GA1L3Z NEC | Alldatasheet

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DATA SHEET . MEG GA1L3Z RESISTOR BUILT-IN TYPE NPN TRANSISTOR f = BEATURES | PACKAGE DIMENSIONS | @ Resistor Built-in TYPE c | in millimeters | B | Ry =4.7kQ 2140.1 | Ry 1.25+0.1 E ry | © Complementary to GN1L3Z El} als gq ABSOLUTE MAXIMUM RATINGS sl & Sle] 3 -— -48 Maximum Voltages and Currents (Tq = 25 °C) , 8 #2 . 3 Collector to Base Voltage Veso 60 v c) $3 . | =E . ” Collector to Emitter Voltage VcEO 50 Vv ° Emitter to Base Voltage Veso 5 v j *) Collector Current (DC) Io 100 mA | | . | Marking | Collector Current (Pulse) lo 200 mA @ \\ 3 Maximum Power Dissipation | 4 38s | Total Power Dissipation q ® | at 25 °C Ambient Temperature Py 150 mW d 3 (8 2 Maximum Temperatures | S | Junction Temperature Tj 150 °c 1: Emitter 2 A Pa Storage Temperature Range Tog —55 to +150 Cc 2: Baw 3 Gl | 3: Collector ]

6 ELECTRICAL CHARACTERISTICS (T, = 25 °C)

CHARACTERISTIC | SYMBOL | MIN. | TYP. | MAX. TEST CONDITIONS Collector Cutoff Current _| 100 | na __| Vop=50V,le=0 DC Current Gain hees* 450 600 | Voce = 5.0 V, I¢ = 5.0 mA DC Current Gain ne?" 380 | Vce = 5.0 V, Io = 50 mA Collector Saturation Voltage | VCE(sat)* ee ee 02 v Ic = 5.0 mA, Ig = 0.25 mA High-Level Input Voltage Vin® [12 | on | lov Ve = 0.2 V, Ic = 5.0 mA ‘Turn-on Time [003 | 02 | Vec=5V. Vin=5V Turn-off Time [60 | us | PW~2us, Duty CycleS2% * Pulsed: PW <350 ys, Duty Cycle $2 % , r hee Classification NEC cannot assume any responsibility for any circuits shown or represent that they are free from patent infringement. © NEC Corporation 1988 eee

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'¢— Collector Current —mA Ig—Collector Current mA e COLLECTOR SATURATION VOLTAGE vs. INPUT VOLTAGE vs.

10 COLLECTOR CURRENT 20 COLLECTOR CURRENT

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: NEC tctron vevice GA1L3Z COLLECTOR CURRENT vs. SWITCHING TIME vs, INPUT VOLTAGE COLLECTOR CURRENT

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GA1L3Z _ NEC ascrnon' vevice e C ) a TC—2168 April 1988M Printed in Japan a