GA200NS61U IRF | Alldatasheet

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VCES = 600V VCE (on) typ. = 1.8V @V GE = 15V, IC = 200A Parameter Typ. Max. Units R θJC Thermal Resistance, Junction-to-Case - IGBT — 0.20 R θJC Thermal Resistance, Junction-to-Case - Diode — 0.35 °C/W R θCS Thermal Resistance, Case-to-Sink - Module 0.1 — Mounting Torque, Case-to-Heatsink — 4.0 N m Mounting Torque, Case-to-Terminal 1, 2 & 3/G131 — 3.0 Weight of Module 200 — g Thermal / Mechanical Characteristics High Side Switch Chopper Module Ultra-FastTM Speed IGBT Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Voltage 600 V IC @ TC = 25°C Continuous Collector Current 200 ICM Pulsed Collector Current/G129 400 A ILM Peak Switching Curren/G116/G130 400 IFM Peak Diode Forward Current 400 VGE Gate-to-Emitter Voltage ±20 V VISOL RMS Isolation Voltage, Any Terminal To Case, t = 1 min 2500 PD @ TC = 25°C Maximum Power Dissipation 625 W PD @ TC = 85°C Maximum Power Dissipation 325 TJ Operating Junction Temperature Range -40 to +150 °C TSTG Storage Temperature Range -40 to +125  UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode  Very low conduction and switching losses  HEXFRED ™ antiparallel diodes with ultra- soft recovery  Industry standard package  UL approved Benefits  Increased operating efficiency  Direct mounting to heatsink  Performance optimized for power conversion: UPS, SMPS, Welding  Lower EMI, requires less snubbing  Generation 4 IGBT technology /G46 www.irf.com 1 /G80/G68/G32/G45/G57/G52/G51/G52/G55

2 www.irf.com Parameter Min. Typ. Max. Units Conditions Q g Total Gate Charge (turn-on) — 903 1355 V CC = 400V, VGE = 15V Q ge Gate - Emitter Charge (turn-on) — 125 188 nC I C = 135A Q gc Gate - Collector Charge (turn-on) — 306 459 T J = 25°C td(on) Turn-On Delay Time — 342 — R G1 = 27Ω , RG2 = 0Ω, tr Rise Time — 194 — ns I C = 200A td(off) Turn-Off Delay Time — 366 — VCC = 360V tf Fall Time — 213 — VGE = ±15V Eon Turn-On Switching Energy — 12 — mJ Inductive load Eoff (1) Turn-Off Switching Energy — 16 — Ets (1) Total Switching Energy — 28 39 C ies Input Capacitance — 20068 — VGE = 0V C oes Output Capacitance — 1254 — pF V CC = 30V C res Reverse Transfer Capacitance — 261 —ƒ = 1 MHz trr Diode Reverse Recovery Time — 137 — ns I C = 200A Irr Diode Peak ReverseCurrent — 96 — AR G1 = 27Ω Q rr Diode Recovery Charge — 6731 — µC R G2 = 0Ω di(rec)M /dt Diode Peak Rate of Fall of Recovery— 5705 — A/µs V CC = 360V During tb di/dt=1227A/µs /G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G80/G97/G114/G97/G109/G101/G116/G101/G114 /G77/G105/G110/G46 /G84/G121/G112/G46 /G77/G97/G120/G46 /G85/G110/G105/G116/G115/G32/G32/G32/G32/G32/G32/G32/G67/G111/G110/G100/G105/G116/G105/G111/G110/G115 V(BR)CES Collector-to-Emitter Breakdown Voltage 600—— VGE = 0V, IC = 1mA VCE(on) Collector-to-Emitter Voltage — 1.8 2.2 V GE = 15V, IC = 200A — 1.9 — VV GE = 15V, IC = 200A, TJ = 125°C VGE(th) Gate Threshold Voltage 3.0 — 6.0 I C = 1.25mA ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage— -11 — mV/°CV CE = VGE , IC = 1.25mA gfe Forward Transconductance/G32/G132 — 175 — SV CE = 25V, IC = 200A ICES Collector-to-Emitter Leaking Current—— 1.0 mA V GE = 0V, VCE = 600V —— 10 V GE = 0V, VCE = 600V, TJ = 125°C VFM Diode Forward Voltage - Maximum — 1.6 2.2 V I F = 200A, VGE = 0V — 1.7 — IF = 200A, VGE = 0V, TJ = 125°C IGES Gate-to-Emitter Leakage Current —— 250 nA V GE = ±20V Dynamic Characteristics - TJ = 125°C (unless otherwise specified) Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

