GB10B60KD

IRGB10B60KD IRF | Alldatasheet

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Features

• Low VCE (on) Non Punch Through IGBT Technology.  Low Diode VF.  10µs Short Circuit Capability.  Square RBSOA.  Ultrasoft Diode Reverse Recovery Characteristics.  Positive VCE (on) Temperature Coefficient. Benefits www.irf.com 1  Benchmark Efficiency for Motor Control.  Rugged Transient Performance.  Low EMI.  Excellent Current Sharing in Parallel Operation. Absolute Maximum Ratings /G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32 Parameter Max. Units VCES Collector-to-Emitter Voltage 600 V IC @ TC = 25°C Continuous Collector Current 22 IC @ TC = 100°C Continuous Collector Current 12 ICM Pulsed Collector Current 44 ILM Clamped Inductive Load Current /G132 44 A IF @ TC = 25°C Diode Continuous Forward Current 22 IF @ TC = 100°C Diode Continuous Forward Current 10 IFM Diode Maximum Forward Current 44 VGE Gate-to-Emitter Voltage ± 20 V PD @ TC = 25°C Maximum Power Dissipation 156 PD @ TC = 100°C Maximum Power Dissipation 62 TJ Operating Junction and -55 to +150 TSTG Storage Temperature Range °C Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) /G87 Thermal Resistance /G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32 Parameter Min. Typ. Max. Units RθJC Junction-to-Case - IGBT ––– ––– 0.8 RθJC Junction-to-Case - Diode ––– ––– 3.4 RθCS Case-to-Sink, flat, greased surface ––– 0.50 ––– °C/W RθJA Junction-to-Ambient, typical socket mount/G129––– ––– 62 RθJA Junction-to-Ambient (PCB Mount, steady state)/G130––– ––– 40 IRGB10B60KD IRGS10B60KD IRGSL10B60KD E G n-channel C VCES = 600V IC = 12A, TC=100°C tsc > 10µs, TJ=150°C VCE(on) typ. = 1.8V D2Pak IRGS10B60KD TO-220AB IRGB10B60KD TO-262 IRGSL10B60KD /G80/G68/G32/G45/G32/G57/G52/G51/G56/G50/G68

2 www.irf.com Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltage 600 ––– ––– V V GE = 0V, IC = 500µA ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage ––– 0.3 ––– V/°C V GE = 0V, IC = 1.0mA, (25°C-150°C) VCE(on) Collector-to-Emitter Saturation Voltage 1.5 1.80 2.20 I C = 10A, VGE = 15V ––– 2.20 2.50 V I C = 10A, VGE = 15V TJ = 150°C VGE(th) Gate Threshold Voltage 3.5 4.5 5.5 V V CE = VGE, IC = 250µA ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage ––– -10 ––– mV/°C V CE = VGE, IC = 1.0mA, (25°C-150°C) gfe Forward Transconductance ––– 7.0 ––– S V CE = 50V, IC = 10A, PW=80µs ICES Zero Gate Voltage Collector Current ––– 3.0 150 µA V GE = 0V, VCE = 600V ––– 300 700 V GE = 0V, VCE = 600V, TJ = 150°C VFM Diode Forward Voltage Drop ––– 1.30 1.45 I C = 10A ––– 1.30 1.45 V I C = 10A TJ = 150°C IGES Gate-to-Emitter Leakage Current ––– ––– ±100 nA V GE = ±20V Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Ref.Fig. 5, 6,7 9,10,11 9,10,11 Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge (turn-on) ––– 38 ––– I C = 10A Qge Gate - Emitter Charge (turn-on) ––– 4.3 ––– nC V CC = 400V Qgc Gate - Collector Charge (turn-on) ––– 16.3 ––– V GE = 15V Eon Turn-On Switching Loss ––– 140 247 µJ I C = 10A, VCC = 400V Eoff Turn-Off Switching Loss ––– 250 360 V GE = 15V,RG = 47Ω, L = 200µH Etot Total Switching Loss ––– 390 607 Ls = 150nH T J = 25°C/G32/G131 td(on) Turn-On Delay Time ––– 30 39 I C = 10A, VCC = 400V tr Rise Time ––– 20 29 V GE = 15V, RG = 47Ω, L = 200µH td(off) Turn-Off Delay Time ––– 230 262 ns Ls = 150nH, T J = 25°C tf Fall Time ––– 23 32 Eon Turn-On Switching Loss ––– 230 340 I C = 10A, VCC = 400V Eoff Turn-Off Switching Loss ––– 350 464 µJ V GE = 15V,RG = 47Ω, L = 200µH Etot Total Switching Loss ––– 580 804 Ls = 150nH T J = 150°C /G131 td(on) Turn-On Delay Time ––– 30 39 I C = 10A, VCC = 400V tr Rise Time ––– 20 28 V GE = 15V, RG = 47Ω, L = 200µH td(off) Turn-Off Delay Time ––– 250 274 ns Ls = 150nH, T J = 150°C tf Fall Time ––– 26 34 Cies Input Capacitance ––– 620 ––– V GE = 0V Coes Output Capacitance ––– 62 ––– pF V CC = 30V Cres Reverse Transfer Capacitance ––– 22 ––– f = 1.0MHz TJ = 150°C, IC = 44A, Vp =600V VCC = 500V, VGE = +15V to 0V, µs T J = 150°C, Vp =600V,RG = 47Ω VCC = 360V, VGE = +15V to 0V Erec Reverse Recovery energy of the diode ––– 245 330 µJ T J = 150°C trr Diode Reverse Recovery time ––– 90 105 ns V CC = 400V, IF = 10A, L = 200µH Irr Diode Peak Reverse Recovery Current ––– 19 22 A V GE = 15V,RG = 47Ω, Ls = 150nH Switching Characteristics @ TJ = 25°C (unless otherwise specified) RBSOA Reverse Bias Safe Operting Area FULL SQUARE SCSOA Short Circuit Safe Operting Area 10 ––– ––– Ref.Fig. CT1 CT4 CT4 13,15 WF1WF2 CT2 CT3 WF4 17,18,19 20, 21 CT4,WF3 CT4 RG = 47Ω 14, 16 CT4 WF1 WF2 Note /G129/G32to/G32/G132/G32are on page 15

