GA200TS60UX IRF | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 9
Technical content
Features
- Increased operating efficiency
- Direct mounting to heatsink
- Performance optimized for power conversion: UPS, SMPS, Welding
- Low EMI, requires less snubbing Benefits VCES = 600V VCE(on) typ. = 1.74V @ VGE = 15V, IC = 200A www.irf.com
2 www.irf.com TJ Operating Junction Temperature Range - 40 150 °C TSTG Storage Temperature Range - 40 125 RthJC Junction-to-Case IGBT 0.2 °C/ W Per Diode 0.4 RthCS Case-to-Sink Per Module 0.1 T Mounting torque Case to heatsink 6 Nm Case to terminal 1, 2, 3 5 Weight 200 g VBRCES Collector-to-Emitter Breakdown Voltage 600 V V GE = 0V, I C = 1mA VCE(on) Collector-to-Emitter Voltage 1.74 2.2 V GE = 15V, I C = 200A 1.79 2.25 V GE = 15V, I C = 200A, TJ = 125°C VGE(th) Gate Threshold Voltage 3 4.4 6 I C = 0.25mA ΔVGE(th)/ΔTJ Temperat. Coeff. of Threshold Voltage - 11 mV/°C V CE= V GE, I C = 0.25mA gfe Forward Transconductance 220 S V CE = 20V, I C = 200A ICES Collector-to-Emiter Leakage Current 0.014 1 mA V GE = 0V, V CE = 600V
10 V GE = 0V, V CE = 600V, T J = 125°C
VFM Diode Forward Voltage drop 4.2 6.0 V I C = 200A, V GE = 0V 4.4 6.2 I C = 200A, V GE = 0V, T J = 125°C IGES Gate-to-Emitter Leakage Current ± 250 nA V GE = ± 20V Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameters Min Typ Max Units Test Conditions Qg Total Gate Charge 900 nC I C = 200A Qge Gate-Emitter Charge 125 I C = 270A, VGE = 15V Qgc Gate-Collector Charge 306 td(on) Turn-On Delay Time 342 ns tr Rise Time 194 IC = 200A td(off) Turn-Off Delay Time 366 V CC = 360V tf Fall Time 213 VGE = ± 15V Eon Turn-On Switching Energy 5 mJ T J = 125°C Eoff Turn-Off Switching Energy 16 R G1 = 15Ω Ets Total Switching Energy 21 R G2 = 0Ω Cies Input Capacitance — 20068 — V GE = 0V Coes Output Capacitance — 1254 — pF V CC = 30V Cres Reverse Transfer Capacitance — 261 — ƒ = 1 MHz trr Diode Reverse Recovery Time — 179 — ns I C = 200A Irr Diode Peak ReverseCurrent — 120 — A V CC = 360V Qrr Diode Recovery Charge — 10714 — μC di/dt =1300A/μs di(rec)M/dt Diode Peak Rate of Fall of Recovery — 1922 — A/ μs During tb Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameters Min Typ Max Units Test Conditions Thermal- Mechanical Specifications Parameters Min Typ Max Units
www.irf.com Fig. 1 - Typical Load Current vs. Frequency (Load Current = I RMS of fundamental) Fig. 3 - Typical Transfer Characteristics 0.1 1 10 100 100 120 140 f, Frequency (KHz) For both: Duty cycle: 50% T = 125°C T = 90°C Gate drive as specified sink J Power Dissipation = W 60% of rated voltage I Ideal diodes Square wave: 120 Fig. 2 - Typical Output Characteristics VCE, Collector-to-Emitter Voltage (V) IC, Collector-to-Emitter Current (A) 100 1000 Tj = 25°C Tj = 125°C Vge = 15V 500µs Pulse Width 100 1000 Tj = 25°C Tj = 125°C Vge = 20V 500µs Pulse Width IC, Collector-to-Emitter Current (A) Load Current (A) VGE, Gate-to-Emitter Voltage (V)
