GB302N THINKISEMI | Alldatasheet

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GB302N/GB303N/GB304N/GB305N/GB306N

30 Ampere Standard Type Negative Block Rectifier Diodes for Mitsubishi Alternator

© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 1/3Rev.09T BLOCK/TO-230/BA/MR/K series /rhombus4/rhombus4/rhombus4/rhombus4/rhombus4 Low leakage /rhombus4/rhombus4/rhombus4/rhombus4/rhombus4 Low forward voltage drop /rhombus4/rhombus4/rhombus4/rhombus4/rhombus4 High current capability /rhombus4/rhombus4/rhombus4/rhombus4/rhombus4 High forward surge current capability Feature: Application: /rhombus4 Block Diode/Alternator Diode with AEC-Q101 Grade Quality /rhombus4 Stack Silicon Diffused Diode alternative /rhombus4 Special for Automotive AC Alternator rectifier application /rhombus4/rhombus4/rhombus4/rhombus4/rhombus4 Technology: Latest Glass Passivation Pellet/Cu Clip Bonding /rhombus4/rhombus4/rhombus4/rhombus4/rhombus4 Case: Vacuum soldered/sintered temperature < 260 /rhombus4/rhombus4/rhombus4/rhombus4/rhombus4 Cathode Polarity: As marked on body /rhombus4/rhombus4/rhombus4/rhombus4/rhombus4 Lead: Plated lead, solderable per MIL-STD-202E method 208C /rhombus4/rhombus4/rhombus4/rhombus4/rhombus4 Mounting: BLOCK/TO-230/BA/MR/K series package type Mechanical Data: Case Lead Suffix:"P" Positive Suffix:"N" Negative GB306P Lead Case MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

  • Ratings at 25℃ ambient temperature unless otherwise specified
  • Single Phase, half wave, 60Hz, resistive or inductive load
  • For capacitive load derate current by 20% SYMBOLS GB302N GB303N GB304N GB305N GB306N UNIT Maximum Repetitive Peak Reverse V oltage V RRM 200 300 400 500 600 V olts Maximum RMS Voltage V RMS 140 210 280 350 420 V olts Maximum DC Blocking V oltage V DC 200 300 400 500 600 V olts Maximum Average Forward Rectified Current, At T C = 105 I o Amps Peak Forward Surge Current 8.3mS single half sine wave superimposed on rated load (JEDEC method) I FSM 400 Amps Rating for fusing (t<8.3ms) I t 664 A S Maximum Instantaneous Forward V oltage Drop at 100A V F

1.10 V olts

I R 5.0 100 µA Typical Thermal Resistance R θJL 1.0 Operating and Storage Temperature Rang T T STG (-65 to +175) NOTES: 1.Enough heatsink must be considered in application. ℃/W Maximum DC Reverse Current at Rated TA=25℃ DC Blocking Voltage TA=100℃ GB305P GB304P GB303P GB302P GB306N GB305N GB304N GB303N GB302N

© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 2/3Rev.09T RATINGS AND CHARACTERISTIC CURVES GB302N thru GB306N F1G.2 MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT F1G.1 TYPICAL FORWARD CURRENT DERATING GURVE

1 Cycle

CURRENT,(A) 8.3ms Single Half Sine-Wave (JEDEC Method) Tj=Tj max AVERAGE FORWARD CURRENT, (A) AMBIENT TEMPERATURE, ()℃ 125100 150 1757550250 Single Phase Half Wave 60Hz Resistive or Inductive Load 0.375″(9.5mm) Lead Length 100 400 200 300 600 500 F1G.3 TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS INSTANTANEOUS FORWARD CURRENT, (A) INSTANTANEOUS FORWARD VOLTAGE,(V) 1000 100 1.0 0.1 T1=25℃ PULSE WIDTH=300μS 1%DUTY CYCLE 504030200 SQUARE WAVE DC AVERAGE POWER DISSIPATION (W) AVERAGE FORWARD CURRENT, (A) F1G.4 FORWARD ROWER DISSIPATION GB302N thru GB306N

BLOCK/TO-230/BA/MR/K Series Package Outline © 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 3/3Rev.09T DIM MILLIMETERS 2.0 0.3 1.9 0.3 8.5 0.3 E 10.0 0.3 13.5 0.3 24.0 0.5 10.0 0.3 5.0 0.3 2.5 0.3 5.0 0.3 4.5 0.3 9.0 0.3 1.0 0.3 4.4 0.5 0.6 0.3 DIM MILLIMETERS F G H T A1D3 EF G D1TH +_ +_ GB302N thru GB306N