GA500TD60U

GA500TD60U IRF | Alldatasheet

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VCES = 600V VCE (on) typ. = 1.9V @V GE = 15V, IC = 500A Parameter Typ. Max. Units R θJC Thermal Resistance, Junction-to-Case - IGBT — 0.08 R θJC Thermal Resistance, Junction-to-Case - Diode — 0.20 °C/W R θCS Thermal Resistance, Case-to-Sink - Module 0.1 — Mounting Torque, Case-to-Heatsink /G83 — 6.0 N m Mounting Torque, Case-to-Terminal 1, 2 & 3 /G83 — 5.0 Weight of Module 400 — g Thermal / Mechanical Characteristics Ultra-FastTM Speed IGBT Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Voltage 600 V IC @ TC = 25°C Continuous Collector Current 500 ICM Pulsed Collector Current/G81 1000 A ILM Peak Switching Current/G82 1000 IFM Peak Diode Forward Current 500 VGE Gate-to-Emitter Voltage ±20 V VISOL RMS Isolation Voltage, Any Terminal To Case, t = 1 min 2500 PD @ TC = 25°C Maximum Power Dissipation 1550 W PD @ TC = 85°C Maximum Power Dissipation 800 TJ Operating Junction Temperature Range -40 to +150 °C TSTG Storage Temperature Range -40 to +125  UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode  Very low conduction and switching losses  HEXFRED ™ antiparallel diodes with ultra- soft recovery  Industry standard package  UL approved Benefits  Increased operating efficiency  Direct mounting to heatsink  Performance optimized for power conversion: UPS, SMPS, Welding  Lower EMI, requires less snubbing  Generation 4 IGBT technology www.irf.com 1 PD - 50048D

2 www.irf.com Parameter Min. Typ. Max. Units Conditions Q g Total Gate Charge (turn-on) — 2100 3200 V CC = 400V Q ge Gate - Emitter Charge (turn-on) — 292 440 nC I C = 500A Q gc Gate - Collector Charge (turn-on) — 1050 1580 T J = 25°C td(on) Turn-On Delay Time — 1900 — R G1 = 15Ω, RG2 = 0Ω , tr Rise Time — 430 — ns I C = 500A td(off) Turn-Off Delay Time — 800 — V CC = 360V tf Fall Time — 190 — V GE = ±15V Eon Turn-On Switching Energy — 41 — mJ See Fig.17 through Fig.21 Eoff Turn-Off Switching Energy — 56 — Ets Total Switching Energy — 97 110 C ies Input Capacitance — 46800 — V GE = 0V C oes Output Capacitance — 2920 — pF V CC = 30V C res Reverse Transfer Capacitance — 600 — ƒ = 1 MHz trr Diode Reverse Recovery Time — 246 — ns I C = 500A Irr Diode Peak ReverseCurrent — 144 — A R G1 = 15Ω Q rr Diode Recovery Charge — 17655 — µC R G2 = 0Ω di(rec)M /dt Diode Peak Rate of Fall of Recovery — 1386 — A/µs V CC = 360V During tb di/dt=1300A/µs Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltage 600 — — V GE = 0V, IC = 1mA VCE(on) Collector-to-Emitter Voltage — 1.9 2.4 V GE = 15V, IC = 500A — 2.0 — V V GE = 15V, IC = 500A, TJ = 125°C VGE(th) Gate Threshold Voltage 3.0 — 6.0 I C = 3.0mA ∆VGE(th)/∆ TJ Temperature Coeff. of Threshold Voltage— -11 — mV/°C V CE = VGE , IC = 3.0mA gfe Forward Transconductance /G84 — 244 — S V CE = 25V, IC = 500A ICES Collector-to-Emitter Leaking Current — — 2.0 mA V GE = 0V, VCE = 600V ——2 0 V GE = 0V, VCE = 600V, TJ = 125°C VFM Diode Forward Voltage - Maximum — 4.0 — V I F = 500A, VGE = 0V — 4.1 — I F = 500A, VGE = 0V, TJ = 125°C IGES Gate-to-Emitter Leakage Current — — 250 nA V GE = ±20V Dynamic Characteristics - TJ = 125°C (unless otherwise specified) Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

www.irf.com 3 Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics 0.1 1 10 100 100 150 200 250 f, Frequency (KHz) LOAD CURRENT (A) For both: Duty cycle: 50% T = 125°C T = 90°C Gate drive as specified sink J Pow er Dissipation = W270 100 1000 V , Collector-to-Emitter Voltage (V) I , Collector-to-Emitter Current (A) CE C /G20 V = 15V 20µs PULSE WIDTH GE /G20T = 25 CJ o /G20T = 150 CJ o 100 1000 5 6 7 8 9 10 11 V , Gate-to-Emitter Voltage (V) I , Collector-to-Emitter Current (A) GE C /G20 V = 50V 5µs PULSE WIDTH CC /G20T = 25 CJ o /G20T = 150 CJ o 80µs 80µs 25VCE VCE = 60% Rated Square wave: 25 25

