GA75TS60U

GA75TS60U IRF | Alldatasheet

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"HALF-BRIDGE" IGBT INT-A-PAK FeaturesFeaturesFeaturesFeaturesFeatures VCES = 600V VCE (on) typ. = 1.7V @V GE = 15V, IC = 75A Parameter Typ. Max. Units R θJC Thermal Resistance, Junction-to-Case - IGBT — 0.44 R θJC Thermal Resistance, Junction-to-Case - Diode — 0.70 °C/W R θCS Thermal Resistance, Case-to-Sink - Module 0.1 — Mounting Torque, Case-to-Heatsink /G83 — 6.0 N m Mounting Torque, Case-to-Terminal 1, 2 & 3 /G84 — 5.0 Weight of Module 200 — g Thermal / Mechanical Characteristics Ultra-FastTM Speed IGBT Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Voltage 600 V IC @ TC = 25°C Continuous Collector Current 75 ICM Pulsed Collector Current 150 A ILM Peak Switching Current‚ 150 IFM Peak Diode Forward Current 150 VGE Gate-to-Emitter Voltage ±20 V VISOL RMS Isolation Voltage, Any Terminal To Case, t = 1 min 2500 PD @ TC = 25°C Maximum Power Dissipation 285 W PD @ TC = 85°C Maximum Power Dissipation 150 TJ Operating Junction Temperature Range -40 to +150 °C TSTG Storage Temperature Range -40 to +125  UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode  Very low conduction and switching losses  HEXFRED ™ antiparallel diodes with ultra- soft recovery  Industry standard package  UL approved Benefits  Increased operating efficiency  Direct mounting to heatsink  Performance optimized for power conversion: UPS, SMPS, Welding  Lower EMI, requires less snubbing  Generation 4 IGBT technology www.irf.com 1 PD -50050D

2 www.irf.com Parameter Min. Typ. Max. Units Conditions Q g Total Gate Charge (turn-on) — 340 510 V CC = 400V, VGE = 15V Q ge Gate - Emitter Charge (turn-on) — 48 72 nC I C = 75A Q gc Gate - Collector Charge (turn-on) — 120 170 T J = 25°C td(on) Turn-On Delay Time — 110 — R G1 = 27Ω , RG2 = 0Ω , tr Rise Time — 94 — ns I C = 75A td(off) Turn-Off Delay Time — 250 — V CC = 360V tf Fall Time — 180 — V GE = ±15V Eon Turn-On Switching Energy — 1.95 — mJ Eoff (1) Turn-Off Switching Energy — 4.4 — Ets (1) Total Switching Energy — 6.35 12.6 C ies Input Capacitance — 7880 — V GE = 0V C oes Output Capacitance — 770 — pF V CC = 30V C res Reverse Transfer Capacitance — 98 — ƒ = 1 MHz trr Diode Reverse Recovery Time — 133 — ns I C = 75A Irr Diode Peak ReverseCurrent — 94 — A R G1 = 27Ω Q rr Diode Recovery Charge — 6274 — nC R G2 = 0Ω di(rec)M /dt Diode Peak Rate of Fall of Recovery — 2061 — A/µs V CC = 360V During tb di/dt =1300A/µs Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltage 600 — — V GE = 0V, IC = 1mA VCE(on) Collector-to-Emitter Voltage — 1.7 2.2 V GE = 15V, IC = 75A — 1.76 — V V GE = 15V, IC = 75A, TJ = 125°C VGE(th) Gate Threshold Voltage 3.0 — 6.0 I C = 0.5mA ∆VGE(th)/∆ TJ Temperature Coeff. of Threshold Voltage— -11 — mV/°C V CE = VGE , IC = 500µA gfe Forward Transconductance „ — 83 — S V CE = 25V, IC = 75A ICES Collector-to-Emitter Leaking Current — — 1.0 mA V GE = 0V, VCE = 600V ——1 0 V GE = 0V, VCE = 600V, TJ = 125°C VFM Diode Forward Voltage - Maximum — 3.3 — V I F = 75A, VGE = 0V — 3.1 — I F = 75A, VGE = 0V, TJ = 125°C IGES Gate-to-Emitter Leakage Current — — 250 nA V GE = ±20V Dynamic Characteristics - TJ = 125°C (unless otherwise specified) Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

