GA300TD60U

GA300TD60U IRF | Alldatasheet

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VCES = 600V VCE (on) typ. = 1.80V @V GE = 15V, IC = 300A Parameter Typ. Max. Units R θJC Thermal Resistance, Junction-to-Case - IGBT — 0.14 R θJC Thermal Resistance, Junction-to-Case - Diode — 0.20 °C/W R θCS Thermal Resistance, Case-to-Sink - Module 0.1 — Mounting Torque, Case-to-Heatsink /G83 — 6.0 N m Mounting Torque, Case-to-Terminal 1, 2 & 3/G83 — 5.0 Weight of Module 400 — g Thermal / Mechanical Characteristics Ultra-FastTM Speed IGBT Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Voltage 600 V IC @ TC = 25°C Continuous Collector Current 300 ICM Pulsed Collector Current 600 A ILM Peak Switching Current‚ 600 IFM Peak Diode Forward Current 600 VGE Gate-to-Emitter Voltage ±20 V VISOL RMS Isolation Voltage, Any Terminal To Case, t = 1 min 2500 PD @ TC = 25°C Maximum Power Dissipation 880 W PD @ TC = 85°C Maximum Power Dissipation 460 TJ Operating Junction Temperature Range -40 to +150 °C TSTG Storage Temperature Range -40 to +125  UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode  Very low conduction and switching losses  HEXFRED ™ antiparallel diodes with ultra- soft recovery  Industry standard package  UL approved Benefits  Increased operating efficiency  Direct mounting to heatsink  Performance optimized for power conversion: UPS, SMPS, Welding  Lower EMI, requires less snubbing  Generation 4 IGBT technology www.irf.com 1 PD -50057E

2 www.irf.com Parameter Min. Typ. Max. Units Conditions Q g Total Gate Charge (turn-on) — 1249 1873 V CC = 400V Q ge Gate - Emitter Charge (turn-on) — 173 260 nC I C = 187A Q gc Gate - Collector Charge (turn-on) — 423 635 T J = 25°C td(on) Turn-On Delay Time — 645 — R G1 = 27Ω , RG2 = 0Ω , tr Rise Time — 282 — ns I C = 300A td(off) Turn-Off Delay Time — 418 — V CC = 360V tf Fall Time — 220 — V GE = ±15V Eon Turn-On Switching Energy — 22 — mJ See Fig.17 through Fig.19 Eoff Turn-Off Switching Energy — 25 — Ets Total Switching Energy — 47 60 C ies Input Capacitance — 27755 — V GE = 0V C oes Output Capacitance — 1735 — pF V CC = 30V C res Reverse Transfer Capacitance — 361 — ƒ = 1 MHz trr Diode Reverse Recovery Time — 200 — ns I C = 300A Irr Diode Peak ReverseCurrent — 128 — A R G1 = 27Ω Q rr Diode Recovery Charge — 12771 — nC R G2 = 0Ω di(rec)M /dt Diode Peak Rate of Fall of Recovery — 1691 — A/µs V CC = 360V During tb di/dt =1300A/µs Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltage 600 — — V GE = 0V, IC = 1mA VCE(on) Collector-to-Emitter Voltage — 1.8 2.3 V GE = 15V, IC = 300A — 1.9 — V V GE = 15V, IC = 300A, TJ = 125°C VGE(th) Gate Threshold Voltage 3.0 — 6.0 I C = 1.75mA ∆VGE(th)/∆ TJ Temperature Coeff. of Threshold Voltage— -11 — mV/°C V CE = VGE , IC = 1.75mA gfe Forward Transconductance „ — 269 — S V CE = 25V, IC = 300A ICES Collector-to-Emitter Leaking Current — — 1.0 mA V GE = 0V, VCE = 600V ——1 0 V GE = 0V, VCE = 600V, TJ = 125°C VFM Diode Forward Voltage - Maximum — 3.3 — V I F = 300A, VGE = 0V — 3.2 — I F = 300A, VGE = 0V, TJ = 125°C IGES Gate-to-Emitter Leakage Current — — 400 nA V GE = ±20V Dynamic Characteristics - TJ = 125°C (unless otherwise specified) Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

www.irf.com 3 0.1 1 10 100 120 160 200 f, Frequency (KHz) LOAD CURRENT (A) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics For both: Duty cycle: 50% T = 125°C T = 90°C Gate drive as specified sink J Power Dissipation = W 60% of rated voltage I Ideal diodes Square wave: 150 100 1000 V , Collector-to-Emitter Voltage (V) I , Collector-to-Emitter Current (A) CE C /G20 V = 15V 80µs PULSE WIDTH GE /G20T = 25 CJ ° /G20T = 125 CJ ° 100 1000 V , Gate-to-Emitter Voltage (V) I , Collector-to-Emitter Current (A) GE C /G20 V = 25V 80µs PULSE WIDTH CE /G20T = 25 CJ ° /G20T = 125 CJ °

