GA200SA60S

GA200SA60S IRF | Alldatasheet

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Parameter Max. Units VCES Collector-to-Emitter Breakdown Voltage 600 V IC @ TC = 25°C Continuous Collector Current 200 IC @ TC = 100°C Continuous Collector Current 100 A ICM Pulsed Collector Current /G81 400 ILM Clamped Inductive Load Current /G82 400 VGE Gate-to-Emitter Voltage ± 20 V EARV Reverse Voltage Avalanche Energy /G83 155 mJ VISOL RMS Isolation Voltage, Any Terminal to Case, t=1 min 2500 PD @ TC = 25°C Maximum Power Dissipation 630 PD @ TC = 100°C Maximum Power Dissipation 250 TJ Operating Junction -55 to + 150 TSTG Storage Temperature Range -55 to + 150 Mounting Torque, 6-32 or M3 Screw 12 lbf in(1.3Nm) Parameter Typ. Max. Units RθJC Junction-to-Case ––– 0.20 RθCS Case-to-Sink, Flat, Greased Surface 0.05 ––– Wt Weight of Module 30 ––– gm /G47/G41/G32/G30/G30/G53/G41/G36/G30/G53 /G53/G74/G61/G6E/G64/G61/G72/G64/G20/G53/G70/G65/G65/G64/G20/G49/G47/G42/G54/G49/G4E/G53/G55/G4C/G41/G54/G45/G44/G20/G47/G41/G54/G45/G20/G42/G49/G50/G4F/G4C/G41/G52/G20/G54/G52/G41/G4E/G53/G49/G53/G54/G4F/G52 /G50/G44/G2D/G20/G35/G30/G30/G37/G30/G41 E C G n-channel FeaturesFeaturesFeaturesFeaturesFeatures  Standard : Optimized for minimum saturation voltage and low operating frequencies up to 1kHz  Lowest conduction losses available  Fully isolated package ( 2,500 volt AC)  Very low internal inductance ( 5 nH typ.)  Industry standard outline  Designed for increased operating efficiency in power conversion: UPS, SMPS, Welding, Induction heating  Easy to assemble and parallel  Direct mounting to heatsink  Plug-in compatible with other SOT-227 packages Benefits VCES = 600V VCE(on) typ. = 1.10V @VGE = 15V, IC = 100A Thermal Resistance Absolute Maximum Ratings W 4/24/2000 V °C/W SOT-227 www.irf.com 1

2 www.irf.com Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltage 600 —— VV GE = 0V, IC = 250µA V(BR)ECS Emitter-to-Collector Breakdown Voltage /G8418 —— VV GE = 0V, IC = 1.0A ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 0.62 — V/°CV GE = 0V, IC = 1.0mA — 1.10 1.3 I C = 100A VGE = 15V VCE(ON) Collector-to-Emitter Saturation Voltage — 1.33 — IC = 200A See Fig.2, 5 — 1.02 — IC = 100A , TJ = 150°C VGE(th) Gate Threshold Voltage 3.0 — 6.0 V CE = VGE, IC = 250µA ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage — -10 — mV/°CV CE = VGE, IC = 2 mA gfe Forward Transconductance /G85 90 150 — SV CE = 100V, IC = 100A —— 1.0 V GE = 0V, VCE = 600V —— 10 V GE = 0V, VCE = 10V, TJ = 150°C IGES Gate-to-Emitter Leakage Current —— ±250 nA V GE = ±20V Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge (turn-on) — 770 1200 I C = 100A Qge Gate - Emitter Charge (turn-on) — 100 150 nC V CC = 400V See Fig. 8 Qgc Gate - Collector Charge (turn-on) — 260 380 V GE = 15V td(on) Turn-On Delay Time — 78 — tr Rise Time — 56 — TJ = 25°C td(off) Turn-Off Delay Time — 890 1300 I C = 100A, VCC = 480V tf Fall Time — 390 580 V GE = 15V, RG = 2.0Ω Eon Turn-On Switching Loss — 0.98 — Energy losses include "tail" Eoff Turn-Off Switching Loss — 17.4 — mJ See Fig. 9, 10, 13 Ets Total Switching Loss — 18.4 25.5 td(on) Turn-On Delay Time — 72 — TJ = 150°C, tr Rise Time — 60 — IC = 100A, VCC = 480V td(off) Turn-Off Delay Time — 1500 — VGE = 15V, RG = 2.0Ω tf Fall Time — 660 — Energy losses include "tail" Ets Total Switching Loss — 35.7 — mJ See Fig. 10,11, 13 LE Internal Emitter Inductance — 5.0 — nH Between lead, and center of the die contact Cies Input Capacitance — 16250 — VGE = 0V Coes Output Capacitance — 1040 — pF V CC = 30V See Fig. 7 Cres Reverse Transfer Capacitance — 190 —ƒ = 1.0MHz /G84Pulse width ≤ 80µs; duty factor ≤ 0.1%. /G85Pulse width 5.0µs, single shot. Notes: /G81Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 15 ) /G82VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 2.0Ω, (See fig. 14) /G83Repetitive rating; pulse width limited by maximum junction temperature. Electrical Characteristics @ TJ = 25°C (unless otherwise specified) ICES Zero Gate Voltage Collector Current V mA Switching Characteristics @ TJ = 25°C (unless otherwise specified) ns ns

