DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 5

Technical content

Features

 3300 V Schottky rectifier  175 °C maximum operating temperature  Electrically isolated base-plate  Positive temperature coefficient of VF  Fast switching speeds  Superior figure of merit QC/IF Advantages Applications  Improved circuit efficiency (Lower overall cost)  Significantly reduced switching losses compare to Si PiN diodes  Ease of paralleling devices without thermal runaway  Smaller heat sink requirements  Low reverse recovery current  Low device capacitance  Down Hole Oil Drilling, Geothermal Instrumentation  High Voltage Multipliers  Military Power Supplies Electrical Specifications Absolute Maximum Ratings Parameter Symbol Conditions Values Unit Repetitive peak reverse voltage VRRM 3300 V Continuous forward current IF TVJ < 175 °C 0.3 A RMS forward current IF(RMS) TC ≤ 125 °C 0.35 A Surge non-repetitive forward current, Half Sine Wave IF,SM TC = 25 °C, tP = 10 ms tbd A TC = 125 °C, tP = 10 ms tbd Non-repetitive peak forward current IF,max TC = 25 °C, tP = 10 µs tbd A I2t value ∫i2 dt TC = 25 °C, tP = 10 ms tbd A2S Power dissipation Ptot TC = 25 °C 25 W Operating and storage temperature Tj , Tstg -55 to 175 °C

Electrical Characteristics

Parameter Symbol Conditions Values Unit min. typ. max. Diode forward voltage VF IF = 0.3 A, Tj = 25 °C 1.7 V IF = 0.3 A, Tj = 175 °C 3.9 Reverse current IR VR = 3300 V, Tj = 25 °C 1.3 5 µA VR = 3300 V, Tj = 175 °C 14 20 Total capacitive charge QC IF ≤ IF,MAX dIF/dt = 35 A/μs Tj = 175 °C VR = 1500 V 20 nC Switching time ts VR = 1500 V < 60 ns Total capacitance C VR = 1 V, f = 1 MHz, Tj = 25 °C 42 pF VR = 400 V, f = 1 MHz, Tj = 25 °C 8 VR = 1000 V, f = 1 MHz, Tj = 25 °C 7 VRRM = 3300 V VF = 1.7 V IF = 0.3 A QC = 20 nC

Die Datasheet GAP3SHT33-CAL Dec 2014 http://www.genesicsemi.com/index.php/hit-sic/baredie Pg3 of 4 Mechanical Specifications Mechanical Parameters Raster Size 1.39 x 1.39 mm2 55 x 55 mil2 Anode pad size 0.75 x 0.75 mm2 30 x 30 mil2 Area total / active 1.93/0.56 mm2 3025/900 mil2 Thickness 360 µm 14 mil Wafer Size 100 mm 3937 mil Flat Position 0 deg 0 deg Passivation frontside Polyimide Pad Metal (Anode) 4000 nm Al Backside Metal (Cathode) 400 nm Ni + 200 nm Au -system Die Bond Electrically conductive glue or solder Wire Bond Al, ≤ 5 mil Reject ink dot size Φ ≥ 0.3 mm Recommended storage environment Store in original container, in dry nitrogen, < 6 months at an ambient temperature of 23 °C Chip Dimensions: mm mil DIE A 1.39 55 B 1.39 55 METAL C 0.75 30 D 0.75 30

Die Datasheet GAP3SHT33-CAL Dec 2014 http://www.genesicsemi.com/index.php/hit-sic/baredie Pg4 of 4

Revision History

Date Revision Comments Supersedes 2014/12/19 1 Updated Electrical Characteristics 2013/09/09 0 Initial Release Published by GeneSiC Semiconductor, Inc.

43670 Trade Center Place Suite 155

Dulles, VA 20166 GeneSiC Semiconductor, Inc. reserves right to make changes to the product specifications and data in this document without notice. GeneSiC disclaims all and any warranty and liability arising out of use or application of any product. No license, express or implied to any intellectual property rights is granted by this document. Unless otherwise expressly indicated, GeneSiC products are not designed, tested or authorized for use in life-saving, medical, aircraft navigation, communication, air traffic control and weapons systems, nor in applications where their failure may result in death, personal injury and/or property damage.

Die Datasheet GAP3SHT33-CAL Mar 2014 http://www.genesicsemi.com/index.php/hit-sic/baredie Pg1 of 1 SPICE Model Parameters This is a secure document. Please copy this code from the SPICE model PDF file on our website (http://www.genesicsemi.com/images/hit_sic/baredie/schottky/GAP3SHT33-CAL_SPICE.pdf) into LTSPICE (version 4) software for simulation of the GAP3SHT33-CAL. * MODEL OF GeneSiC Semiconductor Inc. * $Revision: 1.1 $ * $Date: 03-MAR-2014 $ * GeneSiC Semiconductor Inc. * 43670 Trade Center Place Ste. 155 * Dulles, VA 20166 * COPYRIGHT (C) 2013 GeneSiC Semiconductor Inc. * ALL RIGHTS RESERVED * These models are provided "AS IS, WHERE IS, AND WITH NO WARRANTY * OF ANY KIND EITHER EXPRESSED OR IMPLIED, INCLUDING BUT NOT LIMITED * TO ANY IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A * PARTICULAR PURPOSE." * Models accurate up to 2 times rated drain current. * Start of GAP3SHT33-CAL SPICE Model .SUBCKT GAP3SHT33 ANODE KATHODE R1 ANODE INT R=((TEMP-24)*0.0535) D1 INT KATHODE GAP3SHT33_25C D2 ANODE KATHODE GAP3SHT33_PIN .MODEL GAP3SHT33_25C D + IS 1.39E-14 RS 2.88 + N 1.0120127 IKF 36.05007504 + EG 1.2 XTI -3 + CJO 6.01E-11 VJ 0.924257443 + M 0.3084545 FC 0.5 + TT 1.00E-10 BV 3700 + IBV 1.00E-03 VPK 3300 + IAVE 3.00E-01 TYPE SiC_Schottky + MFG GeneSiC_Semiconductor .MODEL GAP3SHT33_PIN D + IS 178.99E-18 RS 15 + N 5 EG 3.23 + XTI 50 FC 0.5 + TT 0 BV 3700 + IBV 1.00E-03 VPK 3300 + IAVE 3.00E-01 TYPE SiC_PiN .ENDS * End of GAP3SHT33- CAL SPICE Model