GB10N65SY LUGUANG | Alldatasheet

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 650V10A,VCE(sat)(typ.)=1.8V@10A  TrenchandFieldStopIGBTTechnology.  Highefficiencyformotorcontrol .  Fastswitchingandshorttailcurrent.  PositiveVCE(sat) temperaturecoefficient.  10μsshortcircuitcapability Benefits  Homeappliances,motordrives .  RuggedPerformance  ExcellentCurrentSharinginParallelOperation Absolute Maxinmun RatingsThermal Characteristics Symbol Parameter Max. Units Rth j-c Thermal Resistance, Junction to case for IGBT 1.5 ℃/ W Rth j-c Thermal Resistance, Junction to case for Diode 1.8 ℃/ W Rthj-a Thermal Resistance, Junction to Ambient 50 ℃/W GB10N65SY http://www.lgesemi.com Revision:20200722-P1 mail:lge@lgesemi.com Symbol Parameter Values Unit VCES Collector-emitter voltage 650 V VGES Gate-emitter voltage ±20 V IC Continuous collector current (TC=25℃) 20 A Continuous collector current (TC=100℃) 10 A ICM Pulsed collector current,tp limited byTvjmax 40 A IF Diode continuous forward current (TC=100℃) 10 A IFM Diode maximum current,tp limited byTvjmax 40 A tsc Short circuit withstand time 10 μs Ptot Power dissipation (TC=25℃) 100 W Power dissipation (TC=100℃) 50 W Tvj Operating junction temperature range -40 to +175 ℃ Tstg Storage temperature range -55 to +150 ℃ TO-263 C G E

Electrical Characteristics of IGBT(TVJ=25℃unlessotherwisenoted) http://www.lgesemi.com Revision:20200722-P2 mail:lge@lgesemi.com Symbol Parameter Test condition Values UnitMin. Typ. Max. BVCES Collector-emitterbreakdown voltage VGE=0V,IC=250μA 650 - - V ICES Collector-emitterleakagecurrent VCE=650V,VGE=0V - - 50 μA IGES Gateleakagecurrent,forward VGE=20V,VCE=0V - - 100 nA Gateleakagecurrent,reverse VGE=-20V,VCE=0V - - -100 nA VGE(th) Gate-emitterthreshold voltage VGE=VCE,IC=250μA 5.5 5.8 6.2 V VCE(sat) Collector-emittersaturationvoltage VGE=15V,IC=10A - 1.8 - V VGE=15V,IC=10A,Tvj=175℃ - 2.1 - V Symbol Parameter Test condition Values UnitMin. Typ. Max. Cies Input capacitance VCE=30V VGE=0V f =1MHz - 670 - pF Coes Output capacitance - 37 - pF Cres Reverse transfercapacitance - 10 - pF Qg Totalgatecharge VCC=520V VGE=15V IC=10A - 28 - nCQge Gatetoemittercharge - 2.3 - Qgc Gatetocollectorcharge - 18 - Staticcharacteristics Dynamiccharacteristics 650V/10A Trehch Field Stop IGBT GB10N65SY

http://www.lgesemi.com Revision:20200722-P3 mail:lge@lgesemi.com Symbol Parameter Test condition Values UnitMin. Typ. Max. td(on) Turn-ondelaytime VCC=400V VGE=0/15V IC=10A RG=10 Inductiveload - 12 - ns tr Risetime - 11 - ns td(off) Turn-offdelaytime - 71 - ns tf Falltime - 74 - ns Eon Turn-onenergy - 0.18 - mJ Eoff Turn-offenergy - 0.17 - mJ Ets Totalswitchingenergy - 0.35 - mJ td(on) Turn-ondelaytime VCC=400V VGE=0/15V IC=10A RG=10 Inductiveload Tvj=175℃ - 11 - ns tr Risetime - 13 - ns td(off) Turn-offdelaytime - 89 - ns tf Falltime - 121 - ns Eon Turn-onenergy - 0.23 - mJ Eoff Turn-offenergy - 0.26 - mJ Ets Totalswitchingenergy - 0.49 - mJ Switchingcharacteristics 650V/10A Trehch Field Stop IGBT GB10N65SY Symbol Parameter Test condition Values UnitMin. Typ. Max. VF Diodeforwardvoltage IF=10A - 1.4 - V IF=10A,Tvj=175℃ - 1.2 - V trr Diodereverserecoverytime VR=400V IF=10A diF/dt=-750A/μs - 57 - ns Irrm Diodepeakreverserecoverycurrent - 12 - A Qrr Diodereverserecoverycharge - 411 - nC trr Diodereverserecoverytime VR=400V IF=10A diF/dt=-750A/μs Tvj=175℃ - 121 - ns Irrm Diodepeakreverserecoverycurrent - 14 - A Qrr Diodereverserecoverycharge - 740 - nC Electrical characteristics of Diode (Tvj=25℃ unlessotherwisespecified)

650V/10A Trehch Field Stop IGBT GB10N65SY http://www.lgesemi.com Revision:20200722-P4 mail:lge@lgesemi.com Typical Performance Characteristics Fig1.Typicaloutputcharacteristic( Tvj=25℃) Fig2.Typicaloutputcharacteristic( VGE=15V) Fig 3.Powerdissipation asafunctionof TC Fig 4.Collectorcurrentasafunctionofcasetemperature (VGE≥15V,Tvj≤175℃) Fig5.Typical VGE(th) asafunctionof Tvj (IC=1mA) Fig6.Typical VF asafunctionof Tvj

Typical Performance Characteristics http://www.lgesemi.com Revision:20200722-P5 mail:lge@lgesemi.com Fig7.TypicalVCEsat asafunctionofTvj Fig8.TypicalswitchingtimeasafunctionofIC Fig9.TypicalswitchingtimesasafunctionofRG Fig10.TypicalswitchingtimesasafunctionofTvj Fig11.Typicalswitchingenergylossesasa functionofIC Fig12.Typicalswitchingenergylossesasa functionofRG 650V/10A Trehch Field Stop IGBT GB10N65SY

Typical Performance Characteristics http://www.lgesemi.com Revision:20200722-P6 mail:lge@lgesemi.com Fig13.Typicalswitchingenergylossesasa functionofTvj Fig14.TypicalIF asafunctionofVF Fig15.Safeoperatingarea Fig16.TypicalGatecharge Fig17.TypicalcapacitanceasafunctionofVCE (f=1Mhz,VGE=0V) Fig18.TransientthermalimpedanceofIGBT 650V/10A Trehch Field Stop IGBT GB10N65SY

http://www.lgesemi.com Revision:20200722-P7 mail:lge@lgesemi.com 650V/10A Trehch Field Stop IGBT GB10N65SY Ref. Dimensions Millimeters Inches A 9.90 - 10.20 0.390 - 0.402 B 14.70 - 15.80 0.579 - 0.622 C 9.4 - 9.6 0.37 - 0.378 E 1.20 - 1.40 0.047 - 0.055 F 0.75 - 0.85 0.029 - 0.033 H 4.40 - 4.70 0.173 - 0.185 J 2.30 - 2.70 0.091 - 0.106 K 0.38 - 0.55 0.015 - 0.022 L 0 0.10 0.25 0 0.004 0.010 M 1.25 - 1.35 0.049 - 0.053 TO-263 50pcs/Tube 560×150×50 1000 570×290×180 5000 Packge Packing Box Size L×W×H(mm) Quatity(pcs/box) Carton Size L×W×H(mm) Quatity(pcs/carton) TO-263 800pcs/Reel 335×335×40 800 370×370×440 4800