GB10RF120K IRF | Alldatasheet

Document overview

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Technical content

Features

  • Low VCE (on) Non Punch Through IGBT Technology
  • Low Diode V F
  • 1 0μs Short Circuit Capability
  • Square RBSOA
  • HEXFRED Antiparallel Diode with Ultrasoft Reverse Recovery Characteristics
  • Positive VCE (on) Temperature Coefficient
  • Ceramic DBC Substrate
  • Low Stray Inductance Design
  • TOTALLY LEAD-FREE Benefits
  • Benchmark Efficiency for Motor Control
  • Rugged Transient Performance
  • Low EMI, Requires Less Snubbing
  • Direct Mounting to Heatsink
  • PCB Solderable Terminals
  • Low Junction to Case Thermal Resistance
  • UL Approved E78996 VCES = 1200V IC = 13A @ TC=80°C tsc > 10μs @ TJ =150°C VCE(on) typ. = 2.68V Parameter Symbol Test Conditions Ratings Units Absolute Maximum Ratings Parameter Symbol Min Typical Maximum Units Thermal and Mechanical Characteristics Inverter Collector-to-Emitter Voltage V CES 1200 V Gate-to-Emitter Voltage V GES ±20 Collector Current IC Continuos 25°C / 80°C 20 / 13 ICM Pulsed 25°C 40 A Diode Maximum Forward Current I FM Pulsed 25°C 40 Power Dissipation P D One IGBT 25°C 88 W Input Rectifier Repetitive Peak Reverse Voltage V RRM 1600 V Average Output Current I F(AV) 50/60Hz sine pulse 80°C 13 A Surge Current (Non Repetitive) I FSM Rated VRRM applied, 10ms, 120 I2 t (Non Repetitive) I 2t sine pulse 72 A 2s Brake Collector-to-Emitter Voltage V CES 1200 V Gate-to-Emitter Voltage V GES ±20 Collector Current I C Continuous 25°C / 80°C 20 / 13 A ICM Pulsed 25°C 40 Power Dissipation P D One IGBT 25°C 88 W Maximum Operating Junction Temperature T J 150 °C Storage Temperature Range T STG -40 to +125 Isolation Voltage V ISOL AC (1 min) 2500 V Junction-to-Case Inverter IGBT Thermal Resistance - - 1.42 °C/W Junction-to-Case Inverter FRED Thermal Resistance - - 1.97 Junction-to-Case Brake DIODE Thermal Resistance RθJC - - 1.97 Junction-to-Case Brake IGBT Thermal Resistance - - 1.42 Junction-to-Case Input Rectifier Thermal Resistance - - 1.11 Case-to-Sink, flat, greased surface RθCS - 0.05 - Mounting Torque (M5) 2.7 - 3.3 N m Weight 170 g Bulletin I27278 01/07 ECONO2 PIM 23 24 R

2 www.irf.com Bulletin I27278 11/06 BV(CES) Collector-to-Emitter Breakdown Voltage 1200 - - V V GE = 0 IC = 500μA ΔV(BR)CES/ΔTJTemp. Coefficient of Breakdown Voltage - 1.33 - V/°C V GE = 0 IC = 1mA (25°C - 125°C) VCE(ON) Collector-to-Emitter Voltage - 2.68 3.03 V I C = 10A VGE = 15V - 3.68 4.55 I C = 20A VGE = 15V - 3.19 3.61 I C = 10A VGE = 15V TJ = 125°C - 4.52 5.17 I C = 20A VGE = 15V TJ = 125°C VGE(th) Gate Threshold Voltage 4 - 6 V CE = VGE IC = 250μA ΔVGE(th)/ ΔTJ Thresold Voltage temp. coefficient - -9.7 - mV/°C V CE = VGE IC = 1mA (25°C-125°C) ICES Zero Gate Voltage Collector Current - - 100 μAV GE = 0 VCE = 1200V - 750 - V GE = 0 VCE = 1200V Tj = 125°C IGES Gate-to-Emitter Leakage Current - - ±200 nA V GE = ±20V QG Total Gate Charge (turn-on) - 48 72 I C = 10A QGE Gate-to-Emitter Charge (turn-on) - 8 15 nC V CC = 600A QGC Gate-to-Collector Charge (turn-on) - 22 33 V GE = 15V EON Turn-On Switching Loss - 0.96 1.44 mJ I C = 10A V CC = 600V EOFF Turn-Off Switching Loss - 0.46 0.70 V GE = 15V RG = 22Ω L = 1mH ETOT Total Switching Loss - 1.42 2.14 Tj = 25°C 1 EON Turn-On Switching Loss - 1.25 1.88 mJ I C = 10A V CC = 600V EOFF Turn-Off Switching Loss - 0.69 0.95 V GE = 15V RG = 22Ω L = 1mH ETOT Total Switching Loss - 1.94 2.83 Tj = 125°C 1 td(on) Turn-On delay time - 86 130 ns I C = 10A V CC = 600V tr Rise time - 21 32 V GE = 15V RG = 22Ω L = 1mH td(off) Turn-Off delay time - 118 180 Tj = 125°C tf Fall time - 274 410 Cies Input Capacitance - 750 1150 pF V GE = 0 Coes Output Capacitance - 190 290 V CC = 30V Cres Reverse Transfer Capacitance - 20 35 f = 1Mhz RBSOA Reverse Bias Safe Operating Area FULL SQUARE Tj = 125°C IC = 40A RG = 22Ω VGE = 15V to 0 SCSOA Short Circuit Safe Operating Area 10 - - μs Tj = 150°C VCC = 960V V P = 1200V RG = 22Ω VGE = 15V to 0 Irr Diode Peak Rev. Recovery Current - 22 - A Tj = 125°C VCC = 600V IF = 10A L = 1mH VGE = 15V RG = 22Ω VFM Diode Forward Voltage Drop 2.02 2.50 V I F = 10A 2.53 3.35 IF = 20A 2.13 2.63 IF = 10A Tj = 125°C 2.81 3.57 I F = 20A Tj = 125°C Electrical Characteristics @ T J = 25°C (unless otherwise specified) Inverter IGBT Parameter Min. Typ. Max. Units Conditions Inverter IGBT