4 www.irf.com Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature Fig. 4 - Maximum Collector Current vs. Case Temperature -60 -40 -20 0 20 40 60 80 100 120 140 160 1.0 2.0 3.0 T , Junction Temperature ( C) V , Collector-to-Emitter Voltage(V) J ° CE /G20 V = 15V 80 us PULSE WIDTH GE /G20I = A600C /G20I = A300C /G20I = A150C 25 50 75 100 125 150 100 200 300 400 T , Case Temperature ( C) Maximum DC Collector Current(A) C ° 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 thJC t , Rectangular Pulse Duration (Seconds ) D = 0.50 S ing le Pulse (Thermal Resistance ) 0.01 0.02 0.05 0.10 0.20 Thermal Impedance - Z P DM Notes: 1. Duty factor D = t / t 2. Peak T = P x Z + T 1 2 J DM thJC C

www.irf.com 5 Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Junction Temperature -60 -40 -20 0 20 40 60 80 100 120 140 160 100 1000 T , Junction Temperature ( C ) Total Switching Losses (mJ) J ° /G20 R = Ohm V = 15V V = 360V G GE CC /G20I = A600C /G20I = A300C /G20I = A150C R G1 =27Ω ;RG2 = 0 Ω 0 200 400 600 800 1000 1200 1400 Q , Total Gate Charge (nC) V , Gate-to-Emitter Voltage (V) G GE /G20 V = 400V I = 187A CC C 1 10 100 10000 20000 30000 40000 50000 V , Collector-to-Emitter Voltage (V) C, Capacitance (pF) CE /G20 V C C C 0V, C C C f = 1MHz + C + C C SHORTED GE ies ge gc , ce res gc oes ce gc /G20C res /G20C oes /G20C ies 0 10 20 30 40 50 R , Gate Resistance (Ohm) Total Switching Losses (mJ) G /G20 V = 360V V = 15V T = 125 C I = 300A CC GE J C R G , Gate Resistance ( Ω ) 125°C

6 www.irf.com Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Reverse Bias SOA Fig. 13 - Typical Forward Voltage Drop vs. Instantaneous Forward Current Fig. 14 - Typical Stored Charge vs. dif/dt 0 100 200 300 400 500 600 100 120 I , Collector-to-emitter Current (A) Total Switching Losses (mJ) C /G20 R = Ohm T = 125 C V = 360V V = 15V G J CC GE R G1 =27Ω ;RG2 = 0 Ω 200 400 600 800 0 200 400 600 800 CE SAFE OPERATING AREA V = 20V T = 125°C GE J V , Collector-to-Emitter Voltage (V ) A IC , Collector-to-Emitter Current ( A ) VCE measured at terminal (Peak Voltage) 100 1000 FM FInstantaneous Forward Current - I (A) Forward Voltage Drop - V (V) T = 125°C T = 25°C J J 5000 10000 15000 20000 25000 500 1000 1500 2000 fdi /dt - (A/µs) RRQ - (nC) I = 600A I = 300A I = 150A F F F R J J V = 360V T = 125°C T = 25°C

www.irf.com 7 Fig. 15 - Typical Reverse Recovery vs. dif/dt Fig. 16 - Typical Recovery Current vs. dif/dt 100 150 200 250 300 500 1000 1500 2000 fdi /dt - (A/µs) t - (ns)rr I = 600A I = 150A I = 300A F F F R J J V = 360V T = 125°C T = 25°C 100 150 200 250 500 1000 1500 2000 fdi /dt - (A/µ s) I - (A)IR RM I = 600A I = 300A I = 150AF F F R J J V = 360V T = 125°C T = 25°C

8 www.irf.com Ic Vce t1 t2 90% Ic10% Vce td(off) tf Ic 5% Ic t1+5µS Vce ic dt 90% Vge +Vge ∫Eoff = Fig. 17b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf ∫Vce ie dt 5% Vce Ic IpkVcc 10% Ic Vce t1 t2 DUT VOLTAGE AND CURRENT GATE VOLTAGE D.U.T. +Vg10% +Vg 90% Ic trtd(on) DIODE REVERSE RECOVERY ENERGY tx Eon = Erec = Vd id dt t4t3 DIODE RECOVERY W AVEFORMS Ic Vpk 10% Vcc Irr 10% Irr Vcc trr Qr r = trr tx id dt Fig. 17a - Test Circuit for Measurement of ILM , Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf Fig. 17c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr Fig. 17d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr Vd Ic dt Vce Ic dt Ic dt Vce Ic dt

Figure 18. Clamped Inductive Load Test CircuitFigure 19. Pulsed Collector Current

4 X IC @25°C

10 www.irf.com Case Outline — DUAL INT-A-PAK Notes: /G81Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. /G82See fig. 17 /G83For screws M6. /G84Pulse width 80µs; single shot. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.05/02 104.50 103.50 [ 4.114 4.075] 5.50 4.50 .217 .177] 1 238 8.00 6.60 [ .315 .260] 24.00 23.00 .945 .906] 28.60 27.40 1.126 1.079]2X 93.30 92.70 3.673 3.650] 107.30 106.30 4.224 4.185] 15.59 14.39 .614 .567] 6.60 5.40 .260 .213]4X 48.50 47.50 [ 1.909 1.870] 48.30 47.70 1.902 1.878] 3X M6 8 [.314] MAX. 4X Ø 6.80 6.20 [ .267 .244] 0.15 [.0059] CONVEX 59.50 58.50 [ 2.343 2.303] 62.70 61.70 2.468 2.429] 31.00 29.60 1.220 1.165] 2. CONT ROLLING DIMENS ION: MILLIMETER. 1. ALL DIMENS IONS ARE SHOWN IN MILLIMET ERS [INCHES]. NOT ES: 4X FAS TON TAB (110)