www.irf.com 3 Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics 0.1 1 10 100 f, Frequency (KHz) LOAD CURRENT (A) 100 1000 1.0 1.5 2.0 2.5 V , Collector-to-Emitter Voltage (V) I , Collector-to-Emitter Current (A) CE C /G20 V = 15V 20µs PULSE WIDTH GE /G20T = 25 CJ o /G20T = 150 CJ o 100 1000 V , Gate-to-Emitter Voltage (V) I , Collector-to-Emitter Current (A) GE C /G20 V = 50V 5µs PULSE WIDTH CC /G20T = 25 CJ o /G20T = 150 CJ o For both: Duty cycle: 50% T = 125°C T = 90°C Gate drive as specified sink J Power Dissipation = W270 Power Dissipation = 65 W 25VVCE = 25V 80µs PULSE WIDTH

4 www.irf.com Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature Fig. 4 - Maximum Collector Current vs. Case Temperature -60 -40 -20 0 20 40 60 80 100 120 140 160 1.0 2.0 3.0 T , Junction Temperature ( C) V , Collector-to-Emitter Voltage(V) J ° CE /G20 V = 15V 80 us PULSE WIDTH GE /G20I = A37.5C /G20I = A75C /G20I = A150C 37.5A 25 50 75 100 125 150 T , Case Temperature ( C) Maximum DC Collector Current(A) C ° TJ , Junction Temperature (°C) 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 thJC t , Rectangular Pulse Duration (Seconds ) D = 0.50 Single Pulse (Thermal Resistance ) Thermal Impedance - Z 0.01 0.02 0.05 0.10 0.20 P DM Notes: 1. Duty factor D = t / t 2. Peak T = P x Z + T 1 2 J DM thJC C

www.irf.com 5 0 10 20 30 40 50 R , Gate Resistance (Ohm) Total Switching Losses (mJ) G /G20 V = 360V V = 15V T = 25 C I = 75A CC GE J C Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Junction Temperature -60 -40 -20 0 20 40 60 80 100 120 140 160 100 T , Junction Temperature ( C ) Total Switching Losses (mJ) J ° /G20 R = Ohm V = 15V V = 360V G GE CC /G20I = A150C /G20I = A75C /G20I = A37.5C R G1 =27Ω ;RG2 = 0 Ω 125°C 1 10 100 2000 4000 6000 8000 10000 12000 14000 V , Collector-to-Emitter Voltage (V) C, Capacitance (pF) CE /G20 V C C C 0V, C C C f = 1MHz + C + C C SHORTED GE ies ge gc , ce res gc oes ce gc /G20C ies /G20C oes /G20C res 0 100 200 300 400 Q , Total Gate Charge (nC) V , Gate-to-Emitter Voltage (V) G GE /G20 V = 400V I = 75A CC C R G1 , Gate Resistance ( Ω )

6 www.irf.com Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Reverse Bias SOA Fig. 13 - Typical Forward Voltage Drop vs. Instantaneous Forward Current Fig. 14 - Typical Stored Charge vs. dif/dt IC , Collector-to-Emitter Current ( A ) 0 40 80 120 160 200 240 I , Collector-to-emitter Current (A) Total Switching Losses (mJ) C /G20 R = Ohm T = 125 C V = 360V V = 15V G J CC GE R G1 = 27Ω ;RG2 = 0 Ω 120 160 200 0 100 200 300 400 500 600 700 CE GE SAFE OPERATING AREA V , Collector-to-Emitter Voltage (V ) A V = 20V T = 125°C V measured at terminal (Peak Voltage) GE J CE 100 1000 FM FInstantaneous Forward Current - I (A) Forward Voltage Drop - V (V) T = 125°C T = 25°C J J 2000 4000 6000 8000 10000 12000 500 1000 1500 2000 fdi /dt - (A/µs) RRQ - (nC) I = 150A I = 75A I = 38A F F F R J J V = 360V T = 125°C T = 25°C

