GA1L3N NEC | Alldatasheet
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= / GA1L3N | MEDIUM SPEED SWITCHING | RESISTOR BUILT-IN TYPE NPN TRANSISTOR pO nnn REATURES | PACKAGE DIMENSIONS | @ Resistors Built-in TYPE | in millimeters c 2140.1 B 1.25401 Ry = 4.7kQ : Ri Rp = 10kQ ! R; e et | be alsd 8 © Complementary toGN1L3N oti] Oo — | alale - oo a qo 33] | ABSOLUTE MAXIMUM RATINGS ET | | | Maximum Voltages and Currents (Ta =25 °C) { Collector to Base Voltage Veso 60 Vv | Collector to Emitter Voltage Vceo 50 Vv : Marking | Emitter to Base Voltage. VeBO 5 Vv o t ) 3 . | Collector Current (DC) Io 100 mA 3 38 Collector Current (Pulse) le 200 mA FY 3 | Maximum Power Dissipation ° Total Power Dissipation F) | at 25 °C Ambient Temperature Pr 150 mw 1: Emitter 2 Maximum Temperatures 2: ° | ‘i io | 2:Be00 Marking: Us2 | Junction Temperature Tj 150 *c — dt Storage Temperature Range Tstg —55 to +150 Cc ELECTRICAL CHARACTERISTICS (Ta = 25 °C) Collector Cutoff Current [icao | [100 | nA | Vcp=50V,IE=0 DC Current Gain [heer | | 100 | Vee = 5.0 V, Ic = 5.0 mA | A @ * Pulsed: PW < 350 us, Duty Cycle < 2% NEC cannot assume any responsibility for dhy circuits shown or represent that they are free from patent infringement. © NEC Corporation 1988
GA1L3N NEC ttectron oevice TYPICAL CHARACTERISTICS (Tg = 25 °C) AMBIENT TEMPERATURE COLLECTOR TO EMITTER VOLTAGE 200 50 — — ft ttt? te [| Aer | LEE a pore | E60 |_| Pity yt ‘o aa J 3 120 | a Gee ee 2g 2 © 30 160 aa 5 100 ° anes —+ g \\ [| | | s | i Ta nA ne f NT aam| [| P=ttcH KT “ee 20 \\ Si Za8 | Ltt BNE ri TT yee TTT -200 20 40 60 80 100 120 140 160 180 0 2 4 6 Ey 10 r ) Tg—Ambient Temperature —"C Voce —Collector to Emitter Voltage—V : COLLECTOR TO EMITTER VOLTAGE vs. DC CURRENT GAIN vs. “TTT LLU “[vcesow TT TT Con cot od ins TU aa BCC ™ ati : of Baill 3 ! Seep pe 7 ee ee r % 03 7 oF — A eC ULL 7 2 a a 2 /| £ 50 re | ee SPT VI AY & 9 to § os Sr 8 Cova s Kee |_| bao ZUM PTT got ae = Pde L— — A i ee ss sete ee! score 0 20 40 60 80 100 10-20 5.0 10 20 50-100 e I¢—Collector Current mA I¢—Collector Current mA. COLLECTOR SATURATION VOLTAGE vs. INPUT VOLTAGE vs. | Opn 1 NT SSS SS SS toe | SSSaa tS Sear i a [oe ee ee | oe 5 7 & a ee ee a | A | 2 (Ce . Pee ei | - LU ip ee Lye ||| ; if en Zaiilll
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gon} CC eS cin o e ol 00's 30 io 30 00 1 2 5 10 20 50-100 I¢-—Collector Current—mA . \\¢—Collector Current —mA pF 7 |
NEC tuectron vevice GA1L3N COLLECTOR CURRENT ve. RESISTOR ve INPUT VOLTAGE AMBIENT TEMPERATURE ESS SS SSS] veeso | ——— a a a a 1 a e | 5 ot Et 2 a) ee ¢ g eee oon eee | 2 Fee SSeS aaa ge CoCo ge i 3 = Hae Sa Sa eaee L | tL | =o oe =F] {oo COA @ 1 9a 0808 0 -25 0 25 50 75 100 . Vin— Input Voltage—V Ta—Ambient Temperature—“C | e
r | e | . - TC—2167 April 1988M. Printed in Japan a