GA600GD25S

GA600GD25S IRF | Alldatasheet

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Parameter Typ. Max. Units RθJC Thermal Resistance, Junction-to-Case - IGBT — 0.065 RθJC Thermal Resistance, Junction-to-Case - Diode — 0.20 °C/W RθCS Thermal Resistance, Case-to-Sink - Module 0.04 — Mounting Torque, Case-to-Heatsink /G131 — 6.0 N m Mounting Torque, Case-to-Terminal 1, 2 /G131 — 5.0 Mounting Torque, Case-to-Terminal 3,4,5,6 — 1.5 Weight of Module 365 — g 08/27/02 /G71/G65/G54/G48/G48/G71/G68/G50/G53/G83 SINGLE SWITCH IGBT DUAL INT-A-PAK /G70/G101/G97/G116/G117/G114/G101/G115 VCES = 250V VCE(on) typ. = 1.25V @VGE = 15V, IC = 600A Thermal / Mechanical Characteristics /G32StandardTM Speed IGBT Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Voltage 250 V IC @ TC = 25°C Continuous Collector Current 600 ICM Pulsed Collector Current/G129 1200 A ILM Peak Switching Current/G130 1200 IFM Peak Diode Forward Current 1200 VGE Gate-to-Emitter Voltage ±17 V VISOL RMS Isolation Voltage, Any Terminal To Case, t = 1 min 2500 PD @ TC = 25°C Maximum Power Dissipation 1920 W PD @ TC = 85°C Maximum Power Dissipation 1000 TJ Operating Junction Temperature Range -40 to +150 °C TSTG Storage Temperature Range -40 to +125 /G66/G101/G110/G101/G102/G105/G116/G115  Increased operating efficiency  Direct mounting to heatsink  Performance optimized for power conversion: UPS, SMPS, Welding  Lower EMI, requires less snubbing  Standard speed, optimized for battery powered application  Very low conduction losses  HEXFRED TM antiparallel diodes with ultra-soft recovery  Industry standard package  UL recognition pending  Internal thermistor /G46 www.irf.com 1 PD - 50071C

/G71/G65/G54/G48/G48/G71/G68/G50/G53/G83 2 www.irf.com Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltage 250 — — V GE = 0V, IC = 1mA VCE(on) Collector-to-Emitter Voltage — 1.25 1.4 V GE = 15V, IC = 600A — 1.25 — V V GE = 15V, IC = 600A, TJ = 125°C VGE(th) Gate Threshold Voltage 3.0 — 6.0 I C = 5.0mA, VCE = 6.0V ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage — -11 — mV/°C V CE = 6.0V, IC = 5.0mA,TC= 25/125°C gfe Forward Transconductance/G32/G131— 720 — S V CE = 25V, IC = 600A ICES Collector-to-Emitter Leaking Current — — 2.0 mA V GE = 0V, VCE = 250V ——2 0 V GE = 0V, VCE = 250V, TJ = 125°C VFM Diode Forward Voltage - Maximum — 1.5 1.8 V I F = 300A, VGE = 0V — 1.5 — I F = 300A, VGE = 0V, TJ = 125°C IGES Gate-to-Emitter Leakage Current — — 1.0 µA V GE = ±14V (18V zeners gate-emitter) ∆TDP Pulse Diode Temp Rise — — 80 °C I C = 300A, t = 150msec, Tc =70°C R-T25 Thermistor, Positive Temp Coefficient 738 820 902 Ω I = 100mA,P = 2.5mW/°C (see note 1) Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge (turn-on) — 3825 5738 V CC = 200V, VGE = 15V Qge Gate - Emitter Charge (turn-on) — 555 832 nC I C = 600A Qgc Gate - Collector Charge (turn-on) — 1262 1893 T J = 25°C td(on) Turn-On Delay Time — 1060 — R G1 = 15Ω, RG2 = 0Ω, tr Rise Time — 950 — ns I C = 600A td(off) Turn-Off Delay Time — 846 — V CC = 150V, Inductor load tf Fall Time — 934 — V GE = ±15V Eon Turn-On Switching Energy — 17 — mJ See Fig. 17, 19 Eoff (1) Turn-Off Switching Energy — 105 — Ets (1) Total Switching Energy — 122 250 Cies Input Capacitance — 86063 — V GE = 0V Coes Output Capacitance — 9754 — pF V CC = 30V Cres Reverse Transfer Capacitance — 1913 — ƒ = 1 MHz trr Diode Reverse Recovery Time — 314 — ns I C = 600A Irr Diode Peak ReverseCurrent — 80 — A R G1 = 15Ω Qrr Diode Recovery Charge — 12513 — µC R G2 = 0Ω di(rec)M/dt Diode Peak Rate of Fall of Recovery — 632 — A/µs V CC = 150V During tb di/dt = 500A/µs Dynamic Characteristics - TJ = 125°C (unless otherwise specified) Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Notes: 1. The thermistor has an average rate of change of 7 Ω /°C between 20°C and 125°C. Consult U.S. Sensor data sheet for P821GS1K for details

/G71/G65/G54/G48/G48/G71/G68/G50/G53/G83 www.irf.com 3 0.1 1 10 100 100 200 300 400 500 f, Frequency (KHz) LOAD CURRENT (A) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics For both: Duty cycle: 50% T = 125°C T = 90°C Gate drive as specified sink J Power Dissipation = W 60% of rated voltage I Ideal diodes Square wave: /G51/G51/G51 100 1000 10000 V , Collector-to-Emitter Voltage (V) I , Collector Current (A) CE C V = 15V 80µs PULSE WIDTH GE T = 25 CJ ° T = 125 CJ ° 100 1000 10000 V , Gate-to-Emitter Voltage (V) I , Collector-to-Emitter Current (A) GE C V = 25V 80µs PULSE WIDTH CE T = 25 CJ ° T = 125 CJ °

