GA250TD120U

GA250TD120U IRF | Alldatasheet

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Parameter Typ. Max. Units R θJC Thermal Resistance, Junction-to-Case - IGBT — 0.10 R θJC Thermal Resistance, Junction-to-Case - Diode — 0.20 °C/W R θCS Thermal Resistance, Case-to-Sink - Module 0.1 — Mounting Torque, Case-to-Heatsink — 4.0 N m Mounting Torque, Case-to-Terminal 1, 2 & 3/G83 — 3.0 Weight of Module 400 — g Thermal / Mechanical Characteristics Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Voltage 1200 V IC @ TC = 25°C Continuous Collector Current 250 ICM Pulsed Collector Current/G81 500 A ILM Peak Switching Current/G82 500 IFM Peak Diode Forward Current 500 VGE Gate-to-Emitter Voltage ±20 V VISOL RMS Isolation Voltage, Any Terminal To Case, t = 1 min 2500 PD @ TC = 25°C Maximum Power Dissipation 1250 W PD @ TC = 85°C Maximum Power Dissipation 650 TJ Operating Junction Temperature Range -40 to +150 °C TSTG Storage Temperature Range -40 to +125  Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHz  Very low conduction and switching losses  HEXFRED ™ antiparallel diodes with ultra- soft recovery  Industry standard package  UL approved Benefits  Increased operating efficiency  Direct mounting to heatsink  Performance optimized for power conversion: UPS, SMPS, Welding  Lower EMI, requires less snubbing PD - 50054A  Generation 4 IGBT technology www.irf.com 1 Ultra-FastTM Speed IGBT VCES = 1200V VCE (on) typ. = 2.4V @V GE = 15V, IC = 250A VCES = 1200V

2 www.irf.com Parameter Min. Typ. Max. Units Conditions Q g Total Gate Charge (turn-on) — 1979 2968 V CC = 400V, VGE = 15V Q ge Gate - Emitter Charge (turn-on) — 334 501 nC I C = 297A Q gc Gate - Collector Charge (turn-on) — 655 983 T J = 25°C td(on) Turn-On Delay Time — 731 — R G1 = 15Ω , RG2 = 0Ω tr Rise Time — 227 — ns I C = 250A td(off) Turn-Off Delay Time — 653 — V CC = 720V tf Fall Time — 343 — V GE = ±15V Eon Turn-On Switching Energy — 54 — mJ See Fig.17 through Fig.21 Eoff Turn-Off Switching Energy — 54 — Ets Total Switching Energy — 108 162 C ies Input Capacitance — 44517 — V GE = 0V Coes Output Capacitance — 1979 — pF V CC = 30V C res Reverse Transfer Capacitance — 383 — ƒ = 1 MHz trr Diode Reverse Recovery Time — 214 — ns I C = 250A Irr Diode Peak ReverseCurrent — 155 — A R G1 = 15 Q rr Diode Recovery Charge — 16540 — nC R G2 = 0 di(rec)M /dt Diode Peak Rate of Fall of Recovery — 1970 — A/µs V CC = 720V During tb di/dt=1368A/µs Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltage1200 — — V GE = 0V, IC = 1mA VCE(on) Collector-to-Emitter Voltage — 2.4 2.9 V GE = 15V, IC = 250A — 2.1 — V V GE = 15V, IC = 250A, TJ = 125°C VGE(th) Gate Threshold Voltage 3.0 — 6.0 V CE = 6V, IC = 3 mA ∆ VGE(th)/∆ TJ Temperature Coeff. of Threshold Voltage — -11 — mV/°C V CE = 6V, IC = 3mA gfe Forward Transconductance /G84 — 323 — S V CE = 25V, IC = 250A ICES Collector-to-Emitter Leaking Current — — 2.0 mA V GE = 0V, VCE = 1200V ——2 0 V GE = 0V, VCE = 1200V, TJ = 125°C VFM Diode Forward Voltage - Maximum — 3.0 4.0 V I F = 250A, VGE = 0V — 2.9 — I F = 250A, VGE = 0V, TJ = 125°C IGES Gate-to-Emitter Leakage Current — — 500 nA V GE = ±20V Dynamic Characteristics - TJ = 125°C (unless otherwise specified) Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Details of note /G81 through /G84 are on the last page Ω Ω

www.irf.com 3 Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics 100 1000 V , Collector-to-Emitter Voltage (V) I , Collector-to-Emitter Current (A) CE C /G20 V = 15V 80µs PULSE WIDTH GE /G20T = 125 CJ ° /G20T = 25 CJ ° 100 1000 5.0 6.0 7.0 8.0 V , Gate-to-Emitter Voltage (V) I , Collector-to-Emitter Current (A) GE C /G20 V = 25V 80µs PULSE WIDTH CE /G20T = 25 CJ ° /G20T = 125 CJ ° 0.1 1 10 100 100 120 140 f, Frequency (KHz) LOAD CURRENT (A) For both: Duty cycle: 50% T = 125 °C T = 90°C Gate drive as specified sink J Power Di ssi pat i on = W 60% of rated voltage I Ideal diodes Square wave: 175