www.irf.com 3 Bulletin I27278 11/06 VFM Maximum Forward Voltage Drop - - 1.12 V I F = 10A IRM Maximum Reverse Leakage Current - - 0.05 mA Tj = 25°C VR = 1600V - - 1.0 Tj = 150°C V R = 1600V rT Forward Slope Resistance - - 18.1 m Ω Tj = 150°C VF(TO) Conduction Thresold Voltage - - 0.78 V BV(CES) Collector-to-Emitter Breakdown Voltage 1200 - - V V GE = 0 IC = 500μA ΔV(BR)CES/ΔTJ Temp. Coefficient of Breakdown Voltage - 1.33 - V/°C V GE = 0 IC = 1mA (25°C - 125°C) VCE(ON) Collector-to-Emitter Voltage - 2.68 3.03 V I C = 10A VGE = 15V - 3.68 4.55 I C = 20A VGE = 15V - 3.19 3.61 I C = 10A VGE = 15V TJ = 125°C - 4.52 5.17 I C = 20A VGE = 15V TJ = 125°C VGE(th) Gate Threshold Voltage 4.0 - 6.0 V CE = VGE IC = 250μA ΔVGE(th)/ ΔTJ Thresold Voltage temp. coefficient - -9.7 - mV/°C V CE = VGE IC = 1mA (25°C-125°C) ICES Zero Gate Voltage Collector Current - - 100 μAV GE = 0 VCE = 1200V - 750 - V GE = 0 VCE = 1200V Tj = 125°C IGES Gate-to-Emitter Leakage Current - - ±200 nA V GE = ±20V QG Total Gate Charge (turn-on) - 48 72 I C = 10A QGE Gate-to-Emitter Charge (turn-on) - 8 15 nC V CC = 600A QGC Gate-to-Collector Charge (turn-on) - 22 33 V GE = 15V EON Turn-On Switching Loss - 0.96 1.44 mJ I C = 10A V CC = 600V EOFF Turn-Off Switching Loss - 0.46 0.70 V GE = 15V RG = 22Ω L = 1mH ETOT Total Switching Loss - 1.42 2.14 Tj = 25°C 1 EON Turn-On Switching Loss - 1.25 1.88 mJ I C = 10A V CC = 600V EOFF Turn-Off Switching Loss - 0.69 0.95 V GE = 15V RG = 22Ω L = 1mμH ETOT Total Switching Loss - 1.94 2.830 Tj = 125°C 1 td(on) Turn-On delay time - 86 130 ns I C =10A V CC = 600V tr Rise time - 21 32 V GE = 15V RG = 22Ω L = 1mH td(off) Turn-Off delay time - 118 180 Tj = 125°C tf Fall time - 274 410 Cies Input Capacitance - 750 1150 pF V GE = 0 Coes Output Capacitance - 190 290 V CC = 30V Cres Reverse Transfer Capacitance - 20 35 f = 1Mhz RBSOA Reverse Bias Safe Operating Area FULL SQUARE Tj = 125°C IC = 40A RG = 22Ω VGE = 15V to 0 SCSOA Short Circuit Safe Operating Area 10 - - μs Tj = 150°C VCC = 960V, V P = 1200V RG = 22Ω VGE = 15V to 0 Irr Diode Peak Rev. Recovery Current - 22 - A Tj = 125°C VCC = 600V IF = 10A L = 1mH VGE = 15V RG = 22Ω VFM Diode Forward Voltage Drop - 2.02 2.5 V I F = 10A - 2.53 3.35 IF = 20A - 2.13 2.63 IF = 10A Tj = 125°C - 2.81 3.57 I F = 20A Tj = 125°C R Resistance - 5000 - Ω Tj = 25°C - 493.3 - Tj = 100°C B B Value - 3375 - K Tj = 25°C / 50°C Electrical Characteristics @ T J = 25°C (unless otherwise specified) Brake IGBT Parameter Min. Typ. Max. Units Conditions Brake Diode Input Rectifier NTC