www.irf.com 3 Fig. 1 - Maximum DC Collector Current vs. Case Temperature Fig. 2 - Power Dissipation vs. Case Temperature Fig. 3 - Forward SOA TC = 25°C; TJ ≤ 150°C Fig. 4 - Reverse Bias SOA TJ = 150°C; VGE =15V 0 20 40 60 80 100 120 140 160 TC (°C) 100 120 140 160 180 Ptot (W 10 100 1000 VCE (V) 100 IC A) 1 10 100 1000 10000 VCE (V) 0.1 100 IC (A) 10 µs 100 µs 1ms DC 20 µs 0 20 40 60 80 100 120 140 160 TC (°C) IC (A)

4 www.irf.com Fig. 6 - Typ. IGBT Output Characteristics TJ = 25°C; tp = 80µs Fig. 5 - Typ. IGBT Output Characteristics TJ = -40°C; tp = 80µs Fig. 8 - Typ. Diode Forward Characteristics tp = 80µs Fig. 7 - Typ. IGBT Output Characteristics TJ = 150°C; tp = 80µs 0123456 VCE (V) ICE (A) VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 0123456 VCE (V) ICE (A) VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V VF (V) IF (A) -40°C 25°C 150°C 0123456 VCE (V) ICE (A) VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V

www.irf.com 5 Fig. 10 - Typical VCE vs. VGE TJ = 25°C Fig. 9 - Typical VCE vs. VGE TJ = -40°C Fig. 11 - Typical VCE vs. VGE TJ = 150°C Fig. 12 - Typ. Transfer Characteristics VCE = 50V; tp = 10µs 5 1 01 52 0 VGE (V) VCE (V) ICE = 5.0A ICE = 10A ICE = 15A 51 0 1 5 2 0 VGE (V) VCE (V) ICE = 5.0A ICE = 10A ICE = 15A 0 5 10 15 20 VGE (V) ICE (A) TJ = 25°C TJ = 150°C TJ = 150°C TJ = 25°C 51 0 1 5 2 0 VGE (V) VCE (V) ICE = 5.0A ICE = 10A ICE = 15A

6 www.irf.com Fig. 14 - Typ. Switching Time vs. IC TJ = 150°C; L=200µH; VCE= 400V RG= 47Ω; VGE= 15V Fig. 13 - Typ. Energy Loss vs. IC TJ = 150°C; L=200µH; VCE= 400V RG= 47Ω; VGE= 15V Fig. 16 - Typ. Switching Time vs. RG TJ = 150°C; L=200µH; VCE= 400V ICE= 10A; VGE= 15V Fig. 15 - Typ. Energy Loss vs. RG TJ = 150°C; L=200µH; VCE= 400V ICE= 10A; VGE= 15V 0 50 100 150 RG (Ω) 100 150 200 250 300 350 400 450 500 Energy (µJ) EON EOFF 0 5 10 15 20 25 IC (A) 100 200 300 400 500 600 700 800 Energy (µJ) EOFF EON 0 5 10 15 20 25 IC (A) 100 1000 Swiching Tim e (ns) tR tdOFF tF tdON 0 50 100 150 RG (Ω) 100 1000 Swiching Tim e (ns) tR tdOFF tF tdON

