GA200TS60U IRF | Alldatasheet

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VCES = 600V VCE (on) typ. = 1.8V @V GE = 15V, IC = 200A Parameter Typ. Max. Units R θJC Thermal Resistance, Junction-to-Case - IGBT — 0.20 R θJC Thermal Resistance, Junction-to-Case - Diode — 0.35 °C/W R θCS Thermal Resistance, Case-to-Sink - Module 0.1 — Mounting Torque, Case-to-Heatsink — 4.0 N m Mounting Torque, Case-to-Terminal 1, 2 & 3ƒ — 3.0 Weight of Module 200 — g Thermal / Mechanical Characteristics Ultra-FastTM Speed IGBT Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Voltage 600 V IC @ TC = 25°C Continuous Collector Current 200 ICM Pulsed Collector Current 400 A ILM Peak Switching Current‚ 400 IFM Peak Diode Forward Current 400 VGE Gate-to-Emitter Voltage ±20 V VISOL RMS Isolation Voltage, Any Terminal To Case, t = 1 min 2500 PD @ TC = 25°C Maximum Power Dissipation 625 W PD @ TC = 85°C Maximum Power Dissipation 325 TJ Operating Junction Temperature Range -40 to +150 °C TSTG Storage Temperature Range -40 to +125

  • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode
  • Very low conduction and switching losses
  • HEXFRED ™ antiparallel diodes with ultra- soft recovery
  • Industry standard package
  • UL approved Benefits
  • Increased operating efficiency
  • Direct mounting to heatsink
  • Performance optimized for power conversion: UPS, SMPS, Welding
  • Lower EMI, requires less snubbing PRELIMINARY
  • Generation 4 IGBT technology www.irf.com 1 PD -5.058B

2 www.irf.com Parameter Min. Typ. Max. Units Conditions Q g Total Gate Charge (turn-on) — 903 1355 V CC = 400V, VGE = 15V Q ge Gate - Emitter Charge (turn-on) — 125 188 nC I C = 135A Q gc Gate - Collector Charge (turn-on) — 306 459 T J = 25°C td(on) Turn-On Delay Time — 342 — R G1 = 27Ω , RG2 = 0Ω, tr Rise Time — 194 — ns I C = 200A td(off) Turn-Off Delay Time — 366 — V CC = 360V tf Fall Time — 213 — V GE = ±15V Eon Turn-On Switching Energy — 12 — mJ Eoff (1) Turn-Off Switching Energy — 16 — Ets (1) Total Switching Energy — 28 39 C ies Input Capacitance — 20068 — V GE = 0V C oes Output Capacitance — 1254 — pF V CC = 30V C res Reverse Transfer Capacitance — 261 — ƒ = 1 MHz trr Diode Reverse Recovery Time — 179 — ns I C = 200A Irr Diode Peak ReverseCurrent — 120 — A R G1 = 27Ω Q rr Diode Recovery Charge — 10714 — µC R G2 = 0Ω di(rec)M /dt Diode Peak Rate of Fall of Recovery — 1922 — A/µs V CC = 360V During tb di/dt=1300A/µs Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltage 600 — — V GE = 0V, IC = 1mA VCE(on) Collector-to-Emitter Voltage — 1.8 2.2 V GE = 15V, IC = 200A — 1.9 — V V GE = 15V, IC = 200A, TJ = 125°C VGE(th) Gate Threshold Voltage 3.0 — 6.0 I C = 1.25mA ΔVGE(th)/ΔTJ Temperature Coeff. of Threshold Voltage — -11 — mV/°C V CE = VGE , IC = 1.25mA gfe Forward Transconductance „ — 175 — S V CE = 25V, IC = 200A ICES Collector-to-Emitter Leaking Current — — 1.0 mA V GE = 0V, VCE = 600V ——1 0 V GE = 0V, VCE = 600V, TJ = 125°C VFM Diode Forward Voltage - Maximum — 3.7 — V I F = 200A, VGE = 0V — 3.7 — I F = 200A, VGE = 0V, TJ = 125°C IGES Gate-to-Emitter Leakage Current — — 250 nA V GE = ±20V Dynamic Characteristics - TJ = 125°C (unless otherwise specified) Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

www.irf.com 3 0.1 1 10 100 100 120 140 f, Frequency (KHz ) LOAD CURRENT (A) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics For both: Duty cycle: 50% T = 125°C T = 90°C Gate drive as specified sink J Power Dissipation = W 60% of rated voltage I Ideal diodes Square wave: 120 100 1000 V , Collector-to-Emitter Voltage (V) I , Collector-to-Emitter Current (A) CE C V = 15V 80µs PULSE WIDTH GE T = 25 CJ ° T = 125 CJ ° 100 1000 V , Gate-to-Emitter Voltage (V) I , Collector-to-Emitter Current (A) GE C V = 25V 80µs PULSE WIDTH CE T = 25 CJ ° T = 125 CJ °

