GA400TD25S

GA400TD25S IRF | Alldatasheet

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"HALF-BRIDGE" IGBT DUAL INT-A-PAK FeaturesFeaturesFeaturesFeaturesFeatures VCES = 250V VCE (on) typ. = 1.3V @V GE = 15V, IC = 400A Parameter Typ. Max. Units R θJC Thermal Resistance, Junction-to-Case - IGBT — 0.09 R θJC Thermal Resistance, Junction-to-Case - Diode — 0.20 °C/W R θCS Thermal Resistance, Case-to-Sink - Module 0.1 — Mounting Torque, Case-to-Heatsink /G83 — 6.0 N m Mounting Torque, Case-to-Terminal 1, 2 & 3/G83 — 5.0 Weight of Module 400 — g Thermal / Mechanical Characteristics Standard Speed IGBT Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Voltage 250 V IC @ TC = 25°C Continuous Collector Current 400 ICM Pulsed Collector Current/G81 800 A ILM Peak Switching Current/G82 800 IFM Peak Diode Forward Current 800 VGE Gate-to-Emitter Voltage ±20 V VISOL RMS Isolation Voltage, Any Terminal To Case, t = 1 min 2500 PD @ TC = 25°C Maximum Power Dissipation 1350 W PD @ TC = 85°C Maximum Power Dissipation 700 TJ Operating Junction Temperature Range -40 to +150 °C TSTG Storage Temperature Range -40 to +125  Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHz  Very low conduction and switching losses  HEXFRED ™ antiparallel diodes with ultra- soft recovery  Industry standard package  UL approved Benefits  Increased operating efficiency  Direct mounting to heatsink  Performance optimized for power conversion: UPS, SMPS, Welding  Lower EMI, requires less snubbing  Generation 4 IGBT technology www.irf.com 1 PD -50051D

2 www.irf.com Parameter Min. Typ. Max. Units Conditions Q g Total Gate Charge (turn-on) — 1600 2400 V CC = 200V Q ge Gate - Emitter Charge (turn-on) — 232 348 nC I C = 440A Q gc Gate - Collector Charge (turn-on) — 528 792 T J = 25°C td(on) Turn-On Delay Time — 1250 — R G1 = 15Ω , RG2 = 0Ω , tr Rise Time — 365 — ns I C = 400A td(off) Turn-Off Delay Time — 841 — V CC = 150V tf Fall Time — 792 — V GE = ±15V Eon Turn-On Switching Energy — 6.0 — mJ See Fig.17 through Fig.21 Eoff Turn-Off Switching Energy — 38 — Ets Total Switching Energy — 45 52 C ies Input Capacitance — 36000 — V GE = 0V Coes Output Capacitance — 4080 — pF V CC = 30V C res Reverse Transfer Capacitance — 800 — ƒ = 1 MHz trr Diode Reverse Recovery Time — 229 — ns I C = 400A Irr Diode Peak ReverseCurrent — 71 — A R G1 = 15Ω Q rr Diode Recovery Charge — 8154 — nC R G2 = 0Ω di(rec)M /dt Diode Peak Rate of Fall of Recovery — 911 — A/µs V CC = 150V During tb di/dt»1400A/µs Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltage 250 — — V GE = 0V, IC = 1mA VCE(on) Collector-to-Emitter Voltage — 1.3 1.6 V GE = 15V, IC = 400A — 1.3 — V V GE = 15V, IC = 400A, TJ = 125°C VGE(th) Gate Threshold Voltage 3.0 — 6.0 I C = 3.0mA ∆VGE(th)/∆ TJ Temperature Coeff. of Threshold Voltage — -11 — mV/°C V CE = VGE , IC = 2.5mA gfe Forward Transconductance/G84 — 371 — S V CE = 25V, IC = 400A ICES Collector-to-Emitter Leaking Current — — 0.50 mA V GE = 0V, VCE = 250V ——2 0 V GE = 0V, VCE = 250V, TJ = 125°C VFM Diode Forward Voltage - Maximum — 1.7 2.2 V I F = 500A, VGE = 0V — 1.7 — I F = 500A, VGE = 0V, TJ = 125°C IGES Gate-to-Emitter Leakage Current — — 500 nA V GE = ±20V Dynamic Characteristics - TJ = 125°C (unless otherwise specified) Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

