 30A IRM Maximum Reverse Leakage Current - - 0.2 mA Tj = 25°C V R = 800V - - 1 Tj = 150°C V R = 800V rT Forward Slope Resistance - 8.8 - m Ω Tj = 150°C VF(TO) Conduction Thresold Voltage - 0.79 - V BV(CES) Collector-to-Emitter Breakdown Voltage 600 - - V V GE = 0 IC = 500μA ΔV(BR)CES/ΔTJ Temp. Coefficient of Breakdown Voltage - 0.6 - V/°C V GE = 0 IC = 1mA (25°C - 125°C) VCE(ON) Collector-to-Emitter Voltage - 2.07 2.24 V I C = 20A VGE = 15V - 2.51 2.71 I C = 30A VGE = 15V - 2.49 2.72 I C = 20A VGE = 15V TJ = 125°C - 3.06 3.47 I C =30A VGE = 15V TJ = 125°C VGE(th) Gate Threshold Voltage 4 - 6 V CE = VGE IC = 250μA ΔVGE(th)/ ΔTJ Thresold Voltage temp. coefficient - -10 - mV/°C V CE = VGE IC = 1mA (25°C-125°C) ICES Zero Gate Voltage Collector Current - - 100 μAV GE = 0 VCE = 600V - 250 - V GE = 0 VCE = 600V Tj = 125°C IGES Gate-to-Emitter Leakage Current - - ±200 nA V GE = ±20V QG Total Gate Charge (turn-on) - 48 72 I C = 15A QGE Gate-to-Emitter Charge (turn-on) - 11 16 nC V CC = 300V QGC Gate-to-Collector Charge (turn-on) - 30 44 V GE = 15V EON Turn-On Switching Loss - 176 264 μJI C = 15A V CC = 300V EOFF Turn-Off Switching Loss - 137 207 V GE = 15V RG = 22Ω L = 200μH ETOT Total Switching Loss - 313 471 Tj = 25°C 1 EON Turn-On Switching Loss - 235 353 μJI C = 15A V CC = 300V EOFF Turn-Off Switching Loss - 276 416 V GE = 15V RG = 22Ω L = 200μH ETOT Total Switching Loss - 512 768 Tj = 125°C 1 td(on) Turn-On delay time - 87 131 ns I C = 15A V CC = 300V tr Rise time - 24 36 V GE = 15V RG = 22Ω L = 200μH td(off) Turn-Off delay time - 112 169 Tj = 125°C tf Fall time - 115 172 Cies Input Capacitance - 901 1352 pF V GE = 0 Coes Output Capacitance - 263 395 V CC = 30V Cres Reverse Transfer Capacitance - 29 44 f = 1Mhz RBSOA Reverse Bias Safe Operating Area FULL SQUARE Tj = 150°C IC = 20A RG = 22Ω VGE = 15V to 0 SCSOA Short Circuit Safe Operating Area 10 - - μsI P = 180A to 280A VCC = 300V RG = 47Ω VGE = 15V to 0 Irr Diode Peak Rev. Recovery Current - 28 - A V CC = 300V IF = 15A L = 200μH VGE = 15V to 0 RG = 22Ω VFM Diode Forward Voltage Drop - 1.61 1.71 V I F = 20A - 1.79 1.99 IF = 30A - 1.57 1.66 IF = 20A Tj = 125°C - 1.73 1.83 I F = 30A Tj = 125°C R Resistance - 5000 - Ω Tj = 25°C - 4933 - Tj = 100°C B B Value - 3375 - K Tj = 25°C / 50°C Brake Diode NTC Input Rectifier

1 Energy Losses include "tail" and diode reverse recovery

Document Number: 94479 www.vishay.com

Fig. 2 - Typ. IGBT Output Characteristics TJ = 125°C; tp = 80μs Fig. 1 - Typ. IGBT Output Characteristics TJ = 25°C; tp = 80μs Fig. 4 - Typical VCE vs. VGE TJ = 25°C Fig.5 - Typical VCE vs. VGE TJ = 125°C Fig. 3 - Typ. Transfer Characteristics VCE = 50V; tp = 10μs Fig. 6- Typ. Capacitance vs. VCE VGE= 0; f = 1MHz Inverter 012345 Vge=18V Vge=15V Vge=12V Vge=10V Vge=8V Vce (V) Ice (A) 0 2 04 06 08 0 1 0 0 100 1000 10000 Vce (V) Capacitance (pF) Cies Coes Cres 5 1 01 52 0 Ice=15A Ice=30A Ice=60A Vge (V) Vce (V) 0 3 6 9 12 15 100 200 300 400 Vge (V) Ice (A) Tj = 25°C Tj = 125°C 51 0 1 5 2 0 Ice=15A Ice=30A Ice=60A Vge (V) Vce (V) 0246 Vge=18V Vge=15V Vge=12V Vge=10V Vge=8V Vce (V) Ice (A) Document Number: 94479 www.vishay.com