4 www.irf.com Fig. 4 - Maximum Collector Current vs. Case Temperature 0 50 100 150 200 250 300 100 120 140 160 TC, Case Temperature (°C) Maximum DC Collector Current (A) Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature TJ , Junction Temperature (°C) VCE Collector-to-Emitter Voltage (V) 20 40 60 80 100 120 140 160 1.5 2.5 100A 200A 400A Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 1E-005 0.0001 0.001 0.01 0.1 1 10 0.001 0.01 0.1 0.20 0.10 D = 0.50 0.01 0.02 0.05 SINGLE PULSE ( THERMAL RESPONSE ) t1, Rectangular Pulse Duration (sec) Thermal Response (ZthJC )
www.irf.com Fig. 7 - Typical Gate Charge vs. Gate-to-Emitter Voltage 0 200 400 600 800 1000
20 V = 400V
I = 135A CC C QG , Total gate Charge (nC) VCE Gate-to-Emitter Voltage (V) Fig. 8 - Typ. Switching Losses vs. Gate Resistance 0 1 02 03 04 05 0 Vcc = 360V Tj = 125°C Vge = 15V Ic = 200A RG Gate Resistance (Ω) Total Switching Losses (mJ) Fig. 9 - Typ. Switching Losses vs. Collec- tor-to-Emitter Current IC, Collector-to-Emitter Current (A) Total Switching Losses (mJ) Fig. 10 - Reverse Bias SOA IC, Collector-to-Emitter Current (A) VCE, Collector-to-Emitter Voltage (V) 0 100 200 300 400 500 600 700 100 200 300 400 500 Vge = 20V SAFE OPERATING AREA 0 50 100 150 200 250 300 350 400 Vcc = 360V Tj = 125°C Vge = 15V Rg1 = 15Ω Rg2 = 0Ω
6 www.irf.com Fig. 11 - Typ. Forward Voltage Drop vs. Instantaneous Forward Current Forward Voltage Drop - VFM (V) Instantaneous Forward Current - IF (A) 100 1000 T = 25°C T = 125°C J J Fig. 12 - Typical Stored Charge vs. dI f / dt dIF/ dt (A/µs) QRR (nC) Fig. 13 - Typical Reverse Recovery vs. dI f /dt dIF/ dt (A/µs) tRR (ns) Fig. 14 - Typical Reverse Recovery vs. dI f /dt dIF/ dt (A/µs) I RRM (A) 500 1000 1500 2000 5000 10000 15000 20000 400A, 125°C 100A, 25°C 200A, 25°C 400A, 25°C 200A, 125°C 100A, 125°C 500 1000 1500 2000 5000 10000 15000 20000 400A, 125°C 100A, 25°C 200A, 25°C 400A, 25°C 200A, 125°C 100A, 125°C 500 1000 1500 2000 100 150 200 250 400A, 125°C 100A, 25°C 200A, 25°C 400A, 25°C 200A, 125°C 100A, 125°C
www.irf.com Ic Vce t1 t2 90% Ic10% Vce td(off) tf Ic 5% Ic t1+5µS Vce ic dt 90% Vge +Vge Eoff = Fig. 15b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, t d(off), t f Vce ie dt 5% Vce Ic IpkVcc 10% Ic Vce t1 t2 DUT VOLTAGE AND CURRENT GATE VOLTAGE D.U.T. +Vg10% +Vg 90% Ic trtd(on) DIODE REVERSE RECOVERY ENERGY tx Eon = Erec = Vd id dt t4t3 DIODE RECOVERY WAVEFORMS Ic Vpk 10% Vcc Irr 10% Irr Vcc trr Qrr = trr tx id dt Fig. 15a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf Fig. 15c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr Fig. 15d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr Vd Ic dt Vce Ic dt Ic dt Vce Ic dt
Figure 16. Clamped Inductive Load Test Circuit Figure 17. Pulsed Collector Current
4 X IC @25°C
www.irf.com Outline Table Dimensions in millimeters Electrical Diagram IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 03/06 Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site.