GA1L4M NEC | Alldatasheet

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_ GA1L4M MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR oe | FEATURES PACKAGE DIMENSIONS © Resistors Built-in TYPE in millimeters | c 2140.1 8 1.25+0.1 mek Ry =47kQ re : Ra =47kQ ald Sl \\ © Complementary to GN1L4M Paras) = ' alco . + “Ho ' n g 3 del ABSOLUTE MAXIMUM RATINGS fit- | 3] | Maximum Voltages and Currents (Ta=25 °C) ' _ ' Collector to Base Voltage Vcso 60 Vv Collector to Emitter Voltage Vceo 50 Vv - 1 ” Marking. H Emitter to Base Voltage Veso 10 Vv r , 2 “ee Collector Current (DC) Ic 100 mA | 3 FES | Collector Current (Pulse) Ic 200 mA 1 3 1 Maximum Power Dissipation | © 4 Total Power Dissipation | 3 | at 25 °C Ambient Temperature Py 150 mW | 1: Emitter 2 ; | > Maximum Temperatures | 2 oe or ole i Junction Temperature Tj 150 °c a Marking: £31" 4 ° Loa ee Storage Temperature Range Tstg —55 to +150 Cc e ELECTRICAL CHARACTERISTICS (Tg =25 °c) CHARACTERISTIC symeoL | min. | Tye. | Max. | UNIT TEST CONDITIONS Collector Cutoff Current Ibo [| [ 100 | nA | Vce= 50 V, Ip =0 DC Current Gain heen’ eae 7 Vce = 5.0 V, Ic = 5.0mA Collector Saturation Voltage [vce |_| 0.04 | Ic = 5.0 mA, Ig = 0.25 mA Low-Level Input Voltage [vu [is tor | 08 |v | vce=50v,Ic=100Ha : High-Level Input Voltage V_| Vee =02V, I¢=5.0mA bremerteie aes oe Po | @ * Pulsed: PW <350 us, Duty Cycle < 2% NEC cannot assume any responsibility for any circuits shown or represent that they are free from patent infringement. © NEC Corporation 1988 en

a TYPICAL CHARACTERISTICS (T = 25 °C) Syed a ent vs TOTAL POWER DISSIPATION vs. EOLLECTOR Fo EMITTER VOLTAGE @ 200 50, — LT Tet Ty yy Le Job TT | 2 4 aa p= oe oft I 8 wt | | TTT 2 [VLD eT § TON E —— | ee eeee alae == a L PsCEEN Pere E : Ki 3 | ff 7 i | ty 5 100 | : Pt TINT 2 ——=| 2 6 EN 2 ad fe ay | PeereeePNcee] |b EEE aN Pee | ann TT TT Litt it ti Ke | root oo -200 20 40 60 80 100 120 140 160 180 oO 2.0 4.0 60 8.0 10 e Ta—Ambient Temperature —"C VcE-Collector to Emitter Voltage—V COLLECTOR TO EMITTER VOLTAGE vs. OC CURRENT GAIN vs. COLLECTOR CURRENT COLLECTOR CURRENT 0.5; 1000} eS SS a Soe 7 To aes eee Poo ao tT oa Pe $00) Lee PCC pe fete] ee s Zz _ - COOOL 5 sot. LAA TTT B og [| é GY ELOY EL Fe ed A 2 5 02 /\\ ty 8 ~— a 4 | 1/7 aa ee a A 3 |Z w a A SO AAT ae | S°T MrT TT of — | y ° 10 20 30 40 30 1.02.0 50 1020 50 100 r I¢-Collector Current —mA. I¢—Collector Current—mA COLLECTOR SATURATION VOLTAGE vs. INPUT VOLTAGE vs. COLLECTOR CURRENT COLLECTOR CURRENT 10 errr 50) F—F FF J a - ESS ero | Cece tH poe a Fy a A 20] 2 COCO eo . s ot | LIT TTT i 3 3 LE — FH ee=02 vt 8B on | | 2 50 Pr ce | 3 — oo oo oo Zs cH = || TT TT %S oosp—__| TTT weet c | | e271 TT

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a a! os {FFF + 20 es a A | oo en i || “ roL T/L | TT YT TTT r 04 06 08 1.0 12 14 16 -25 0 25 50 75 100 Vin-Input Voltage—V Ta—Ambient Temperature—"C SWITCHING TIME vs COLLECTOR CURRENT 89°C Tine v Ht Veo=5 V @ : UTNE TT e rof ft NE Bia FSH 2 os eee Ost tee Neen 3 °C na ee 2 a, Stiin tt ~ eee aes ee as ¥ aS SS SO SS RS @ 10-20 50 10 20 50 100 “ I~ Collector Current mA. e - ee

__ GA! Lam NEC ELECTRON DEVICE | ® e e Ld TC—2170 April 1988M Printed in Japan