GA200HS60S IRF | Alldatasheet

Document overview

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Technical content

Features

  • Increased operating efficiency
  • Direct mounting to heatsink
  • Performance optimized as output inverter stage for TIG welding machines Benefits INT-A-PAK www.irf.com

Bulletin I27121 rev. B 07/02 2 www.irf.com TJ Operating Junction Temperature Range - 40 150 °C TSTG Storage Temperature Range - 40 125 RthJC Junction-to-Case 0.15 °C/ W RthCS Case-to-Sink 0.1 T Mounting torque Case to heatsink 4 Nm Case to terminal 1, 2, 3 3 Weight 185 g VCES Collector-to-Emitter Breakdown Voltage 600 V V GE = 0V, I C = 1mA VCE(on) Collector-to-Emitter Voltage 1.19 1.25 V GE = 15V, I C = 200A 1.17 - V GE = 15V, I C = 200A, T J = 125°C VGE(th) Gate Threshold Voltage 3 6 I C = 0.5mA ICES Collector-to-Emiter Leakage 1 mA V GE = 0V, V CE = 600V Current 10 V GE = 0V, V CE = 600V, T J = 125°C IGES Gate-to-Emitter Leakage Current ± 250 nA V GE = ± 20V Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameters Min Typ Max Units Test Conditions Qg Total Gate Charge 1600 1700 nC I C = 200A Qge Gate-Emitter Charge 260 340 V CC = 400V Qgc Gate-Collector Charge 580 670 V GE = 15V Eon Turn-On Switching Loss 27 mJ IC = 200A, VCC = 480V, VGE = 15V Eoff Turn-Off Switching Loss 47 Rg = 10Ω Ets Total Switching Loss 74 free-wheeling DIODE: 30ETH06 Eon Turn-On Switching Loss 29 31 mJ IC = 200A, VCC = 480V, VGE = 15V Eoff Turn-Off Switching Loss 77 90 Rg = 10Ω Ets Total Switching Loss 106 121 free-wheeling DIODE: 30ETH06, TJ = 125°C Cies Input Capacitance 32500 pF V GE = 0V Coes Output Capacitance 2080 V CC = 30V Cres Reverse Transfer Capacitance 380 f = 1.0 MHz Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameters Min Typ Max Units Test Conditions Thermal- Mechanical Specifications Parameters Min Typ Max Units

Bulletin I27121 rev. B 07/02 GA200HS60S www.irf.com Fig. 1 - Typical Output Characteristics IC, Collector-to-Emitter Current (A) VCE, Collector-to-Emitter Voltage (V) Fig. 2 - Typical Transfer Characteristics IC , Collector-to-Emitter Current (A) VGE, Gate-to-Emitter Voltage (V) Fig. 4 - Typical Collector-to-Emitter Voltage vs. Junction Temperature VCE, Collector-to-Emitter Voltage (V) TJ , Junction Temperature (°C) Fig. 3 - Maximum Collector Current vs. Case Temperature Maximum DC Collector Current (A) TC, Case Temperature (°C) 100 1000 Vge = 15V T = 25˚C T = 125˚C J J 100 1000 5678 Vce = 10V 380µs PULSE WIDTH T = 25˚C T = 125˚CJ J 0.5 1.5 20 40 60 80 100 120 140 160 I = 400A I = 200A I = 120A C C C 120 160 200 240 280 320 360 400 440 480 520 25 50 75 100 125 150

Bulletin I27121 rev. B 07/02 4 www.irf.com Fig. 5 - Typical Gate Charge vs. Gate-to- Emitter Voltage VGE, Gate-to-Emitter Voltage (V) QG, Total Gate Charge (nC) 0 300 600 900 1200 1500 1800 Vcc = 400V Ic = 200A Fig. 6 - Typical Switching Losses vs Gate Resistance Switching Losses (mJ) RG, Gate Reistance (Ω ) Fig. 7 - Typical Switching Losses vs Collector-to-Emitter Current Switching Losses (mJ) IC, Collector-to-Emitter Current (A) 0 40 80 120 160 200 Eon Eoff Tj = 125˚C Vce = 480V Vge = 15V Rge = 10 Ω Free-wheeling diode: 30ETH06 0 1 02 03 04 05 0 Eoff Eon Tj = 25˚C, Vce = 480V Vge = 15V, Ic = 200A free-wheeling diode: 30ETH06

Bulletin I27121 rev. B 07/02 GA200HS60S www.irf.com Outline Table Dimensions in millimeters Electrical DiagramFunctional Diagram Note: terminals 9 and 11 are not internally connected terminals 8 and 10 are not assembled in the package

Bulletin I27121 rev. B 07/02 6 www.irf.com IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 07/02 Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site. GA 200 H S 60 S Device Code 1 2 3 4 5 Ordering Information Table 1 - Essential Part Number IGBT modules 2 - Current rating (200 = 200A) 3 - Circuit Configuration (H = Half Bridge without f/w diode) 4 - Int-A-Pak 5 - Voltage Code (60 = 600V) 6 - Speed/ Type (S = Standard Speed IGBT)