1 Energy Losses include "tail" and diode reverse recovery

4 www.irf.com Bulletin I27278 11/06 Inverter Fig. 1 - Typ. IGBT Output Characteristics TJ = 25°C; tp = 80μs Fig. 2 - Typ. IGBT Output Characteristics TJ = 125°C; tp = 80μs 0123456 Vge=18V Vge=15V Vge=12V Vge=10V Vge=8V Vce (V) Ice (A) 0123456 Vge=18V Vge=15V Vge=12V Vge=10V Vge=8V Vce (V) Ice (A) Fig. 3 - Typ. Transfer Characteristics VCE=50V; tp=10μs Fig. 4 - Typical VCE vs. VGE TJ = 25°C 5 1 01 52 0 Ice=5A Ice=10A Ice=20A Vge (V) Vce (V) Fig. 5 - Typical VCE vs. VGE TJ = 125°C 51 0 1 5 2 0 Ice=12.5A Ice=25A Ice=50A Vge (V) Vce (V) Fig. 6- Typ. Capacitance vs. VCE VGE= 0; f = 1MHz 0 2 04 06 08 0 1 0 0 100 1000 10000 Vce (V) Capacitance (pF) Cies Coes Cres 0 2 4 6 8 10 12 14 16 18 20 Vge (V) Ice (A) Tj = 25°C Tj = 125°C

6 www.irf.com Bulletin I27278 11/06 Fig. 14 - Typical Diode IRR vs. RG TJ = 125°C; IF = 10A Fig. 13 - Typical Diode IRR vs. IF TJ = 125°C 0 1 02 03 04 05 0 Rg (Ω) Irr (A) Inverter Fig. 15- Typical Diode IRR vs. diF/dt; VCC= 600V; VGE= 15V; ICE= 10A; TJ = 125°C 400 500 600 700 800 900 1000 dif/dt (A/µs) Irr (A) Fig. 16 - Thermistor Resistance vs. Temperature Thermistor 0 20 40 60 80 100 120 140 160 180 TJ , Junction Temperature (°C) Therm istor Resistance (kΩ) Fig. 17- Typ. Diode Forward Characteristics tp = 80μs Input Rectifier Forward Voltage Drop - V F ( V ) Instantaneous Forward Current - I F ( A ) TJ = 125°C TJ = 25°C 0 5 10 15 20 25 If (A) Irr (A) Rg=4.7Ω Rg=10Ω Rg=22Ω Rg=33Ω Rg=47Ω

www.irf.com 7 Bulletin I27278 11/06Inverter Fig 19. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) Fig 18. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) 1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 0.01 0.1 SINGLE PULSE (THERMAL RESPONSE) 0.5 0.3 0.1 0.05 0.02 0.01 Ri (°C/W) 0.5125 0.4129 1.0447 τi (sec) 0.000527 0.001438 0.027308 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + tc t1 , Rectangular Pulse Duration (sec) Thermal Response (ZthJC) τJ Ci= i/Ri Ci= τi/Ri TCTJ 1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 0.001 0.01 0.1 SINGLE PULSE (THERMAL RESPONSE) 0.5 0.3 0.1 0.05 0.02 0.01 Ri (°C/W) 0.5523 0.8679 τi (sec) 0,413 0.649 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + tc t1 , Rectangular Pulse Duration (sec) Thermal Response (ZthJC) τJ Ci i/Ri Ci= τi/Ri TCTJ