4 www.irf.com Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature Fig. 4 - Maximum Collector Current vs. Case Temperature -60 -40 -20 0 20 40 60 80 100 120 140 160 1.0 2.0 3.0 T , Junction Temperature ( C) V , Collector-to-Emitter Voltage(V) J ° CE V = 15V 80 us PULSE WIDTH GE I = A400C I = A200C I = A100C 25 50 75 100 125 150 120 160 200 240 T , Case Temperature ( C) Maximum DC Collector Current(A) C ° 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 thJCTherm al Response (Z ) t , Rectangular Pulse Duration (sec ) A D = 0.50 0.20 0.10 0.05 0.02

0.01 SINGLE PULSE

(THERMAL RESPONSE) P DM Notes: 1. Duty factor D = t / t 2. Peak T = P x Z + T 1 2 J DM thJC C

www.irf.com 5 Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Junction Temperature 0 10 20 30 40 50 R , Gate Resistance (Ohm) Total Switching Losses (mJ) G V = 360V V = 15V T = 125 C I = 200A CC GE J C ( Ω ) -60 -40 -20 0 20 40 60 80 100 120 140 160 100 1000 T , Junction Temperature ( C ) Total Switching Losses (mJ) J ° R = Ohm V = 15V V = 360V G GE CC I = A400C I = A200C I = A100C R G1 =27Ω ;RG2 = 0 Ω 0 200 400 600 800 1000 Q , Total Gate Charge (nC) V , Gate-to-Emitter Voltage (V) G GE V = 400V I = 135A CC C 1 10 100 10000 20000 30000 40000 V , Collector-to-Emitter Voltage (V) C, Capacitance (pF) CE V C C C 0V, C C C f = 1MHz + C + C C SHORTED GE ies ge gc , ce res gc oes ce gc C res C oes C ies

6 www.irf.com Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Reverse Bias SOA Fig. 13 - Typical Forward Voltage Drop vs. Instantaneous Forward Current Fig. 14 - Typical Stored Charge vs. dif/dt 0 100 200 300 400 I , Collector-to-emitter Current (A) Total Switching Losses (mJ) C R = Ohm T = 125 C V = 360V V = 15V G J CC GE R G1 =27Ω ;RG2 = 0 Ω 100 200 300 400 500 600 0 100 200 300 400 500 600 700 CE SAFE OPERATING AREA V = 20V T = 125°C GE J V , Collector-to-Emitter Voltage (V ) A VCE measured at terminal (Peak Voltage) 100 1000 FM FInstantaneous Forward Current - I (A) Forward Volta g e Drop - V (V ) T = 25°C T = 125°C J J 5000 10000 15000 20000 500 1000 1500 2000 fdi /dt - (A/µs) RRQ - (nC) R J J V = 360V T = 125°C T = 25°C I = 400A I = 200A I = 100A F F F

www.irf.com 7 Fig. 15 - Typical Reverse Recovery vs. dif/dt Fig. 16 - Typical Recovery Current vs. dif/dt 100 125 150 175 200 225 500 1000 1500 2000 trr - (ns) fdi /dt - (A/µs) I = 400A I = 200A I = 100A F F F R J J V = 360V T = 125°C T = 25°C 100 150 200 250 500 1000 1500 2000 fdi /dt - (A/µs) RRMI - (A) I = 400AF I = 200A I = 100A F F R J J V = 360V T = 125°C T = 25°C

8 www.irf.com Ic Vce t1 t2 90% Ic10% Vce td(off) tf Ic 5% Ic t1+5µS Vce ic dt 90% Vge +Vge ∫Eoff = Fig. 17b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf Vce ie dt 5% Vce Ic IpkVcc 10% Ic Vce t1 t2 DUT VOLTAGE AND CURRENT GATE VOLTAGE D.U.T. +Vg10% +Vg 90% Ic trtd(on) DIODE REVERSE RECOVERY ENERGY tx Eon = Erec = Vd id dt t4t3 DIODE RECOVERY WAVEFORMS Ic Vpk 10% Vcc Irr 10% Irr Vcc trr Qr r = trr tx id dt Fig. 17a - Test Circuit for Measurement of ILM , Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf Fig. 17c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr Fig. 17d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr Vd Ic dt Vce Ic dt Ic dt Vce Ic dt

Figure 18. Clamped Inductive Load Test Circuit Figure 19. Pulsed Collector Current

4 X IC @25°C

10 www.irf.com Case Outline — INT-A-PAK WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 3/98 Notes:  Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ‚ See fig. 17 ƒ For screws M5x0.8 „ Pulse width 50µs; single shot. Dimensions are shown in millimeters (inches)