www.irf.com 3 Fig. 1 - Typical Output Characteristics Fig. 2 - Typical Transfer Characteristics 100 1000 V , Collector-to-Emitter Voltage (V) I , Collector-to-Emitter Current (A) CE C V = 15V 80µs PULSE WIDTH GE T = 25 CJ ° T = 125 CJ ° 100 1000 V , Gate-to-Emitter Voltage (V) I , Collector-to-Emitter Current (A) GE C V = 25V 80µs PULSE WIDTH CE T = 25 CJ ° T = 125 CJ ° Fig. 4- Typical Collector-to-Emitter Voltage vs. Junction Temperature Fig. 3 - Maximum Collector Current vs. Case Temperature -60 -40 -20 0 20 40 60 80 100 120 140 160 1.0 2.0 3.0 T , Junction Temperature ( C) V , Collector-to-Emitter Voltage(V) J ° CE V = 15V 80 us PULSE WIDTH GE I = A400C I = A200C I = A100C 25 50 75 100 125 150 120 160 200 240 T , Case Temperature ( C) Maximum DC Collector Current(A) C °

4 www.irf.com Fig. 5 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Emitter Voltage Fig. 7 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 0 200 400 600 800 1000 Q , Total Gate Charge (nC) V , Gate-to-Emitter Voltage (V) G GE V = 400V I = 135A CC C 1 10 100 10000 20000 30000 40000 V , Collector-to-Emitter Voltage (V) C, Capacitance (pF) CE V C C C 0V, C C C f = 1MHz + C + C C SHORTED GE ies ge gc , ce res gc oes ce gc C res C oes C ies 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 thJCThermal Response (Z ) t , Rectangular Pulse Duration (sec) A D = 0.50 0.20 0.10 0.05 0.02

0.01 SINGLE PULSE

(THERMAL RESPONSE) P DM Notes: 1. Duty factor D = t / t 2. Peak T = P x Z + T J DM thJC C

www.irf.com 5 Fig. 8 - Typical Switching Losses vs. Gate Resistance Fig. 9 - Typical Switching Losses vs. Junction Temperature 0 10 20 30 40 50 R , Gate Resistance (Ohm) Total Switching Losses (mJ) G V = 360V V = 15V T = 125 C I = 200A CC GE J C ( Ω ) -60 -40 -20 0 20 40 60 80 100 120 140 160 100 1000 T , Junction Temperature ( C ) Total Switching Losses (mJ) J ° R = Ohm V = 15V V = 360V G GE CC I = A400C I = A200C I = A100C /G82/G71/G49/G61/G50/G55Ω /G59/G82/G71/G50/G32/G61/G32/G48/G32Ω Fig. 10 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 11 - Reverse Bias SOA 0 100 200 300 400 I , Collector-to-emitter Current (A) Total Switching Losses (mJ) C R = Ohm T = 125 C V = 360V V = 15V G J CC GE /G82/G71/G49/G61/G50/G55Ω /G59/G82/G71/G50/G32/G61/G32/G48/G32Ω 0 100 200 300 400 500 600 700 VCE , Collector-to-Emitter Voltage (V) 100 200 300 400 500 600 IC, Collector-to-Em itter Current (A) VGE = 20V TJ = 125° VCE measured at terminal (Peak Voltage) SAFE OPERATING AREA