www.irf.com 3 100 1000 5 6 7 8 V , Gate-to-Emitter Voltage (V) I , Collector-to-Emitter Current (A) GE C /G20 V = 50V 5µs PULSE WIDTH CC /G20T = 25 CJ o /G20T = 150 CJ o 100 1000 1.0 1.5 2.0 V , Collector-to-Emitter Voltage (V) I , Collector-to-Emitter Current (A) CE C /G20 V = 15V 20µs PULSE WIDTH GE /G20T = 25 CJ o /G20T = 150 CJ o Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics 80µs 80µs 25VCE Load Current ( A ) 100 200 300 0.1 1 10 100 f, Frequenc y (kHz ) A 60% of rated voltage Ideal diodes Square wave: Duty cycle: 50% T = 125°C T = 90°C Gate drive as specified sink J Power Dissipation =184 W 125°C 125°C

4 www.irf.com Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature Fig. 4 - Maximum Collector Current vs. Case Temperature -60 -40 -20 0 20 40 60 80 100 120 140 160 1.0 1.5 2.0 T , Junction Temperature ( C) V , Collector-to-Emitter Voltage(V) J ° CE /G20 V = 15V 80 us PULSE WIDTH GE /G20I = A200C /G20I = A400C /G20I = A800C 100 200 300 400 500 25 50 75 100 125 150 T , Case Temperature (°C)C A Maximum DC Collector Current ( A ) 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Rectang ular Pulse Duration (sec )1 thJC D = 0.50 0.01 0.02 0.05 0.10 0.20 SINGLE PULSE (THERMAL RESPONSE) A Thermal Response (Z ) P DM Notes: 1. Duty factor D = t / t 2. Peak T = P x Z + T 1 2 J DM thJC C

www.irf.com 5 0 400 800 1200 1600 Q , Total Gate Charge (nC) V , Gate-to-Emitter Voltage (V) G GE /G20 V = 400V I = 440A CC C -60 -40 -20 0 20 40 60 80 100 120 140 160 100 1000 T , Junction Temperature ( C ) Total Switching Losses (mJ) J ° /G20 R = Ohm V = 15V V = 150V G GE CC /G20I = A800C /G20I = A400C /G20I = A200C Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Junction Temperature 1 10 100 10000 20000 30000 40000 50000 60000 V , Collector-to-Emitter Voltage (V) C, Capacitance (pF) CE /G20 V C C C 0V, C C C f = 1MHz + C + C C SHORTED GE ies ge gc , ce res gc oes ce gc /G20C res /G20C oes /G20C ies 0 10 20 30 40 R , Gate Resistance (Ohm) Total Switching Losses (mJ) G /G20 V = 150V V = 15V T = 25 C I = 400A CC GE J C R G , Gate Resistance ( Ω ) VCC = 200V R G1 =15Ω ;RG2 = 0 Ω 125°C

6 www.irf.com 0 200 400 600 800 1000 100 I , Collector-to-emitter Current (A) Total Switching Losses (mJ) C /G20 R = Ohm T = 150 C V = 150V V = 15V G J CC GE Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Reverse Bias SOA Fig. 13 - Typical Forward Voltage Drop vs. Instantaneous Forward Current Fig. 14 - Typical Stored Charge vs. dif/dt IC , Collector-to-Emitter Current ( A ) Instantaneous Forward Current - IF ( A ) Q RR - ( nC) R G1 =15Ω ;RG2 = 0 Ω 200 400 600 800 1000 0 100 200 300 CE GE SAFE OPERATING AREA V , Collector-to-Emitter Voltage (V ) A V = 20V T = 125°C V measured at terminal (Peak Voltage) GE J CE 100 1000 FM A T = 125°C T = 25°C J J Forward Vol tage Drop - V (V) 2000 4000 6000 8000 10000 12000 400 500 600 700 800 900 f A I = 800A I = 400A I = 200A F F F di /dt - (A/µ s) R J J V = 150V T = 125°C T = 25°C 125°C

