GA200 MICROSEMI | Alldatasheet

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Nanosecond Switching, Planar GA201_ GB201 GA2Z01A GB201A FEATURES DESCRIPTION ‘© Rise Time; 10n3 ‘Tne Microsemi! Nanosecona Inynstor Switch combines the tum-on speed of logic level ® Delay Time: 10ns transistors with the high current switching capability inherent in SCRs. With this device ‘© Recovery Time: 0.5 us engineers can now design circuits capable of switching pulse currents of 1A in ess than ‘© Pulse Current: to 100A 10ns or up to 30A in less than 20ns. * Turmron with 200s 10mA Gale Fuse the GA/GB200 series is specially designed for use as switching elements in high speed, Jow-to-medium power radar pulse modulators. Other applications include switching elements for phased array radars, laser pulse drivers, harmonic waveform generators, line drivers and high currant replacements for avalanche transitore. For applications reauiring higher voltage levels, Microsemi has developed several “series string” circuits which allow the series con- nection of virtually an unlimited number of devices for voltages as high as 2000V with no significant decrease in speed. The circuits are described in Microsemi's Design Note #14. ABSOLUTE MAXIMUM RATINGS GA200 GA201 GB200 GB201 x2008 azo 82004 B201a Repetitive Peak Off-State Voltage, Vorw. 60V. 100V. 60V 100V Repetitive Peak On-State Current, lray up to 100A up to 100A DC. On-State Current, |, 70°C Ambient 200mA - 70°C Case 400mA 6A . Peak Gate Current, lau . 250mA 250mA Average Gate Current, lay, 25mA 5OmA Reverse Gate Current, lon 3mA mA Reverse Gate Voltage, Ven, 5Vv 5V Thermal Resistance. Kg ox ‘300°C/W Storage Temperature Range 65°C to +200°C Operating Temperature Range 65°C to +150°C MECHANICAL SPECIFICATIONS GA200 GA200A GA201 GA201A TO-18 . 6 - ° + ‘| Toyo ess [aes TT] PSST cxtmooe \\ WESSELS Ee wee cy sun [a7 mw —] aaa SPP wrcoe [naan [Ee] aon Max | ena aye et. (3 Tasos Postar GB200 GB200A GB201 GB201A TO-59 a 9 pee e tae 7 e- crt i cng Est er iY (elcoso=ts0 [aes | FD. oe w-pgnea anone~ fo] sro=763 | v4e6-19.38 |} fe] st8-300— PR het | TE a ST ies-ais | arose NOTE: Anode connected to cate. Microsemi Corp. Watertown 432 ‘he cove exper

ELECTRICAL SPECIFICATIONS (at 25°C unless noted) R200 GAMMA GRIM GRA 2 lg = 20mA, |= 1A Delay Time ‘ [= [a] fe = 30mA I = 1A ony ” 15 B ns | V> =60V, |, 1A) Rise Time GA200, 200A, GB200, 200A t, | = | 35 2 ns | Vg=60V, = 30a 0) Gate Trigger on Pulse Width tole [| — | 2} 6 |] os] 1g =10mA, = 1A Circuit Commutated Turn-off Time ty i ee _ GA200,201, GB200, 201 p= 1A by = 1A Reg = 1K Off-State Current "oem 20 TA | Vous = Rating, Rgy = 1K, we | 8 | Gate Trigger Current ler [| - [| » | wm] al Vp = 5V, Res = 10K ono ts ina Re = OTE — [ow oe [= restive Vp = SV. Rey = 1K, T= 25°C Notes: 1. 1g = 10mA; Pulse Test, Duty Cycle <I%. 2. Pulse test intended to guarantee reverse anode voltage capability for pulse commutation, Device should not be operated in the Switching Speed (Typical) Peak Current vs. Pulse Width (GA/CB200 Eories - CA200 Serio __. - _ 1000 1000 | —| Envny 2 | | =e | an wo B pq OUTYQvCLE = 05% Fa - — > Fd fe —oury cycle = oni Fa 5 .: —__S - | = lourvevete =a —w i 2 [bury evete = 05% a “x 2 “tee Soeeceseame A g ~

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| L Pervevctesin 1 zu FT 1 10 100 wa 1 10 100 1; — ANODE CURRENT (A) ‘te — PULSE WIDTH (xs) NOTES: 1. Vp — Rated Venu NOTES: 1. DATA BASED ON ON-STATE 2 Taase VOLTAGE GRAPH ATT ~ 150°C. 2 1g=20mA LOCKING VOLTAGE MAY BE = zone TYPICALLY FOR ALL APPLIED IMMEDIATELY AFTER ‘Tyres INDEPENDENT OF ANODE TERMINATION OF CURRENT cunneNT poise, 2.7, a 78

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Peak Current vs, Pulse Width Peak Current vs. Pulse Width . GB200 Series . GB200 Series F @ g | Fa 5 | | § 3 | | 3 2 too (RUT SvelE— 1m ¥ too FLLTYS¥eLE = 06%. |

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zg Po —SS, 2 SSS ourv'cvete o Brera S Q 1% & [purvevcte ste —] © ROE i w ike | $ 10 bury crete = 20%. $ to /UTY CYCLE TI E |oury cycte = soxs- E four cycte = sx i : \\ | BOTY EverE= se zu pl 2cr 1 10 00 fra 1 10 100 t, — PULSE WIDTH (us) 1, — PULSE WIDTH (8) NOTES: 1, DATA BASED ON ON-STATE NOTES: 1. DATA BASED ON ON-STATE VOLTAGE GRAPH AT T, = 150°C. VOLTAGE GRAPH AT T, = 150°C. BLOCKING VOLTAGE MAY BE LOCKING VOI TAGE MAY RE APPLIED IMMEDIATELY AFTER APPLIED IMMEDIATELY AFTER TERMINATION OF CURRENT TERMINATION OF CURRENT PULSE. PULSE. 2, Te=78C 21,2780 On-State Current vs. Voltage = Surge Rating Maximum GA/GB200 Series Fa 'A/ GB200 Series Fa Y £ z | NON-REETITIVE PEAK CURRENT PULSE 5 é i 10 ®@ 100 $e i i = § ¥ 3 Fa = @ Fs Fa | i = 24 Eo 6 i] i

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+ | i é | | 1 Fa i ' 2 al loa ——L a 1 Fc) 100 a r Rd 100 Vu — ON-STATE VOLTAGE (V) 4, — PULSE WIDTH (x8) NOTES: 1. BLOCKING VOLTAGE MAY NOT BE ‘APPLIED FOR .001 SEC. AFTER TERMINATION OF SURGE PULSE os — {AS JUNCTION TEMPERATURE 7 —= WILL EXCEED 150°C. _=§=—— a 2.T.=75C Buhl y i a1] "| HE —}

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