GB10SLT06-CAL GENESIC | Alldatasheet
Document overview
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Technical content
Features
650 V Schottky rectifier 175 °C maximum operating temperature Temperature independent switching behavior Superior surge current capability Positive temperature coefficient of V F Extremely fast switching speeds Superior figure of merit Q C/IF Maximum Ratings at Tj = 175 °C, unless otherwise specified Parameter Symbol Conditions Values Unit Repetitive peak reverse voltage V RRM 650 V Continuous forward current I F TC = 25 °C 25 A Continuous forward current I F TC ≤ 150 °C 10 A RMS forward current I F(RMS) TC ≤ 150 °C 17 A Operating and storage temperature T j , Tstg -55 to 175 °C Electrical Characteristics at Tj = 175 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Diode forward voltage V F IF = 10 A, Tj = 25 °C 1.55 V IF = 10 A, Tj = 175 °C 2.6 Reverse current I R VR = 650 V, Tj = 25 °C 5 µA VR = 650 V, Tj = 175 °C 50 Total capacitive charge Q C IF ≤ IF,MAX dIF/dt = 200 A/μs Tj = 175 °C VR = 400 V 31 nC Switching time t s VR = 400 V < 25 ns Total capacitance C VR = 1 V, f = 1 MHz, Tj = 25 °C 490 pF VR = 400 V, f = 1 MHz, Tj = 25 °C 45 Thermal Characteristics Thermal resistance, junction - case R thJC Assuming TO-220 package 0.8 °C/W *For chip size and metallization, please refer to the mechanical datasheet (must have a non-disclosure agreement with GeneSiC Semiconductor).
Sept 2014 http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/ Page 2 of 2 Figure 1: Typical Forward Characteristics Figure 2: Typical Reverse Characteristics Figure 3: Typical Junction Capacitance vs Reverse Voltage Characteristics Figure 4: Typical Switching Energy vs Reverse Voltage Characteristics
Revision History
Date Revision Comments Supersedes 2014/09/12 1 Updated Electrical Characteristics 2013/11/06 0 Initial release Published by GeneSiC Semiconductor, Inc.
43670 Trade Center Place Suite 155
Dulles, VA 20166 GeneSiC Semiconductor, Inc. reserves right to make changes to the product specifications and data in this document without notice. GeneSiC disclaims all and any warranty and liability arising out of use or application of any product. No license, express or implied to any intellectual property rights is granted by this document. Unless otherwise expressly indicated, GeneSiC products are not designed, tested or authorized for use in life-saving, medical, aircraft navigation, communication, air traffic control and weapons systems, nor in applications where their failure may result in death, personal injury and/or property damage.
Sept 2014 http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/ Page 2 of 2 SPICE Model Parameters Copy the following code into a SPICE software program for simulation of the GB10SLT06-CAL device. * MODEL OF GeneSiC Semiconductor Inc. * $Revision: 1.0 $ * $Date: 06-NOV-2013 $ * GeneSiC Semiconductor Inc. * 43670 Trade Center Place Ste. 155 * Dulles, VA 20166 * http://www.genesicsemi.com/index.php/hit-sic/baredie * COPYRIGHT (C) 2013 GeneSiC Semiconductor Inc. * ALL RIGHTS RESERVED * These models are provided "AS IS, WHERE IS, AND WITH NO WARRANTY * OF ANY KIND EITHER EXPRESSED OR IMPLIED, INCLUDING BUT NOT LIMITED * TO ANY IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A * PARTICULAR PURPOSE." * Models accurate up to 2 times rated drain current. * Start of GB10SLT06-CAL SPICE Model .SUBCKT GB10SLT06 ANODE KATHODE D1 ANODE KATHODE GB10SLT06_SCHOTTKY D2 ANODE KATHODE GB10SLT06_PIN .MODEL GB10SLT06_SCHOTTKY D + IS 4.55E-15 RS 0.0736 + N 1 IKF 1000 + EG 1.2 XTI -2 + TRS1 0.0054347826 TRS2 2.71739E-05 + CJO 6.40E-10 VJ 0.469 + M 1.508 FC 0.5 + TT 1.00E-10 BV 650 + IBV 1.00E-03 VPK 650 + IAVE 10 TYPE SiC_Schottky + MFG GeneSiC_Semi .MODEL GB10SLT06_PIN D + IS 1.54E-22 RS 0.19 + TRS1 -0.004 N 3.941 + EG 3.23 IKF 19 + XTI 0 FC 0.5 + TT 0 BV 650 + IBV 1.00E-03 VPK 650 + IAVE 10 TYPE SiC_PiN .ENDS * End of GB10SLT06-CAL SPICE Model