GB03SLT12-220 GENESIC | Alldatasheet
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Technical content
November 2010 Preliminary Datasheet http://www.genesicsemi.com Page 1 of 4 GB03SLT12-220 Silicon Carbide Power = 1200 V Schottky Diode = 3 A = 11 nC Features Package TO – 220AC Advantages Applications Parameter Symbol Conditions Values Unit Repetitive peak reverse voltage 1200 V Continuous forward current 3A RMS forward current 5A 10 A Non-repetitive peak forward current 45 A 0.5 Power dissipation 85 W Operating and storage temperature -55 to 175 °C Parameter Symbol Conditions Values Unitmin. typ. max. Diode forward voltage 1.65 V2.90 Reverse current 3 µA10 Total capacitive charge 11 nC Switching time < 15 ns Total capacitance C 102 pF18 Thermal Characteristics Thermal resistance, junction - case 1.76 °C/W Mechanical Properties Mounting torque M 0.6 Nm VRRM IF QC
- 1200 V Schottky rectifier • RoHS Compliant
- 175 °C maximum operating temperature
- Zero reverse recovery charge
- Positive temperature coefficient of VF
- Extremely fast switching speeds
- Temperature independent switching behavior
- Lowest figure of merit QC/IF
- Improved circuit efficiency (Lower overall cost) • Power Factor Correction (PFC)
- Low switching losses • Switched-Mode Power Supply (SMPS)
- Ease of paralleling devices without thermal runaway • Solar Inverters
- Smaller heat sink requirements • Wind Turbine Inverters
- Industry's lowest reverse recovery charge • Motor Drives
- Industry's lowest device capacitance • Induction Heating
- Ideal for output switching of power supplies • Uninterruptible Power Supply (UPS)
- Best in class reverse leakage current at operating temperature • Voltage Clamping
- High Voltage Multipliers Maximum Ratings, at Tj = 175 °C, unless otherwise specified VRRM IF TC ≤ 150 °C IF(RMS) TC ≤ 150 °C Surge non-repetitive forward current, Half Sine Wave IF,SM T C = 25 °C, tp = 10 ms IF,max TC = 25 °C, tp = 10 µs i2t value ∫i2 dt TC = 25 °C, tp = 10 ms A2s Ptot TC = 25 °C Tj, Tstg Electrical Characteristics, at Tj = 175 °C, unless otherwise specified VF IF = 3 A, Tj = 25 °C IF = 3 A, Tj = 175 °C IR VR = 1200 V, Tj = 25 °C VR = 1200 V, Tj = 175 °C QC VR = 950 V, IF ≤ IF,max ts dIF/dt = 330 A/μs, Tj = 150 °C VR = 3 V, f = 1 kHz, Tj = 25 °C VR = 200 V, f = 1 kHz, Tj = 25 °C RthJC 1. Considering worst case Zth conditions http://www.genesicsemi.com/index.php/sic-products/schottky Case PIN 1 PIN 2 CASE
November 2010 Preliminary Datasheet http://www.genesicsemi.com Page 4 of 4 GB03SLT12-220
Revision History
Date Revision Comments Supersedes 2010/11/20 1 Second generation release GA03SLT12-220 Published by GeneSiC Semiconductor, Inc.
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Dulles, VA 20166 GeneSiC Semiconductor, Inc. reserves right to make changes to the product specifications and data in this document without notice. GeneSiC disclaims all and any warranty and liability arising out of use or application of any product. No license, express or i mplied to any intellectual property rights is granted by this document. Unless otherwise expressly indicated, GeneSiC products are not de signed, tested or authorized for use in life-saving, medical, aircraft navigation, communication, air traffic control and weapons systems, nor in applications where their failure may result in deat h, personal injury and/or property damage.