/G71/G65/G54/G48/G48/G71/G68/G50/G53/G83 4 www.irf.com Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature Fig. 4 - Maximum Collector Current vs. Case Temperature 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Rectangular Pulse Duration (sec)1 thJC D = 0.50 0.01 0.02 0.05 0.10 0.20 SINGLE PULSE (THERMAL RESPONSE) A Thermal Response (Z ) P DM Notes: 1. Duty factor D = t / t 2. Peak T = P x Z + T J DM thJC C -60 -40 -20 0 20 40 60 80 100 120 140 160 0.5 1.0 1.5 2.0 T , Junction Temperature ( C) V , Collector-to-Emitter Voltage(V) J ° CE V = 15V 80 us PULSE WIDTH GE I = A1200C I = A600C I = A300C = 1000A 25 50 75 100 125 150 200 400 600 800 T , Case Temperature ( C) Maximum DC Collector Current(A) C °

/G71/G65/G54/G48/G48/G71/G68/G50/G53/G83 www.irf.com 5 250V Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Junction Temperature 0 10 20 30 40 50 110 120 130 140 150 R , Gate Resistance Total Switching Losses (mJ) G V = 150V V = 15V T = 25 C I = 600A CC GE J C ( Ω ) 0 1000 2000 3000 4000 Q , Total Gate Charge (nC) V , Gate-to-Emitter Voltage (V) G GE V = 400V I = 600A CC C 1 10 100 40000 80000 120000 160000 V , Collector-to-Emitter Voltage (V) C, Capacitance (pF) CE V C C C 0V, C C C f = 1MHz + C + C C SHORTED GE ies ge gc , ce res gc oes ce gc Cres Coes Cies 200V 100 1000 -60 -40 -20 0 20 40 60 80 100 120 140 160 Total Switching Losses (mJ) A T , Junction Temperature (°C)J R = 15Ω; R = 0Ω V = 15V V = 150V I = 1000A I = 600A I = 300A G GE CC C C C

/G71/G65/G54/G48/G48/G71/G68/G50/G53/G83 6 www.irf.com 0 200 400 600 800 1000 1200 160 240 320 I , Collector Current (A) Total Switching Losses (mJ) C R = T = 125 C V = 150V V = 15V G J CC GE Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Reverse Bias SOA Fig. 13 - Typical Forward Voltage Drop vs. Instantaneous Forward Current Fig. 14 - Typical Stored Charge vs. dif/dt /G82/G71/G49/G61/G49/G53Ω/G59/G82/G71/G50/G32/G61/G32/G48/G32Ω 100 1000 FM FInstantaneous Forward Current - I (A) Forward Voltage Drop - V (V) T = 125°C T = 25°C J J 300 600 900 1200 1500 0 100 200 300 C CE I , Collector-to-Emitter Current (A) SAFE OPERATING AREA V , Collector-to-Emitter Voltage (V) A V = 20V T = 125°C V measured at terminal ( Peak Voltage ) GE J CE 4000 8000 12000 16000 20000 300 400 500 600 f RRQ - (nC) I = 1000A I = 600A I = 300A F F F di /dt - (A/µs) R J J V = 150V T = 125°C T = 25°C 17V

/G71/G65/G54/G48/G48/G71/G68/G50/G53/G83 www.irf.com 7 Fig. 15 - Typical Reverse Recovery vs. dif/dt Fig. 16 - Typical Recovery Current vs. dif/dt 280 300 320 340 360 300 400 500 600 f t - (ns)rr I = 1000A I = 600A I = 300A di /dt - (A/µs) F F F R J J V = 150V T = 125°C T = 25°C 100 120 300 400 500 600 fdi /dt - (A/µs) I - (A)IRRM I = 1000A I = 600A I = 300A F F F R J J V = 150V T = 125°C T = 25°C

/G71/G65/G54/G48/G48/G71/G68/G50/G53/G83 8 www.irf.com Fig. 17b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf ∫Vce ie dt 5% Vce Ic IpkVcc 10% Ic Vce t1 t2 DUT VOLTAGE AND CURRENT GATE VOLTAGE D.U.T. +Vg10% +Vg 90% Ic trtd(on) DIODE REVERSE RECOVERY ENERGY tx Eon = Erec = Vd id dt t4t3 DIODE RECOVERY WAVEFORMS Ic Vpk 10% Vcc Irr 10% Irr Vcc trr Qrr = trr tx id dt Fig. 17a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf Fig. 17c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr Fig. 17d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr /G86/G100/G32/G73/G99/G32/G100/G116 /G86/G99/G101/G32/G73/G99/G32/G100/G116 /G32/G73/G99/G32/G100/G116 t=5µsd(on)t tftr 90% td(off) 10% 90% 10%5% C IC Eon Eoff ts on offE = (E +E ) V Vge

/G71/G65/G54/G48/G48/G71/G68/G50/G53/G83 10 www.irf.com Case Outline — DUAL INT-A-PAK Notes: /G129Repetitive rating; VGE = 17V, pulse width limited by max. junction temperature. /G130See fig. 17 /G131For screws M6. /G132Pulse width 50µs; single shot. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information .08/02 x 6 [.236] M A X. x