Fig. 8 - Typ. Diode Forward Characteristics tp = 80μs Fig. 7 - Typical Gate Charge vs. VGE ICE = 30A Fig. 10 - Typ. Switching Time vs. IC TJ = 125°C; L=200μH; VCE= 300V,RG= 22Ω;VGE= 15V Fig. 9 - Typ. Energy Loss vs. IC TJ = 125°C; L=200μH; VCE= 300V,RG= 22Ω; VGE= 15V Fig. 12- Typ. Switching Time vs. RG TJ = 125°C; L=200μH; VCE= 300V, ICE= 30A; VGE= 15V Fig. 11 - Typ. Energy Loss vs. RG TJ = 125°C; L=200μH; VCE= 300V, ICE= 30A; VGE= 15V Inverter QG, Total Gate Charge (nC) 0 20 40 60 80 100 120 300V VGE (V) 0 0.5 1 1.5 2 Vf (V) If (A) Tj = 25°C Tj = 125°C Ic (A) Energy (mJ) 10 20 30 40 50 60 0.4 0.8 1.2 1.6 ETOT EON EOFF 0 1 02 03 04 05 0 0.01 0.1 Rg (Ω) Swiching Time (µs) tdOFF tF tdON tR 25 35 45 55 65 0.01 0.1 Ic (A) Swiching Time (µs) tdOFF tF tdON tR Rg (ΩΩΩΩΩ) Energy (mJ) 0 1 02 03 04 05 0 0.2 0.4 0.6 0.8 1.2 E (OFF) E (ON) E (TOT) Document Number: 94479 www.vishay.com

Fig. 13 - Typical Diode IRR vs. IF TJ = 125°C Fig. 14 - Typical Diode IRR vs. RG TJ = 125°C; IF = 30A Fig. 16 - Thermistor Resistance vs. Temperature Fig. 17- Typ. Diode Forward Characteristics tp = 80μs Fig. 15- Typical Diode IRR vs. diF/dt VCC= 300V; VGE= 15V; ICE= 30A; TJ = 125°C Inverter Input Rectifier Thermistor 0 1 02 03 04 05 06 07 0 If (A) Irr (A) Rg = 4.7Ω Rg = 10Ω Rg = 22Ω Rg = 33Ω Rg = 47Ω 0 1 02 03 04 05 0 Rg (Ω) Irr (A) 600 800 1000 1200 1400 dif/dt (A/µs) Irr (A) 0 20 40 60 80 100 120 140 160 180 TJ , Junction Temperature (°C) Therm istor Resistance (kΩ) 00 . 511 . 52 Forward Voltage Drop VF (V) Istantaneous Forward Current IF (A) Tj = 25°C Tj = 125°C Document Number: 94479 www.vishay.com

1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 0.01 0.1 SINGLE PULSE (THERMAL RESPONSE) 0.5 0.3 0.1 0.05 0.02 0.01 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + tc t1 , Rectangular Pulse Duration (sec) Thermal Response (ZthJC) Ri (°C/W) 0.228 0.377 0.815 τi (sec) 0.000196 0.001288 0.043359 1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 0.001 0.01 0.1 SINGLE PULSE (THERMAL RESPONSE) 0.5 0.3 0.1 0.05 0.02

0.01 Ri (°C/W)

0.2582 0.7117 τi (sec) 0.000393 0.026554 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + tc t1 , Rectangular Pulse Duration (sec) Thermal Response (ZthJC) Fig 18. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) Fig 19. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) τJ Ci= i/Ri Ci= τi/Ri TCTJ Inverter τJ Ci i/Ri Ci= τi/Ri TCTJ Document Number: 94479 www.vishay.com

Fig. 21 - Typ. IGBT Output Characteristics TJ = 125°C; tp = 80μs Fig. 20 - Typ. IGBT Output Characteristics TJ = 25°C; tp = 80μs Fig. 23 - Typical VCE vs. VGE TJ = 25°C Fig.24- Typical VCE vs. VGE TJ = 125°C Fig. 22 - Typ. Transfer Characteristics VCE = 50V; tp = 10μs Fig. 25- Typ. Capacitance vs. VCE VGE= 0; f = 1MHz Brake 4 6 8 1 01 21 4 Vge (V) Ice (A) Tj = 25°C Tj = 125°C 5 1 01 52 0 Ice=5A Ice=20A Ice=30A Vge (V) Vce (V) 0 2 04 06 08 0 1 0 0 100 1000 10000 Vce (V) Capacitance (pF) Cies Coes Cres 01234 Vge=18V Vge=15V Vge=12V Vge=10V Vge=8V Vce (V) Ice (A) 01234 Vge=18V Vge=15V Vge=12V Vge=10V Vge=8V Vce (V) Ice (A) 5 1 01 52 0 Ice=5A Ice=20A Ice=30A Vge (V) Vce (V) Document Number: 94479 www.vishay.com

