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Technical content

Features

 High Avalanche (UIS) Capability  Enhanced Surge Current Capability  175 °C Maximum Operating Temperature  Temperature Independent Switching Behavior  Positive Temperature Coefficient Of VF  Extremely Fast Switching Speeds  Superior Figure of Merit QC/IF Advantages  Low Standby Power Losses  Improved Circuit Efficiency (Lower Overall Cost)  Low Switching Losses  Ease of Paralleling Devices without Thermal Runaway  Smaller Heat Sink Requirements  Low Reverse Recovery Current  Low Device Capacitance  Low Reverse Leakage Current at Operating Temperature Absolute Maximum Ratings Parameter Repetitive Peak Reverse Voltage Continuous Forward Current Diode Ruggedness Power Dissipation Operating and Storage Temperature

Electrical Characteristics

Thermal / Mechanical Characteristics Thermal Resistance, Junction - Case http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/ Package TO-247-2L

Applications

Overall Cost) ithout Thermal Runaway t Operating Temperature  Power Factor Correction (PFC)  Switched-Mode Power Supply (SMPS)  Solar Inverters  Wind Turbine Inverters  Motor Drives  Induction Heating  Uninterruptible Power Supply (UPS)  High Voltage Multipliers Symbol Conditions Values VRRM 1700 IF TC = 25 °C, D = 1 61 TC = 135 °C, D = 1 30 TC = 169 °C, D = 1 10 dV/dt VR = 0 ~ 960 V 100 Ptot TC = 25 °C 600 Tj , Tstg - 55 to 175 Symbol Conditions Values min. typ. VF IF = 10 A, Tj = 25 °C 1.5 IF = 10 A, Tj = 175 °C 2.3 IR VR = 1700 V, Tj = 25 °C 1 VR = 1700 V, Tj = 175 °C 8 QC IF ≤ IF,MAX dIF/dt = 200 A/μs Tj = 175 °C VR = 400 V 67 VR = 800 V 100 ts VR = 400 V < 10 VR = 800 V C VR = 1 V, f = 1 MHz, Tj = 25 °C 1095 VR = 800 V, f = 1 MHz, Tj = 25 °C 73 RthJC 0.25 VRRM IF (Tc = 13 QC case http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/ Page 1 of 6 Mode Power Supply (SMPS) Values Unit 00 V A V/µs W 55 to 175 °C Values Unit max. 1.8 V 2.7 14 µA 95 nC ns 1095 pF °C/W = 1700 V 35°C) = 30 A = 100 nC

1700 V SiC MPS™ Diode

Feb 2018 Rev1.1 http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/ IF = f(VF,Tj); tP = 300 µs Figure 1: Typical Forward Characteristics Ptot = f(Tj) Figure 3: Power Derating Curve http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/ s IR = f(VR,Tj) Figure 1: Typical Forward Characteristics Figure 2: Typical Reverse Characteristics IF = f(TC); D = tP/T, tP Power Derating Curve Figure 4: Current Derating Curves http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/ Page 2 of 6 : Typical Reverse Characteristics P= 10 µs : Current Derating Curves

Feb 2018 Rev1.1 http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/ C = f(VR); Tj = 25 °C; f = 1MHz Figure 5: Typical Junction Capacitance vs Reverse Voltage Characteristics EC = f(VR); Tj = 25 °C; f = 1MHz Figure 7: Typical Capacitive Energy vs. Reverse Voltage Characteristics http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/ ; f = 1MHz Qc = f(VR); Tj = 25 °C; f = 1MHz : Typical Junction Capacitance vs Reverse Voltage Characteristics Figure 6: Typical Capacitive Charge vs. Reverse Voltage Characteristics ; f = 1MHz Zth,jc = f(tP,D); D = t : Typical Capacitive Energy vs. Characteristics Figure 8: Transient Thermal Impedance http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/ Page 3 of 6 ; f = 1MHz : Typical Capacitive Charge vs. Characteristics ,D); D = tP/T : Transient Thermal Impedance

Feb 2018 Rev1.1 http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/ IF = f(VF, Tj) Figure 9: Forward Curve Model http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/ IF = (VF – VBI)/R Built-In Voltage (V VBI(Tj) = m*Tj + b, Differential Resistance (R RDIFF(Tj) = a*Tj2 + b*T : Forward Curve Model http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/ Page 4 of 6 )/RDIFF Voltage (VBI): + b, 03, b = 0.915 Differential Resistance (RDIFF): + b*Tj + c (Ω);