www.irf.com 7 Fig. 17 - Typical Diode IRR vs. IF TJ = 150°C Fig. 18 - Typical Diode IRR vs. RG TJ = 150°C; IF = 10A Fig. 20 - Typical Diode QRR VCC= 400V; VGE= 15V;TJ = 150°C Fig. 19- Typical Diode IRR vs. diF/dt VCC= 400V; VGE= 15V; ICE= 10A; TJ = 150°C 0 50 100 150 RG (Ω) IRR (A) 0 500 1000 1500 diF /dt (A/µs) IRR (A) 0 500 1000 1500 diF /dt (A/µs) 400 500 600 700 800 900 1000 1100 1200 Q RR (µC) 22Ω 47Ω 100 Ω 10Ω 20A 10A 5.0A 0 5 10 15 20 25 IF (A) IRR (A) RG = 10 Ω RG =22 Ω RG =47 Ω RG =100 Ω

8 www.irf.com Fig. 21 - Typical Diode ERR vs. IF TJ = 150°C Fig. 23 - Typical Gate Charge vs. VGE ICE = 10A; L = 600µH Fig. 22- Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz 0 5 10 15 20 25 IF (A) 100 150 200 250 300 350 400 450 Energy (µJ) 22 Ω 10Ω 47 Ω 100 Ω 0 1 02 03 04 0 Q G, Total Gate Charge (nC) VGE (V) 300V 400V 1 10 100 VCE (V) 100 1000 Capacitance (pF) Cies Coes Cres

www.irf.com 9 Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) Fig 24. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) 1E-6 1E-5 1E-4 1E-3 1E-2 1E-1 1E+0 t1 , Rectangular Pulse Duration (sec) 0.001 0.01 0.1 Therm al Response ( Z thJC ) 0.20 0.10 D = 0.50 0.02 0.01 0.05 SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 1E-6 1E-5 1E-4 1E-3 1E-2 1E-1 1E+0 t1 , Rectangular Pulse Duration (sec) 0.001 0.01 0.1 Therm al Response ( Z thJC ) 0.20 0.10 D = 0.50 0.02 0.01 0.05 SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc Ri (°C/W) τi (sec) 0.285 0.000134 0.241 0.000565 0.288 0.0083 τJ τJ τ τC Ci= i/Ri Ci= τi/Ri Ri (°C/W) τi (sec) 0.846 0.000149 1.830 0.001575 1.143 0.027005 τJ τJ τ τC Ci= i/Ri Ci= τi/Ri

10 www.irf.com VCC DUT L Fig.C.T.5 - Resistive Load Circuit L Rg VCC diode clamp / DUT DUT / DRIVER - 5V Rg VCCDUT R = VCC ICM L Rg

80 V DUT

www.irf.com 11 -100 100 200 300 400 500 600 time(µs) VCE (V) ICE (A) 90% ICE 5% VCE 5% ICE Eoff Loss tf -100 100 200 300 400 500 600 15.90 16.00 16.10 16.20 time (µs) VCE (V) ICE (A) TEST CURRENT 90% test current 5% VCE 10% test current tr Eon Loss -600 -500 -400 -300 -200 -100 100 time (µS) VF (V) -20 -15 -10 IF (A) Peak IRR tRR QRR 10% Peak IRR 100 150 200 250 300 350 400 time (µS) VCE (V) 100 ICE (A) VCE ICE Fig. WF3- Typ. Diode Recovery Waveform @ TJ = 150°C using Fig. CT.4 Fig. WF4- Typ. S.C Waveform @ TJ = 150°C using Fig. CT.3 Fig. WF1- Typ. Turn-off Loss Waveform @ TJ = 150°C using Fig. CT.4 Fig. WF2- Typ. Turn-on Loss Waveform @ TJ = 150°C using Fig. CT.4

