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Feb 2012 http://www.genesicsemi.com/index.php/sic-products/copack Pg1 of 6 IGBT/SiC Diode Co-pack Features Package Optimal Punch Through (OPT) technology SiC freewheeling diode Positive temperature coefficient for easy paralleling Extremely fast switching speeds Temperature independent switching behavior of SiC rectifier Best RBSOA/SCSOA capability in the industry High junction temperature Industry standard packaging RoHS Compliant SOT – 227 Advantages Applications Industry's highest switching speeds High temperature operation Improved circuit efficiency Low switching losses Solar Inverters Aerospace Actuators Server Power Supplies Resonant Inverters > 100 kHz Inductive Heating Electronic Welders Maximum Ratings at Tj = 175 °C, unless otherwise specified Parameter Symbol Conditions Values Unit IGBT Collector-Emitter Voltage V CES 1200 V DC-Collector Current I C TC ≤ 130 °C 100 A Peak Collector Current I CM Limited by Tvjmax 200 A Gate Emitter Peak Voltage V GES ± 20 V IGBT Short Circuit SOA t psc VCC = 900 V, VCEM ≤ 1200 V VGE ≤ 15 V, Tvj ≤ 125 ºC 10 μs Operating Temperature T vj -40 to +175 °C Storage Temperature T stg -40 to +175 °C Isolation Voltage V ISOL ISOL < 1 mA, 50/60 Hz, t = 1 s 3000 V Free-wheeling Silicon Carbide diode DC-Forward Current I F TC ≤ 130 ºC 100 A Non Repetitive Peak Forward Current I FM TC = 25 ºC, tP = 10 μs tbd A Surge Non Repetitive Forward Current I F,SM tP = 10 ms, half sine, TC = 25 ºC tbd A Thermal Characteristics Thermal resistance, junction - case R thJC IGBT 0.08 °C/W Thermal resistance, junction - case R thJC SiC Diode 0.53 °C/W Mechanical Properties Values min. typ. max. Mounting Torque M d 1.5 Nm Terminal Connection Torque 1.3 1.5 Nm Weight 29 g Case Color Black Dimensions 38 x 25.4 x 12 mm VCES = 1200 V ICM = 100 A VCE(SAT) = 1.9 V 3 2
Feb 2012 http://www.genesicsemi.com/index.php/sic-products/copack Pg2 of 6 Electrical Characteristics at Tj = 175 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. IGBT Gate Threshold Voltage V GE(th) VGE = VCE, IC = 4 mA, Tj = 25 ºC 5 6.2 7 V Collector-Emitter Leakage Current ICES,25 VGE = 0 V, VCE = VCES, Tj = 25 ºC 0.10 1 mA ICES,175 VGE = 0 V, VCE = VCES, Tj = 175 ºC 3.15 mA Gate-Leakage Current I GES VCE = 0 V, VGE = 20 V, Tj = 175 ºC -400 400 nA Collector-Emitter Threshold Voltage V CE(TO) Tj= 25ºC 1.1 V Collector-Emitter Slope Resistance RCE,25 VGE = 15 V, Tj = 25 ºC 7.9 m Ω RCE,175 VGE = 15 V, Tj = 175 ºC 11.4 m Ω Collector-Emitter Saturation Voltage V CE(SAT) IC = 100 A, VGE = 15 V, Tj = 25 ºC (175 ºC) 1.9 (2.2) V Input Capacitance C ies VGE = 0 V, VCE = 25 V, f = 1 MHz, Tj = 150 ºC 8.55 nF Output Capacitance C oes 1.39 nF Reverse Transfer Capacitance C res 0.25 nF Internal Gate Resistance R Gint 2 Ω Gate Charge Q G VCC= 750 V, IC = 100 A, VGE= -8..15 V, Tj= 25 ºC (125 °C) 900 (900) nC