4 www.irf.com Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature Fig. 4 - Maximum Collector Current vs. Case Temperature 25 50 75 100 125 150 100 150 200 250 300 T , Case Temperature ( C) Maximum DC Collector Current(A) C ° -60 -40 -20 0 20 40 60 80 100 120 140 160 1.0 2.0 3.0 4.0 T , Junction Temperature ( C) V , Collector-to-Emitter Voltage(V) J ° CE /G20 V = 15V 80 us PULSE WIDTH GE /G20I = A500C /G20I = A250C /G20I = A125C 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 thJC D = 0.50 0.01 0.02 0.05 0.10 0.20 SINGLE PULSE (THERMAL RESPONSE) Thermal Response (Z ) t , Rectangular Pulse Duration (sec) A P DM Notes: 1. Duty factor D = t / t 2. Peak T = P x Z + T J DM thJC C

www.irf.com 5 Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Junction Temperature R G , Gate Resistance ( Ω ) 0 500 1000 1500 2000 2500 Q , Total Gate Charge (nC) V , Gate-to-Emitter Voltage (V) G GE /G20 V = 400V I = 297A CC C 0 10 20 30 40 50 100 120 140 160 180 200 R , Gate Resistance (Ohm) Total Switching Losses (mJ) G /G20 V = 720V V = 15V T = 25 C I = 250A CC GE J C 15Ω 125 1 10 100 20000 40000 60000 80000 V , Collector-to-Emitter Voltage (V) C, Capacitance (pF) CE /G20 V C C C 0V, C C C f = 1MHz + C + C C SHORTED GE ies ge gc , ce res gc oes ce gc /G20C ies /G20C oes /G20C res -60 -40 -20 0 20 40 60 80 100 120 140 160 100 1000 T , Junction Temperature ( C ) Total Switching Losses (mJ) J ° /G20 R = 15Ohm V = 15V V = 720V G GE CC /G20I = A500C /G20I = A250C /G20I = A125C R G1 =15Ω ;RG2 = 0 Ω ( Ω ) ( ° C)

6 www.irf.com Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Reverse Bias SOA Fig. 13 - Typical Forward Voltage Drop vs. Instantaneous Forward Current Fig. 14 - Typical Stored Charge vs. dif/dt IC , Collector Current ( A )Q RR - ( nC) 5000 10000 15000 20000 25000 500 800 1100 1400 1700 2000 fdi /dt - (A/µs) RRQ - (nC) I = 500A I = 250A I = 125A F F F R J J V = 720V T = 125°C T = 25°C 0 200 400 600 800 1000 1200 1400 100 200 300 400 500 600 700 /G20 V = 20V T = 125 C V measured at terminal(Peak Voltage) GE J CE o /G20 SAFE OPERATING AREA V , Collector-to-Emitter Voltage (V) I , Collector Current (A) CE C 100 1000 1.0 2.0 3.0 4.0 FM FInstantaneous Forward Current - I (A) Forward Volta ge Drop - V (V ) T = 125°C T =25°C J J 0 100 200 300 400 500 100 150 200 250 I , Collector Current (A) Total Switching Losses (mJ) C /G20 R = 15Ohm T = 150 C V = 720V V = 15V G J CC GE R G1 =15Ω ;RG2 = 0 Ω 125

www.irf.com 7 Fig. 15 - Typical Reverse Recovery vs. dif/dt Fig. 16 - Typical Recovery Current vs. dif/dt trr - ( ns ) IRRM - ( A ) 100 200 300 400 500 800 1100 1400 1700 2000 fdi /dt - (A/µs) t - (ns)rr I = 500A I = 250A I = 125AF F F R J J V = 720V T = 125 °C T = 25°C 100 150 200 250 500 800 1100 1400 1700 2000 fdi /dt - (A/µs) I - (A)I RRM I = 500A I = 250A I = 125A F F F R J J V = 720V T = 125 °C T = 25°C

8 www.irf.com Ic Vce t1 t2 90% Ic10% Vce td(off) tf Ic 5% Ic t1+5µS Vce ic dt 90% Vge +Vge ∫Eoff = Fig. 18 - Test Waveforms for Circuit of Fig. 17, Defining Eoff, td(off), tf ∫Vce ie dt 5% Vce Ic IpkVcc 10% Ic Vce t1 t2 DUT VOLTAGE AND CURRENT GATE VOLTAGE D.U.T. +Vg10% +Vg 90% Ic trtd(on) DIODE REVERSE RECOVERY ENERGY tx Eon = Erec = Vd id dt t4t3 DIODE RECOVERY W AVEFORMS Ic Vpk 10% Vcc Irr 10% Irr Vcc trr Qr r = trr tx id dt Fig. 17 - Test Circuit for Measurement of ILM , Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf Fig. 19 - Test Waveforms for Circuit of Fig. 17, Defining Eon, td(on), tr Fig. 20 - Test Waveforms for Circuit of Fig. 17, Defining Erec, trr, Qrr, Irr Vd Ic dt Vce Ic dt Ic dt Vce Ic dt

Figure 23. Pulsed Collector Current

4 X IC @25°C

Figure 21. Macro Waveforms for Figure 17's Test Circuit Figure 22. Clamped Inductive Load Test Circuit

10 www.irf.com Case Outline — DOUBLE INT-A-PAK Notes: /G81Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. /G82See fig. 17 /G83For screws M5x0.8 /G84Pulse width 80µs; single shot. Dimensions are shown in millimeters (inches) IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN: 16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 4/00