www.irf.com 3 Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) Load Current ( A ) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics 100 1000 V , Collector-to-Emitter Voltage (V) I , Collector-to-Emitter Current (A) CE C /G20 V = 15V 20µs PULSE WIDTH GE /G20T = 25 CJ ° /G20T = 150 CJ ° 100 150 200 250 0.1 1 10 100 f, Fre quenc y (kHz ) A 60% of rated voltage Ideal diodes Squar e wave: For both: Duty cycle: 50% T = 125 ° C T = 90 °C Gate drive as specified sink J Triangul ar wave: Clamp voltage: 80% of rated Power Dissi pation = 140W 100 1000 5 6 7 V , Gate-to-Emitter Voltage (V) I , Collector-to-Emitter Current (A) GE C /G20 V = 50V 5µs PULSE WIDTH CC /G20T = 25 CJ ° /G20T = 150 CJ °

4 www.irf.com Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature Fig. 4 - Maximum Collector Current vs. Case Temperature 25 50 75 100 125 150 100 150 200 T , Case Temperature ( C) Maximum DC Collector Current(A) C ° 0.001 0.01 0.1 /G20 Notes: 1. Duty factor D = t / t 2. Peak T = P x Z + T 1 2 J DM thJC C /G20 P t t DM t , Rectangular Pulse Duration (sec) Thermal Response (Z ) thJC 0.01 0.02 0.05 0.10 0.20 D = 0.50 /G20 SINGLE PULSE (THERMAL RESPONSE) -60 -40 -20 0 20 40 60 80 100 120 140 160 1.0 2.0 3.0 T , Junction Temperature ( C) V , Collector-to-Emitter Voltage(V) J ° CE /G20 V = 15V 80 us PULSE WIDTH GE /G20I = A400C /G20I = A200C /G20I = A100C

www.irf.com 5 Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 1 10 100 6000 12000 18000 24000 30000 V , Collector-to-Emitter Voltage (V) C, Capacitance (pF) CE /G20 V C C C 0V, C C C f = 1MHz + C + C C SHORTED GE ies ge gc , ce res gc oes ce gc /G20Cies /G20Coes /G20Cres Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Junction Temperature 0 10 20 30 40 50 R , Gate Resistance (Ohm) Total Switching Losses (mJ) G /G20 V = 480V V = 15V T = 25 C I = 200A CC GE J C ( Ω ) -60 -40 -20 0 20 40 60 80 100 120 140 160 100 1000 T , Junction Temperature ( C ) Total Switching Losses (mJ) J ° /G20 R = Ohm V = 15V V = 480V G GE CC /G20I = A400C /G20I = A200C /G20I = A100C RG = 2.0Ω 350A 0 200 400 600 800 Q , Total Gate Charge (nC) V , Gate-to-Emitter Voltage (V) G GE /G20 V = 400V I = 110A CC C 100A

6 www.irf.com 100 150 200 250 300 350 120 160 I , Collector Current (A) Total Switching Losses (mJ) C /G20 R = Ohm T = 150 C V = 480V V = 15V G J CC GE 100 1000 1 10 100 1000 /G20 V = 20V T = 125 C GE J o /G20 SAFE OPERATING AREA V , Collector-to-Emitter Voltage (V) I , Collector Current (A) CE C Fig. 11 - Typical Switching Losses vs. Collector Current Fig. 12 - Turn-Off SOA ΩRG = 2.0Ω

www.irf.com 7 480V

4 X IC@25°C

D.U.T. 50V L V *C /G81 /G82 * Driver same t ype as D.U.T.; Vc = 80% of Vce (max ) * Note: Due to the 50V power su pply, pulse width and inductor w ill increase to obtain rated Id. 1000V Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit 480µF960V 0 - 480V RL = t=5µsd(on)t t ft r 90% td(off) 10% 90% 10%5% VC IC E on E off ts on offE = (E +E ) /G81 /G82 /G83 Fig. 14b - Switching Loss Waveforms 50V Driver* 1000V D.U.T. IC CV /G81/G20 /G82 /G83 L Fig. 14a - Switching Loss Test Circuit * Driver same type as D.U.T., VC = 480V

8 www.irf.com 4.40 (.173 ) 4.20 (.165 ) 12.50 ( .492 ) 7.50 ( .295 ) 2.10 ( .082 ) 1.90 ( .075 ) 30.20 ( 1.189 ) 29.80 ( 1.173 ) 8.10 ( .319 ) 7.70 ( .303 )4X 15.00 ( .590 ) R FULL 2.10 ( .082 ) 1.90 ( .075 ) 0.12 ( .005 ) -C- 0.25 ( .010 ) M C A M B M 25.70 ( 1.012 ) 25.20 ( .992 ) -B- 6.25 ( .246 ) C HAM FER 2.00 ( .079 ) X 457 -A- 38.30 ( 1.508 ) 37.80 ( 1.488 ) 12.30 ( .484 ) 11.80 ( .464 ) LEAD ASSIGMENTS IGBT E C GE S D GS HEXFET A1 K2 K1 A2 HEXFRED E Dimensions are shown in millimeters ( inches ) E C IGBT G Tube QUANTITIES PER TUBE IS 10 M4 SREW AND WASHER INCLUDED IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN: 16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 4/00