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Technical content

3300V 0.3A SiC Schottky MPS™ Diode April 2019 Rev1.2 www.genesicsemi.com/schottky_mps/GAP3SLT33-21 4.pdf Page 1 of 6 Silicon Carbide Schottky Diode Features Package

  • High Avalanche (UIS) Capability
  • Enhanced Surge Current Capability
  • Superior Figure of Merit QC/IF
  • Low Thermal Resistance
  • 175 °C Maximum Operating Temperature
  • Temperature Independent Switching Behavior
  • Positive Temperature Coefficient of VF
  • Extremely Fast Switching Speeds DO-214 Advantages Applications
  • Low Standby Power Losses
  • Improved Circuit Efficiency (Lower Overall Cost)
  • Low Switching Losses
  • Ease of Paralleling without Thermal Runaway
  • Smaller Heat Sink Requirements
  • Low Reverse Recovery Current
  • Low Device Capacitance
  • Low Reverse Leakage Current
  • High Voltage Sensing
  • Power Supplies
  • Down-Hole Oil Drilling
  • Geothermal Instrumentation
  • High Voltage Multipliers Absolute Maximum Ratings (At TC = 25 °C Unless Otherwise Stated) Parameter Symbol Conditions Values Unit Repetitive Peak Reverse Voltage V RRM 3300 V Continuous Forward Current I F T C ≤ 125 °C, D = 1 0.3 A Non-Repetitive Peak Forward Surge Current, Half Sine Wave IF,SM TC = 25 °C, tP = 10 ms 2 A TC = 150 °C, tP = 10 ms 1 Repetitive Peak Forward Surge Current, Half Sine Wave IF,RM TC = 25 °C, tP = 10 ms 1.4 A TC = 150 °C, tP = 10 ms 1 Non-Repetitive Peak Forward Surge Current IF,max T C = 25 °C, tP = 10 µs 10 A i2t Value ∫i 2 dt T C = 25 °C, tP = 10 ms 0.02 A 2s Diode Ruggedness dV/dt V R = 0 ~ 960 V 100 V/ns Power Dissipation P tot T C = 25 °C 105 W Operating and Storage Temperature T j , Tstg -55 to 175 °C VRRM = 3300 V IF (Tc ≤ 125°C) = 0.3 A QC = 3 n C A K A K

3300V 0.3A SiC Schottky MPS™ Diode April 2019 Rev1.2 www.genesicsemi.com/schottky_mps/GAP3SLT33-21 4.pdf Page 2 of 6

Electrical Characteristics

Parameter Symbol Conditions Values Unit Min. Typ. Max. Diode Forward Voltage V F IF = 0.3 A, Tj = 25 °C 1.7 2.2 V IF = 0.3 A, Tj = 175 °C 4.7 5.2 Reverse Current I R VR = 3300 V, Tj = 25 °C 1 1 0 µA VR = 3300 V, Tj = 175 °C 10 100 Total Capacitive Charge Q C IF ≤ IF,MAX dIF/dt = 200 A/μs Tj = 175 °C VR = 1600 V 2.9 n C VR = 2400 V 3.6 Switching Time t s VR = 1600 V < 10 ns VR = 2400 V Total Capacitance C VR = 1 V, f = 1 MHz 3 8 pF VR = 3300 V, f = 1 MHz 1 . 3 Thermal / Mechanical Characteristics Thermal Resistance, Junction - Case R thJC 1.42 °C/W Weight W T 0.1 g

3300V 0.3A SiC Schottky MPS™ Diode April 2019 Rev1.2 www.genesicsemi.com/schottky_mps/GAP3SLT33-21 4.pdf Page 5 of 6 Package Dimensions Recommended Solder Pad Layout NOTE 1. CONTROLLED DIMENSION IS INCH. DIMENSION IN BRACKET IS MILLIMETER. 2. DIMENSIONS DO NOT INCLUDE END FLASH, MOLD FLASH, MATERIAL PROTRUSIONS

3300V 0.3A SiC Schottky MPS™ Diode Copyright © 2019 GeneSiC Semiconductor Inc. All Rights Reserved The information in this document is subject to change without notice Published by GeneSiC Semiconductor, Inc.

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Dulles, VA 20166 April 2019 Rev1.3 Page 6 of 6 RoHS Compliance The levels of RoHS restricted materials in this product are bel ow the maximum concentration values (also referred to as the threshold limits) permitted for such substan ces, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS 2), as adopted by EU member states on January 2, 2013 and amended on March 31, 2015 by EU Directive 2015/863. RoHS Declarations for this product can be obtained from your GeneSiC representative. REACh Compliance REACh substances of high concern (SVHCs) information is availab le for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future, please contact a GeneSiC representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the prod uct could lead to death, personal injury or property damage, including but not limited to equipment used in the oper ation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control systems. GeneSiC disclaims all and any warranty and liability arising ou t of use or application of any product. No license, express or implied to any intellectual property rights is granted by this document. Related Links

  • SPICE Models: https://www.gen esicsemi.com/schottky-mps
  • Evaluation Boards: https://www.g enesicsemi.com/technical-support
  • Quality Manual: https://www.genes icsemi.com/technical-support/quality-manual
  • Compliance: https://www.genesics emi.com/technical-support/compliance
  • Reliability Report: https://www.g enesicsemi.com/technical-support/reliability www.genesicsemi.com/schottky-mps