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Aug 2014 http://www.genesicsemi.com/index.php/sic-products/schottky Pg1 of 4 Silicon Carbide Power Schottky Diode Features Package  3300 V Schottky rectifier  175 °C maximum operating temperature  Electrically isolated base-plate  Positive temperature coefficient of VF  Fast switching speeds  Superior figure of merit QC/IF  RoHS Compliant SMB / DO – 214AA Advantages Applications  Improved circuit efficiency (Lower overall cost)  Significantly reduced switching losses compare to Si PiN diodes  Ease of paralleling devices without thermal runaway  Smaller heat sink requirements  Low reverse recovery current  Low device capacitance  Down Hole Oil Drilling, Geothermal Instrumentation  High Voltage Multipliers  Military Power Supplies Maximum Ratings at Tj = 175 °C, unless otherwise specified Parameter Symbol Conditions Values Unit Repetitive peak reverse voltage VRRM 3300 V Continuous forward current IF TC ≤ 125 °C 0.3 A RMS forward current IF(RMS) TC ≤ 125 °C 0.35 A Surge non-repetitive forward current, Half Sine Wave IF,SM TC = 25 °C, tP = 10 ms 2 A TC = 125 °C, tP = 10 ms 1 Non-repetitive peak forward current IF,max TC = 25 °C, tP = 10 µs 10 A I2t value ∫i2 dt TC = 25 °C, tP = 10 ms 0.1 A2S Power dissipation Ptot TC = 25 °C 25 W Operating and storage temperature Tj , Tstg -55 to 175 °C Electrical Characteristics at Tj = 175 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Reverse current IR VR = 3300 V, Tj = 25 °C 1 10 µA VR = 3300 V, Tj = 175 °C 10 100 Total capacitive charge QC IF ≤ IF,MAX dIF/dt = 35 A/μs Tj = 175 °C VR = 1500 V 20 nC Switching time ts VR = 1500 V < 60 ns Total capacitance C VR = 1 V, f = 1 MHz, Tj = 25 °C 42 pF VR = 400 V, f = 1 MHz, Tj = 25 °C 8 VR = 1000 V, f = 1 MHz, Tj = 25 °C 7 Thermal Characteristics Thermal resistance, junction – Cu lead frame RthJC 1.42 °C/W VRRM = 3300 V IF (Tc = 25°C) = 0.3 A QC = 20 nC PIN 1 PIN 2

Aug 2014 http://www.genesicsemi.com/index.php/sic-products/schottky Pg4 of 4

Revision History

Date Revision Comments Supersedes 2014/12/19 2 Updated Electrical Characteristics 2014/08/26 1 Updated Electrical Characteristics 2013/09/09 0 Initial Release Published by GeneSiC Semiconductor, Inc.

43670 Trade Center Place Suite 155

Dulles, VA 20166 GeneSiC Semiconductor, Inc. reserves right to make changes to the product specifications and data in this document without notice. GeneSiC disclaims all and any warranty and liability arising out of use or application of any product. No license, express or implied to any intellectual property rights is granted by this document. Unless otherwise expressly indicated, GeneSiC products are not designed, tested or authorized for use in life-saving, medical, aircraft navigation, communication, air traffic control and weapons systems, nor in applications where their failure may result in death, personal injury and/or property damage.

Nov 2013 http://www.genesicsemi.com/index.php/sic-products/schottky Pg1 of 1 SPICE Model Parameters Copy the following code into a SPICE software program for simulation of the GAP3SLT33-214 device. * MODEL OF GeneSiC Semiconductor Inc. * $Revision: 1.0 $ * $Date: 09-SEP-2013 $ * GeneSiC Semiconductor Inc. * 43670 Trade Center Place Ste. 155 * Dulles, VA 20166 * http://www.genesicsemi.com/index.php/sic-products/schottky * COPYRIGHT (C) 2013 GeneSiC Semiconductor Inc. * ALL RIGHTS RESERVED * These models are provided "AS IS, WHERE IS, AND WITH NO WARRANTY * OF ANY KIND EITHER EXPRESSED OR IMPLIED, INCLUDING BUT NOT LIMITED * TO ANY IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A * PARTICULAR PURPOSE." * Models accurate up to 2 times rated drain current. * Start of GAP3SLT33-214 SPICE Model .SUBCKT GAP3SLT33 ANODE KATHODE R1 ANODE INT R=((TEMP-24)*0.0535); Temperature Dependant Resistor D1 INT KATHODE GAP3SLT33_25C; Call the 25C Diode Model D2 ANODE KATHODE GAP3SLT33_PIN; Call the PiN Diode Model .MODEL GAP3SLT33_25C D + IS 1.39E-14 RS 2.88 + N 1.0120127 IKF 36.05007504 + EG 1.2 XTI -3 + CJO 6.01E-11 VJ 0.924257443 + M 0.3084545 FC 0.5 + TT 1.00E-10 BV 3300 + IBV 1.00E-03 VPK 3300 + IAVE 3.00E-01 TYPE SiC_Schottky + MFG GeneSiC_Semiconductor .MODEL GAP3SLT33_PIN D + IS 178.99E-18 RS 15 + N 5 EG 3.23 + XTI 50 FC 0.5 + TT 0 BV 3300 + IBV 1.00E-03 VPK 3300 + IAVE 3.00E-01 TYPE SiC_PiN .ENDS * End of GAP3SLT33-214 SPICE Model