Module Lead Resistance R mod Tc= 25 ºC (175 ºC) tbd m Ω Reverse Bias Safe Operating Area RBSOA Tj=175 ºC, Rg=56Ω, VCC=1200 V, VGE=15 V 150 A Short Circuit Current I sc Tj = 175 ºC, Rg = 56Ω, VCC = 900 V, VGE = ±15 V 470 A Short Circuit Duration t sc 10 μs Rise Time t r VCC= 800 V, IC = 100 A, Rgon = Rgoff = 10 Ω, VGE(on)= 15 V, VGE(off)= -8 V, LS = 0.8 µH, Tj= 25 ºC 254 ns Fall Time t f 153 ns Turn On Delay Time t d(on) 244 ns Turn Off Delay Time t d(off) 488 ns Turn-On Energy Loss Per Pulse E on 14.2 mJ Turn-Off Energy Loss Per Pulse E off 15.7 mJ Rise Time t r VCC= 800 V, IC = 100 A, Rgon = Rgoff = 10 Ω, VGE(on)= 15 V, VGE(off)= -8 V, LS = 0.8 µH, Tj= 175 ºC 211 ns Fall Time t f 172 ns Turn On Delay Time t d(on) 240 ns Turn Off Delay Time t d(off) 636 ns Turn-On Energy Loss Per Pulse E on 11.1 mJ Turn-Off Energy Loss Per Pulse E off 21.8 mJ Free-wheeling Silicon Carbide Diode Forward Voltage V F IF = 100 A, VGE = 0 V, Tj = 25 ºC (175 ºC ) 2.08 (3.5) V Threshold Voltage at Diode V D(TO) Tj = 25 ºC 0.8 V Peak Reverse Recovery Current I rrm IF = 100 A, VGE = 0 V, VR = 800 V, -dIF/dt = 625 A/µs, Tj = 175 ºC 10 A Reverse Recovery Time t rr 100 ns Rise Time t r VCC= 800 V, IC = 100 A, Rgon = Rgoff = 10 Ω, VGE(on)= 15 V, VGE(off)= -8 V, LS = 0.8 µH, Tj= 25 ºC 148 ns Fall Time t f 336 ns Turn-On Energy Loss Per Pulse E on 218 μJ Turn-Off Energy Loss Per Pulse E off 113 μJ Reverse Recovery Charge Q rr 730 nC Rise Time t r VCC= 800 V, IC = 100 A, Rgon = Rgoff = 10 Ω, VGE(on)= 15 V, VGE(off)= -8 V, LS = 0.8 µH, Tj= 175 ºC 178 ns Fall Time t f 268 ns Turn-On Energy Loss Per Pulse E on 23 μJ Turn-Off Energy Loss Per Pulse E off 334 μJ Reverse Recovery Charge Q rr 480 nC
Feb 2012 http://www.genesicsemi.com/index.php/sic-products/copack Pg6 of 6 Package Dimensions: SOT-227 PACKAGE OUTLINE NOTE 1. CONTROLLED DIMENSION IS INCH. DIMENSION IN BRACKET IS MILLIMETER. 2. DIMENSIONS DO NOT INCLUDE END FLASH, MOLD FLASH, MATERIAL PROTRUSIONS
Revision History
Date Revision Comments Supersedes 2013/02/08 2 Updated Electrical Characteristics 2012/07/30 1 Second generation release GA100XCP12-227 2011/01/06 0 Initial release Published by GeneSiC Semiconductor, Inc.
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Dulles, VA 20166 GeneSiC Semiconductor, Inc. reserves right to make changes to the product specifications and data in this document without notice. GeneSiC disclaims all and any warranty and liability arising out of use or application of any product. No license, express or implied to any intellectual property rights is granted by this document. Unless otherwise expressly indicated, GeneSiC products are not designed, tested or authorized for use in life-saving, medical, aircraft navigation, communication, air traffic control and weapons systems, nor in applications where their failure may result in death, personal injury and/or property damage.