6 www.irf.com Fig. 14 - Typical Forward Voltage Drop vs. Instantaneous Forward Current Fig. 12 - Typical Reverse Recovery vs. dif/dt Fig. 13 - Typical Recovery Current vs. dif/dt Fig. 15 - Typical Stored Charge vs. dif/dt 500 1000 1500 2000 dif / dt - (A / µs) 120 160 IRRM - (A) VR = 360V TJ = 125°C TJ = 25°C IF = 400A IF = 200A IF = 100A 500 1000 1500 2000 dif / dt - (A / µs) 100 200 300 trr - (ns) VR = 360V TJ = 125°C TJ = 25°C IF = 400A IF = 200A IF = 100A 500 1000 1500 2000 dif / dt - (A / µs) 2000 4000 6000 8000 10000 12000 Qrr - (nC) VR = 360V TJ = 125°C TJ = 25°C IF = 400A IF = 200A IF = 100A Forward Voltage Drop - VF ( V ) 100 1000 Instantaneous Forward Current - IF ( A ) TJ = 125°C TJ = 25°C

www.irf.com 7 Ic Vce t1 t2 90% Ic10% Vce td(off) tf Ic 5% Ic t1+5µS Vce ic dt 90% Vge +Vge ∫Eoff = Fig. 16b - Test Waveforms for Circuit of Fig. 16a, Defining Eoff, td(off), tf ∫Vce ie dt 5% Vce Ic IpkVcc 10% Ic Vce t1 t2 DUT VOLTAGE AND CURRENT GATE VOLTAGE D.U.T. +Vg10% +Vg 90% Ic trtd(on) DIODE REVERSE RECOVERY ENERGY tx Eon = Erec = Vd id dt t4t3 DIODE RECOVERY WAVEFORMS Ic Vpk 10% Vcc Irr 10% Irr Vcc trr Qrr = trr tx id dt Fig. 16a - Test Circuit for Measurement of ILM , Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf Fig. 16c - Test Waveforms for Circuit of Fig. 16a, Defining Eon, td(on), tr Fig. 16d - Test Waveforms for Circuit of Fig. 16a, Defining Erec, trr, Qrr, Irr /G86/G100/G32/G73/G99/G32/G100/G116 /G86/G99/G101/G32/G73/G99/G32/G100/G116 /G32/G73/G99/G32/G100/G116 /G86/G99/G101/G32/G73/G99/G32/G100/G116 L Rg2 Rg1 Vcc -Vg2 +Vg2 Vcc=60% of BVces Ls= L1+L2+L3 Vge=15V DUT

www.irf.com 9 Notes: /G129Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. /G130See fig. 16 /G131For screws M5x0.8 /G132Pulse width 50µs; single shot. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.11/01 Case Outline — INT-A-PAK 32.00 31.00 [ 1.260 1.220] 24.00 23.00 .945 .906] 30.50 29.00 1.201 1.142] 92.10 91.10 [ 3.626 3.587] 8.00 6.60 .315 .260] 8.65 7.65 [ .341 .301] 94.70 93.70 3.728 3.689] 2X 23.50 22.50 [ .925 .886] 80.30 79.70 3.161 3.138] 17.50 16.50 .689 .650] 42.00 41.00 [ 1.654 1.614] 1. A LL DIM ENSIO NS A RE SHO W N IN M ILLIM ETERS [INC HES]. 2. CONT ROLLING DIMENS ION: MILLIMET ER. NOT ES : 4X F AS TON TAB (110) 3X M5 8 [.314] MAX. 2X Ø 6.80 6.20 [ .267 .244] 4.50 3.50 [ .177 .138] 321 34.70 33.70 [ 1.366 1.327] 2X 13.30 12.70 [ .524 .500] 0.15 [.0059] CONVEX