www.irf.com 7 100 200 300 400 500 600 700 800 900 fdi /dt - (A/µ s) A I = 800A I = 400A I = 200A R J J V = 150V T = 125°C T = 25°C F F F Fig. 15 - Typical Reverse Recovery vs. dif/dt Fig. 16 - Typical Recovery Current vs. dif/dt trr - ( ns ) IRRM - ( A ) 100 400 500 600 700 800 900 f A I = 800A I = 400A I = 200A R J J F F F di /dt - (A/µ s) V = 150V T = 125°C T = 25°C

8 www.irf.com Ic Vce t1 t2 90% Ic10% Vce td(off) tf Ic 5% Ic t1+5µS Vce ic dt 90% Vge +Vge ∫Eoff = Fig. 18 - Test Waveforms for Circuit of Fig. 17, Defining Eoff, td(off), tf ∫Vce ie dt 5% Vce Ic IpkVcc 10% Ic Vce t1 t2 DUT VOLTAGE AND CURRENT GATE VOLTAGE D.U.T. +Vg10% +Vg 90% Ic trtd(on) DIODE REVERSE RECOVERY ENERGY tx Eon = Erec = Vd id dt t4t3 DIODE RECOVERY W AVEFORMS Ic Vpk 10% Vcc Irr 10% Irr Vcc trr Qr r = trr tx id dt Fig. 17 - Test Circuit for Measurement of ILM , Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf Fig. 19 - Test Waveforms for Circuit of Fig. 17, Defining Eon, td(on), tr Fig. 20 - Test Waveforms for Circuit of Fig. 17, Defining Erec, trr, Qrr, Irr Vd Ic dt Vce Ic dt Ic dt Vce Ic dt

www.irf.com 9 Vg GATE SIGNAL DEVICE UNDER TEST CURRENT D. U. T. VOLTAGE IN D.U.T. CURRENT IN D1 t0 t1 t2 Figure 22./G20 /G50/G75/G6C/G73/G65/G64/G20 /G43/G6F/G6C/G6C/G65/G63/G74/G6F/G72/G20 /G43/G75/G72/G72/G65/G6E/G74 /G54/G65/G73/G74/G20 /G43/G69/G72/G63/G75/G69/G74 R L= 150V

4 X IC @25°C

Figure 21./G20 /G4D/G61/G63/G72/G6F/G20 /G57/G61/G76/G65/G66/G6F/G72/G6D/G73/G20 /G66/G6F/G72/G20/G46/G69/G67/G75/G72/G65/G20 /G31/G37/G27/G73/G20/G54/G65/G73/G74/G20 /G43/G69/G72/G63/G75/G69/G74

10 www.irf.com Notes: /G81Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. /G82See fig. 17 /G83For screws M6. /G84Pulse width 80µs; single shot. Case Outline — DUAL INT-A-PAK Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.05/02 104.50 103.50 [ 4.114 4.075] 5.50 4.50 .217 .177] 1 238 8.00 6.60 [ .315 .260] 24.00 23.00 .945 .906] 28.60 27.40 1.126 1.079]2X 93.30 92.70 3.673 3.650] 107.30 106.30 4.224 4.185] 15.59 14.39 .614 .567] 6.60 5.40 .260 .213]4X 48.50 47.50 [ 1.909 1.870] 48.30 47.70 1.902 1.878] 3X M6 8 [.314] MAX. 4X Ø 6.80 6.20 [ .267 .244] 0.15 [.0059] CONVEX 59.50 58.50 [ 2.343 2.303] 62.70 61.70 2.468 2.429] 31.00 29.60 1.220 1.165] 2. CONT ROLLING DIMENS ION: MILLIMET ER. 1. A LL DIMENSIO NS A RE SHOW N IN MILLIM ETERS [INC HES]. NOT ES: 4X FAS TON TA B (110)