GA1L4Z NEC | Alldatasheet
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_—- 3 * DATA SHEET ; cor / GA1L4Z MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR
FEATURES
PACKAGE DIMENSIONS © Resistor Built-in TYPE c in millimeters B | 2140.1 Ry Ry = 47kO 1.25+0.1 E 3 © Complementary to GN1L4Z Ss E{+- alse gq] ABSOLUTE MAXIMUM RATINGS a8] - —- + Maximum Voltages and Currents (T, = 25 °C) “ g 2 3 3 Collector to Base Voltage Veso 60 Vv =o ' a Collector to Emitter Voltage Vceo 50 Vv Emitter to Base Voltage Veso 5 Vv o Marking Collector Current (DC) Ic 100 mA oF e Collector Current (Pulse) Ic 200 mA @ 3 38 Maximum Power Dissipation a 3 Total Power Dissipation ° at 25 °C Ambient Temperature Pr 150 mW 1: Emitter ey Maximum Temperatures ° 2: Base 8 Junction Temperature Tj 150 Cc $+ Collector ° Storage Temperature Range Teta -55to+150 °C ELECTRICAL CHARACTERISTICS (T, = 25 °C) @ | cotectorcutorr current | icp | 100 | na | Vea = 80. 1e-0 DC Current Gain [reo | 100 | 260 | | | Vce=soviic-soma | [a7 [|v | vee=o2vite=s0ma | * Pulsed: PW = 350 us, Duty Cycle $2 % : hee Classification | [Menke [tsi] a? [13 @ reer [185 16270 | 20010 100 | 2001 6 ‘NEC cannot assume any responsibility for any circuits shown or represent that they are free from patent infringement. © NEC Corporation 1988 i i
é GA1L4Z eb cs Pa NEC utectron vevice TYPICAL CHARACTERISTICS (T, = 25 °c) ay x i a COLLECTOR CURRENT vs. veo pe a fp st 2 ott | | tT Tt ol Sf | Lee gto | TT TT ¢ Tee 3 yo —TN e pe _ a KLE TTT I a ee a” XI eel | ca NE nn) (ee 2 7 FENG | | Aan a 80 S 8 20 40 uA = a) (aa 2 ot 1 TTIN | 1 s JEEP eee ee oe a A FP CPPeeee Ke SS =
20 LE ELEELEETS yr Ty TT y yy ft
Larry 0 20 40 60 80 100 120 140 160 180 ° 20 40 60 30 To se Ta—Ambient Temperature —"C Vee —Collector to Emitter Voltage—V _ COLLECTOR TO EMITTER VOLTAGE vs. DC CURRENT GAIN vs. COLLECTOR CURRENT COLLECTOR CURRENT “TLL LULU TTT [vee=20¥] CE = > Coo a | B °* y y rooef fd Ltt ttt | 3 3 eee | Boos sv {|_| [vin=10v Bo eH | e LETT YY aia)
2 CLITA oe ee
i camer, :
3 A | | Tt E
8 LA 100 Fp} pp
uot | YA Ft oO ” 7 = aS SS A NO | > /| a A OS WY a Oe AL| [Titty oC i oo ° 10 20 30 40 50 10 30 10 30 100 - \\g—Collector Current —mA Ig —Collector Current ~mA eo COLLECTOR SATURATION VOLTAGE vs. INPUT VOLTAGE vs. COLLECTOR CURRENT 10, COLLECTOR CURRENT 0 oo _ ESS con SSS aaa 1 aS A SO OS 5 KF gt @ CE & a A re ee TV 7) | 2 Oca con Poot AZ e -_ LIU TO 7 LPO nh s Y 8 , th
5 Ses ea a —— oe ee easel
| 3 PH EH - os rs ee =a occ B Lee eTH TT 02 ; sat LTTE | LTH | LT TTA) @ g 0.1) 005 30 10 30 100 1 2 5 i0 20 50 100 I¢—Collector Current —mA '¢—Collectar Current—mA
NEC aicraon vevice GA1L4Z ' t ) COLLECTOR CURRENT vs. RESISTOR vs. INPUT VOLTAGE AMBIENT TEMPERATRUE 1000 pe 100 SSSSS=>SSiaas A FA sof < ne 80) eel = 100 Let iA} | | g : SSS SSS a = 60 or ee | 5 ae ea 3 g “CP ETT rrr yy 3 S 40 $ ott tft - ] E+ 20 ee Pty Ty Pr Pe P LETT TTT TTT =) 0 02 O04 06 08 10 12 25 0 25 50 75 100 = Vin—Input Voltage—V Ta—Ambient Temperature—"C ee |
- GAUAZ sss comme eo | oo e TC-2171 April 1988M ae Printed in Japan ;