Fig. 27 - Typ. Diode Forward Characteristics tp = 80μs Fig. 26 - Typical Gate Charge vs. VGE ICE = 15A Fig. 29 - Typ. Switching Time vs. IC TJ = 125°C; L=200μH; VCE= 300V,RG= 22Ω;VGE= 15V Fig. 28 - Typ. Energy Loss vs. IC TJ = 125°C; L=200μH; VCE= 300V,RG= 22Ω; VGE= 15V Fig. 31 - Typ. Switching Time vs. RG TJ = 125°C; L=200μH; VCE= 300V, ICE= 15A; VGE= 15V Fig. 30 - Typ. Energy Loss vs. RG TJ = 125°C; L=200μH; VCE= 300V, ICE= 15A; VGE= 15V Brake 0 0.5 1 1.5 2 Vf (V) If (A) Tj = 25°C Tj = 125°C Ic (A) Energy (mJ) 4 7 10 13 16 19 22 0.1 0.2 0.3 0.4 0.5 0.6 0.7 ETOT EON EOFF QG, Total Gate Charge (nC) 02 0 4 0 300V VGE (V) 0 1 02 03 04 05 0 0.01 0.1 Rg (Ω) Swiching Time (µs) tF tdON tR tdOFF 10 14 18 22 0.01 0.1 Ic (A) Swiching Time (µs) tF tdOF F tdO N tR Rg (ΩΩΩΩΩ) Energy (mJ) 0 1 02 03 04 05 0 0.1 0.2 0.3 0.4 0.5 0.6 E (OFF) E (ON) E (TOT) Document Number: 94479 www.vishay.com

Fig. 32 - Typical Diode IRR vs. IF TJ = 125°C Fig. 33- Typical Diode IRR vs. RG TJ = 125°C; IF = 15A Fig. 34- Typical Diode IRR vs. diF/dt VCC= 300V; VGE= 15V; ICE= 15A; TJ = 125°C Brake 0 5 10 15 20 25 If (A) Irr (A) Rg = 47 Ω Rg = 4.7Ω Rg = 22 Ω Rg = 33 Ω Rg = 10 Ω 0 1 02 03 04 05 0 Rg (Ω ) Irr (A) 400 500 600 700 dif/dt (A/µs) Irr (A) Document Number: 94479 www.vishay.com

Fig 35. Maximum Transient Thermal Impedance, Junction-to-Case (Brake IGBT) Fig 36. Maximum Transient Thermal Impedance, Junction-to-Case (Brake Diode) Brake 1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 0.01 0.1 SINGLE PULSE (THERMAL RESPONSE) 0.5 0.3 0.1 0.05 0.02 0.01 Ri (°C/W) 0.256 0.225 0.769 τi (sec) 0.000207 0.00051 0.023774 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + tc t1 , Rectangular Pulse Duration (sec) Thermal Response (ZthJC) τJ Ci= i/Ri Ci= τi/Ri TCTJ 1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 0.01 0.1 SINGLE PULSE (THERMAL RESPONSE) 0.5 0.3 0.1 0.05 0.02 0.01 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + tc t1 , Rectangular Pulse Duration (sec) Thermal Response (ZthJC) Ri (°C/W) 0.342 0.856 1.242 τi (sec) 0.000114 0.001417 0.035743 τJ Ci= i/Ri Ci= τi/Ri TCTJ Document Number: 94479 www.vishay.com

Fig.C.T.5 - Resistive Load Circuit RG DUT/ DRIVER VCC 5 V L diode clamp/ DUT R = VCC ICM VCC -DUT RG RG DUT/ DRIVER VCC 5 V L diode clamp/ DUT VCC -DUT RG VCC IC VGE 1mA R = VCC ICM Document Number: 94479 www.vishay.com

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Data and specifications subject to change without notice. This product has been designed and qualified for Industrial market. Qualification Standards can be found on IR's Web site. Dimensions are shown in millimeters (inches) Econo2 PIM Package Outline Econo2 PIM Part Marking Information LOT GB30RF60K Made in Italy Document Number: 94479 www.vishay.com

Document Number: 99901 www.vishay.com Revision: 12-Mar-07 1 Notice The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below. Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. International Rectifier ®, IR®, the IR logo, HEXFET®, HEXSense®, HEXDIP®, DOL®, INTERO®, and POWIRTRAIN® are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product names noted herein may be trademarks of their respective owners.