12 www.irf.com LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN - B - 1.32 (.052) 1.22 (.048) 3X 0.55 (.022) 0.46 (.018) 2.92 (.115) 2.64 (.104) 4.69 (.185) 4.20 (.165) 3X 0.93 (.037) 0.69 (.027) 4.06 (.160) 3.55 (.140) 1.15 (.045) MIN 6.47 (.255) 6.10 (.240) 3.78 (.149) 3.54 (.139) - A - 10.54 (.415) 2.62 (.103) 15.24 (.600) 14.84 (.584) 14.09 (.555) 13.47 (.530) 3X 1.40 (.055) 1.15 (.045) 2.54 (.100) 0.36 (.014) M B A M 1 2 3 NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. HEXFET 1- GATE 2- DRAIN 3- SOURCE 4- DRAIN LEAD ASSIGNMENTS IGBTs, CoPACK 1- GATE 2- COLLECTOR 3- EMITTER 4- COLLECTOR /G84/G79/G45/G50/G50/G48/G65/G66/G32 /G80/G97/G99/G107/G97/G103/G101/G32 /G79/G117/G116/G108/G105/G110/G101 Dimensions are shown in millimeters (inches) /G84/G79/G45/G50/G50/G48/G65/G66/G32/G80/G97/G114/G116/G32/G77/G97/G114/G107/G105/G110/G103/G32/G73/G110/G102/G111/G114/G109/G97/G116/G105/G111/G110 EXA M PLE: IN THE A SSEMBLY LINE "C " T HIS IS AN IRF1010 LOT CODE 1789 ASS EMB LED ON WW 19, 1997 PART NUMBE R AS S E MB L Y LOT C ODE DA TE C ODE YEAR 7 = 1997 LINE C WE EK 19 LOG O RECTIFIER INTERNAT IONAL Note: "P" in assembly line position indicates "Lead-Free"

www.irf.com 13 /G68/G50/G80/G97/G107/G32/G80/G97/G114/G116/G32/G77/G97/G114/G107/G105/G110/G103/G32/G73/G110/G102/G111/G114/G109/G97/G116/G105/G111/G110 /G68/G50/G80/G97/G107/G32/G80/G97/G99/G107/G97/G103/G101/G32/G79/G117/G116/G108/G105/G110/G101 Dimensions are shown in millimeters (inches) Note: "P" in as s embly line pos ition indicates "Lead-F ree" F5 30 S T HIS IS A N IRF530S WITH LOT CODE 8024 ASSEMBLED ON WW 02, 2000 IN THE A S SEMBLY LINE "L" A SSEM BLY LO T C O D E INTERNA T IONA L RECT IFIER LOG O PA RT NUM BER DA TE CODE YEAR 0 = 2000 WE E K 02 LIN E L /G79/G82 F530S A = A SSEM BLY SITE C O D E WEEK 02 P = DE S IGNAT E S L E AD-F R E E PRODUCT (OPTIONA L) RECTIFIER INTERNATIONAL LO G O LO T C O DE A SSEM BLY YEAR 0 = 2000 DAT E CODE PA RT NUM BER

14 www.irf.com TO-262 Part Marking Information Dimensions are shown in millimeters (inches) AS S E MB L Y LO T C O DE RECTIFIER INT ERNAT IONALAS S E MB LE D ON WW 19, 1997 Note: "P" in a ssembly line pos ition indicates "L ead-F ree" IN T HE ASS EMB LY LINE "C" LO G O THIS IS AN IRL3103L LOT CODE 1789 EXA M PLE: LINE C DATE CODE WEE K 19 YE AR 7 = 1997 PA RT NUMBER PA RT NUMBER LO G O LO T C O DE AS S E MB L Y INT ERNAT IONAL RECTIFIER PRODUC T (OPTIO NA L) P = DE S IGNAT E S L E AD-F R E E A = AS S E MB L Y S IT E CODE WEE K 19 YE AR 7 = 1997 DATE CODE OR

www.irf.com 15 IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information . 08/04 Data and specifications subject to change without notice. This product has been designed and qualified for Industrial market. Qualification Standards can be found on IR’s Web site. Notes: /G129 This is only applied to TO-220AB package /G130/G32This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. /G131 Energy losses include "tail" and diode reverse recovery. /G132 VCC = 80% (VCES), VGE = 20V, L = 100µH, RG = 47Ω. TO-220 package is not recommended for Surface Mount Application /G68/G50/G80/G97/G107/G32/G84/G97/G112/G101/G32/G38/G32/G82/G101/G101/G108/G32/G73/G110/G102/G111/G114/G109/G97/G116/G105/G111/G110 Dimensions are shown in millimeters (inches) TRR FEED DIRECTION 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) TRL FEED DIRECTION 10.90 (.429) 10.70 (.421) 16.10 (.634) 15.90 (.626) 1.75 (.069) 1.25 (.049) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 4.72 (.136) 4.52 (.178) 24.30 (.957 23.90 (.941) 0.368 (.0145) 0.342 (.0135) 1.60 (.063) 1.50 (.059) 13.50 (.532) 12.80 (.504) 330.00 (14.173) MAX. 27.40 (1.079) 23.90 (.941) 60.00 (2.362) MIN. 30.40 (1.197) MAX. 26.40 (1.039) 24.40 (.961) NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.