8 www.irf.com Bulletin I27278 11/06 Brake Fig. 20 - Typ. IGBT Output Characteristics TJ = 25°C; tp = 80μs Fig. 21 - Typ. IGBT Output Characteristics TJ = 125°C; tp = 80μs 0123456 Vge=18V Vge=15V Vge=12V Vge=10V Vge=8V Vce (V) Ice (A) 0123456 Vge=18V Vge=15V Vge=12V Vge=10V Vge=8V Vce (V) Ice (A) Fig. 22 - Typ. Transfer Characteristics VCE=50V; tp=10μs Fig. 23 - Typical VCE vs. VGE TJ = 25°C 5 1 01 52 0 Ice=5A Ice=10A Ice=20A Vge (V) Vce (V) Fig. 24 - Typical VCE vs. VGE TJ = 125°C 51 0 1 5 2 0 Ice=12.5A Ice=25A Ice=50A Vge (V) Vce (V) Fig. 25- Typ. Capacitance vs. VCE VGE= 0; f = 1MHz 0 2 04 06 08 0 1 0 0 100 1000 10000 Vce (V) Capacitance (pF) Cies Coes Cres 0 2 4 6 8 10 12 14 16 18 20 Vge (V) Ice (A) Tj = 25°C Tj = 125°C

www.irf.com 9 Bulletin I27278 01/07Brake Fig. 26 - Typical Gate Charge vs. VGE ICE = 10A QG, Total Gate Charge (nC) 0 1 02 03 04 05 0 600V VGE (V) Fig. 27 - Typ. Diode Forward Characteristics tp = 80μs Fig. 30 - Typ. Energy Loss vs. RG TJ = 125°C; L=1mH; VCE= 600V; ICE= 10A; VGE= 15V Fig. 31 - Typ. Switching Time vs. RG TJ = 125°C; L=1mH; VCE= 600V; ICE= 10A; VGE= 15V Fig. 29 - Typ. Switching Time vs. IC TJ = 125°C; L=1mH; VCE= 600V; RG= 22Ω; VGE= 15V Fig. 28 - Typ. Energy Loss vs. IC TJ = 125°C; L=1mH; VCE= 600V;RG= 22Ω; VGE= 15V Ic (A) Energy (mJ) 0 5 10 15 20 25 0.5 1.5 2.5 ETOT EON EOFF 00 . 511 . 522 . 533 . 54 Vf (V) If (A) Tj = 25°C Tj = 125°C 0 5 10 15 20 25 0.001 0.01 0.1 Ic (A) Swiching Time (µs) tdOFF tF tdON tR Rg (Ω) Energy (mJ) 0 1 02 03 04 05 0 0.3 0.6 0.9 1.2 1.5 1.8 ETOT EON EOFF 0 1 02 03 04 05 0 0.001 0.01 0.1 Tr Td(on) Tf Td(off) IC (A) Switching Time (µs)

10 www.irf.com Bulletin I27278 11/06 Fig. 33 - Typical Diode IRR vs. RG TJ = 125°C; IF = 10A Fig. 32 - Typical Diode IRR vs. IF TJ = 125°C 0 1 02 03 04 05 0 Rg (Ω) Irr (A) Brake Fig. 34- Typical Diode IRR vs. diF/dt; VCC= 600V; VGE= 15V; ICE= 10A; TJ = 125°C 400 500 600 700 800 900 1000 dif/dt (A/µs) Irr (A) 0 5 10 15 20 25 If (A) Irr (A) Rg=4.7Ω Rg=10Ω Rg=22Ω Rg=33Ω Rg=47Ω

www.irf.com 11 Bulletin I27278 11/06 Brake Fig. 36 - Maximum Transient Thermal Impedance, Junction-to-Case (Brake DIODE) Fig. 35 - Maximum Transient Thermal Impedance, Junction-to-Case (Brake IGBT) 1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 0.01 0.1 SINGLE PULSE (THERMAL RESPONSE) 0.5 0.3 0.1 0.05 0.02 0.01 Ri (°C/W) 0.5125 0.4129 1.0447 τi (sec) 0.000527 0.001438 0.027308 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + tc t1 , Rectangular Pulse Duration (sec) Thermal Response (ZthJC) τJ Ci= i/Ri Ci= τi/Ri TCTJ 1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 0.001 0.01 0.1 SINGLE PULSE (THERMAL RESPONSE) 0.5 0.3 0.1 0.05 0.02 0.01 Ri (°C/W) 0.5523 0.8679 τi (sec) 0,413 0.649 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + tc t1 , Rectangular Pulse Duration (sec) Thermal Response (ZthJC) τJ Ci i/Ri Ci= τi/Ri TCTJ

12 www.irf.com Bulletin I27278 11/06 Fig.C.T.5 - Resistive Load Circuit RG DUT/ DRIVER VCC 5 V L diode clamp/ DUT R = VCC ICM VCC -DUT RG RG DUT/ DRIVER VCC 5 V L diode clamp/ DUT VCC -DUT RG VCC IC VGE 1mA R = VCC ICM

www.irf.com 13 Bulletin I27278 11/06 IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information . 11/06 Data and specifications subject to change without notice. This product has been designed and qualified for Industrial market. Qualification Standards can be found on IR's Web site. Dimensions are shown in millimeters (inches) Econo2 PIM Package Outline Econo2 PIM Part Marking Information LOT GB10RF120K Made in Italy