www.irf.com 7 Fig. 15 - Typical Reverse Recovery vs. dif/dt Fig. 16 - Typical Recovery Current vs. dif/dt 120 160 200 500 1000 1500 2000 fdi /dt - (A/µs) t - (ns)rr I = 150A I = 75A I = 38AF F F R J J V = 360V T = 125°C T = 25°C 100 120 140 500 1000 1500 2000 fdi /dt - (A/µs) I - (A)IRRM I = 150A I = 75A I = 38A F F F R J J V = 360V T = 125°C T = 25°C

8 www.irf.com Ic Vce t1 t2 90% Ic10% Vce td(off) tf Ic 5% Ic t1+5µS Vce ic dt 90% Vge +Vge ∫Eoff = Fig. 18 - Test Waveforms for Circuit of Fig. 17, Defining Eoff, td(off), tf ∫Vce ie dt 5% Vce Ic IpkVcc 10% Ic Vce t1 t2 DUT VOLTAGE AND CURRENT GATE VOLTAGE D.U.T. +Vg10% +Vg 90% Ic trtd(on) DIODE REVERSE RECOVERY ENERGY tx Eon = Erec = Vd id dt t4t3 DIODE RECOVERY W AVEFORMS Ic Vpk 10% Vcc Irr 10% Irr Vcc trr Qr r = trr tx id dt Fig. 17 - Test Circuit for Measurement of ILM , Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf Fig. 19 - Test Waveforms for Circuit of Fig. 17, Defining Eon, td(on), tr Fig. 20 - Test Waveforms for Circuit of Fig. 17, Defining Erec, trr, Qrr, Irr Vd Ic dt Vce Ic dt Ic dt Vce Ic dt

www.irf.com 9 Vg GATE SIGNAL DEVICE UNDER TEST CURRENT D. U. T. VOLTAGE IN D.U.T. CURRENT IN D1 t0 t1 t2 Figure 22./G20 /G50/G75/G6C/G73/G65/G64/G20 /G43/G6F/G6C/G6C/G65/G63/G74/G6F/G72/G20 /G43/G75/G72/G72/G65/G6E/G74 /G54/G65/G73/G74/G20 /G43/G69/G72/G63/G75/G69/G74 R L= 480V

4 X IC @25°C

Figure 21./G20 /G4D/G61/G63/G72/G6F/G20 /G57/G61/G76/G65/G66/G6F/G72/G6D/G73/G20 /G66/G6F/G72/G20/G46/G69/G67/G75/G72/G65/G20 /G31/G37/G27/G73/G20/G54/G65/G73/G74/G20 /G43/G69/G72/G63/G75/G69/G74

10 www.irf.com Case Outline — INT-A-PAK Notes: /G81Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. /G82See fig. 17 /G83For screws M6. /G84For screws M5. /G85Pulse width 50µs; single shot. 321 1. ALL DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES]. 2. C O NTRO LLING DIMENSIO N: M ILLIMETER. NOT ES : 4X FAST ON TAB (110) 3X M5 8 [.314] MAX. 2X Ø 6.80 6.20 .267 .244] 4.50 3.50 [ .177 .138] 32.00 31.00 [ 1.260 1.220] 24.00 23.00 .945 .906] 30.50 29.00 1.201 1.142] 92.10 91.10 3.626 3.587] 8.00 6.60 .315 .260] 8.65 7.65 [ .341 .301] 94.70 93.70 3.728 3.689] 2X 23.50 22.50 [ .925 .886] 80.30 79.70 [ 3.161 3.138] 17.50 16.50 .689 .650] 42.00 41.00 1.654 1.614] 34.70 33.70 1.366 1.327] 2X 13.30 12.70 [ .524 .500] 0.15 [.0059] CONVEX Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.05/02