4 www.irf.com Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature Fig. 4 - Maximum Collector Current vs. Case Temperature -60 -40 -20 0 20 40 60 80 100 120 140 160 1.0 1.5 2.0 2.5 T , Junction Temperature ( C) V , Collector-to-Emitter Voltage(V) J ° CE /G20 V = 15V 80 us PULSE WIDTH GE /G20I = A125C /G20I = A250C /G20I = A500CIC = 500A 25 50 75 100 125 150 100 200 300 400 500 600 T , Case Temperature ( C) Maximum DC Collector Current(A) C ° 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 thJC D = 0.50 0.01 0.02 0.05 0.10 0.20 SINGLE PULSE (THERMAL RESPONSE ) Thermal Response (Z ) t , Rectangular Pulse Duration (sec ) A P DM Notes: 1. Duty factor D = t / t 2. Peak T = P x Z + T 1 2 J DM thJC C

www.irf.com 5 Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Junction Temperature 0 10 20 30 40 50 100 120 140 160 180 200 R , Gate Resistance (Ohm) Total Switching Losses (mJ) G /G20 V = 360V V = 15V T = 125 C I = 250A CC GE J C ( Ω ) -60 -40 -20 0 20 40 60 80 100 120 140 160 100 1000 T , Junction Temperature ( C ) Total Switching Losses (mJ) J ° /G20 R = Ohm V = 15V V = 360V G GE CC /G20I = A500C /G20I = A250C /G20I = A125C R G1 =15Ω ;RG2 = 0 Ω 0 400 800 1200 1600 2000 2400 Q , Total Gate Charge (nC) V , Gate-to-Emitter Voltage (V) G GE /G20 V = 400V I = 500A CC C 500A IC = 500A 1 10 100 20000 40000 60000 80000 100000 V , Collector-to-Emitter Voltage (V) C, Capacitance (pF) CE /G20 V C C C 0V, C C C f = 1MHz + C + C C SHORTED GE ies ge gc , ce res gc oes ce gc /G20C res /G20C oes /G20C ies

6 www.irf.com Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Reverse Bias SOA Fig. 13 - Typical Forward Voltage Drop vs. Instantaneous Forward Current Fig. 14 - Typical Stored Charge vs. dif/dt IC , Collector-to-Emitter Current ( A ) Q RR - ( nC) 0 200 400 600 800 1000 100 150 200 250 I , Collector-to-emitter Current (A) Total Switching Losses (mJ) C /G20 R = Ohm T = 125 C V = 360V V = 15V G J CC GE R G1 =15Ω ;RG2 = 0 Ω 200 400 600 800 1000 1200 1400 0 100 200 300 400 500 600 700 CE SAFE OPERATING AREA V , Collector-to-Emitter Voltage (V ) A V = 20V T = 125°C V measured at terminal (Peak Voltage) GE J CE dif/dt - (A/µs) Instantaneous Forward Current - IF ( A ) 100 1000 0.0 2.0 4.0 6.0 FM Forward Voltage Drop - V (V) T = 125°C T = 25°C J J 10000 20000 30000 500 1000 1500 2000 I = 1000AF I = 500AF I = 250AF R J J V = 360V T = 125°C T = 25°C

www.irf.com 7 Fig. 15 - Typical Reverse Recovery vs. dif/dt Fig. 16 - Typical Recovery Current vs. dif/dt trr - ( ns ) IRRM - ( A ) dif/dt - (A/µs)dif/dt - (A/µs) 100 200 300 400 500 1000 1500 2000 I = 1000AF I = 500AF I = 250AF R J J V = 360V T = 125°C T = 25°C 100 150 200 250 500 1000 1500 2000 I = 1000AF I = 500AF I = 250AF R J J V = 360V T = 125°C T = 25°C

8 www.irf.com Ic Vce t1 t2 90% Ic10% Vce td(off) tf Ic 5% Ic t1+5µS Vce ic dt 90% Vge +Vge ∫Eoff = Fig. 18 - Test Waveforms for Circuit of Fig. 17, Defining Eoff, td(off), tf ∫Vce ie dt 5% Vce Ic IpkVcc 10% Ic Vce t1 t2 DUT VOLTAGE AND CURRENT GATE VOLTAGE D.U.T. +Vg10% +Vg 90% Ic trtd(on) DIODE REVERSE RECOVERY ENERGY tx Eon = Erec = Vd id dt t4t3 DIODE RECOVERY W AVEFORMS Ic Vpk 10% Vcc Irr 10% Irr Vcc trr Qr r = trr tx id dt Fig. 17 - Test Circuit for Measurement of ILM , Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf Fig. 19 - Test Waveforms for Circuit of Fig. 17, Defining Eon, td(on), tr Fig. 20 - Test Waveforms for Circuit of Fig. 17, Defining Erec, trr, Qrr, Irr Vd Ic dt Vce Ic dt Ic dt Vce Ic dt

Figure 21. Macro Waveforms for Figure 17's Test Circuit Figure 22. Clamped Inductive Load Test CircuitFigure 23. Pulsed Collector Current

4 X IC @25°C

10 www.irf.com Case Outline — DUAL INT-A-PAK Notes: /G81Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. /G82See fig. 17 /G83For screws M6. /G84Pulse width 80µs; single shot. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.05/02 104.50 103.50 [ 4.114 4.075] 5.50 4.50 .217 .177] 1 238 8.00 6.60 [ .315 .260] 24.00 23.00 .945 .906] 28.60 27.40 1.126 1.079]2X 93.30 92.70 3.673 3.650] 107.30 106.30 [ 4.224 4.185] 15.59 14.39 [ .614 .567] 6.60 5.40 .260 .213]4X 48.50 47.50 [ 1.909 1.870] 48.30 47.70 1.902 1.878] 3X M6 8 [.314] MAX. 4X Ø 6.80 6.20 [ .267 .244 0.15 [.0059] CONVEX 59.50 58.50 [ 2.343 2.303] 62.70 61.70 2.468 2.429] 31.00 29.60 1.220 1.165] 2. C O NTRO LLING DIM ENSIO N: M ILLIM ETER. 1. ALL DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES]. NOT ES : 4X FAS TON TAB (110)