Feb 2018 Rev1.1 http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/ Package Dimensions: TO-247-2L Recommended Solder Pad Layout NOTE 1. CONTROLLED DIMENSION IS INCH. DIMENSION IN BRACKET IS MILLIMETER. 2. DIMENSIONS DO NOT INCLUDE END FLASH, MOLD FLASH, MATERIAL PROTRUSIONS http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/ PACKAGE OUTLINE DIMENSION IN BRACKET IS MILLIMETER. FLASH, MOLD FLASH, MATERIAL PROTRUSIONS http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/ Page 5 of 6

Copyright © 2018 GeneSiC Semiconductor Inc. All Rights Reserved The information in this document is subject to change without notice Feb 2018 Rev1.1 http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/ RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your GeneSiC representative. REACH Compliance REACH substances of high concern (SVHCs) information is available for this product. Since the European Chemi (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future, GeneSiC representative to insure you get the most up information (REACH Article 67) is also available upon request. This product has not been designed or tested for use in, and is not intended for use in, applicati human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control systems. GeneSiC disclaims all and any warranty and liability arising out of use or application of any product. No lic implied to any intellectual property rights is granted by this document. Related Links  Soldering Document: http://www.genesicsemi.com/quality/quality  Tin-whisker Report: http://www.genesicsemi.com/quality/compliance/  Reliability Report: http://www.genesicsemi.com/quality/reliability/ Copyright © 2018 GeneSiC Semiconductor Inc. All Rights Reserved The information in this document is subject to change without notice 43670 Trade Center Place http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/ The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your substances of high concern (SVHCs) information is available for this product. Since the European Chemi (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future, entative to insure you get the most up-to-date REACH SVHC Declaration. REAC Article 67) is also available upon request. This product has not been designed or tested for use in, and is not intended for use in, applicati human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardia defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air GeneSiC disclaims all and any warranty and liability arising out of use or application of any product. No lic intellectual property rights is granted by this document. http://www.genesicsemi.com/quality/quality-manual/ http://www.genesicsemi.com/quality/compliance/ http://www.genesicsemi.com/quality/reliability/ Published by GeneSiC Semiconductor, Inc.

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The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future, please contact a SVHC Declaration. REACH banned substance This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air GeneSiC disclaims all and any warranty and liability arising out of use or application of any product. No license, express or

Feb 2018 Rev1.1 http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/ SPICE Model Parameters This is a secure document. Please copy this code from the SPICE (http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/GB10MPS17 into LTSPICE (version 4) software for simulation of the GB10 * GeneSiC Semiconductor SiC MPS * Revision: 1.1 * Date: February-2018 L_anode A AD 6 D1 AD Case G L_cathode K Case 6 .ends D1 ANODE KATHODE GB10MPS17_SCHOTTKY .MODEL GB10MPS17_SCHOTTKY D + IS 8.72E- 15 + N 1 + EG 1.2 + TRS1 0.005434 + CJO 1.1E-9 + M 0.438 + TT 1.00E-10 + IBV 1E-06 + IAVE 10 + MFG GeneSiC_Semi .ENDS * End of GB10MPS17-247 SPICE Model * EITHER EXPRESSED OR IMPLIED, INCLUDING BUT NOT LIMITED TO ANY IMPLIED * WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE." http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/ This is a secure document. Please copy this code from the SPICE model PDF file on our website http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/GB10MPS17 tware for simulation of the GB10MPS17-247. GeneSiC Semiconductor SiC MPSTM Rectifier L_anode A AD 6.5n D1 AD Case GB10MPS17 L_cathode K Case 6.5n _SCHOTTKY _SCHOTTKY D 15 RS 0.062 IKF 500 XTI 2 TRS2 2.717E-05 VJ 0.879 FC 0.5 BV 1700 VPK 1700 TYPE SiC_MPSTM SPICE Model * EITHER EXPRESSED OR IMPLIED, INCLUDING BUT NOT LIMITED TO ANY IMPLIED * WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE." http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/ Page 1 of 1 model PDF file on our website http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/GB10MPS17-247_SPICE.pdf) * EITHER EXPRESSED OR IMPLIED, INCLUDING BUT NOT LIMITED TO ANY IMPLIED * WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE."