GA1L3M RENESAS | Alldatasheet
Document overview
- Manufacturer or author: Renesas Electronics Corporation
- PDF pages: 4
Technical content
i / SILICON TRANSISTOR | | MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR | a | FEATURES PACKAGE DIMENSIONS i @ Resistors Built-in TYPE in millimeters c 2.1401 | 8 1.2540.1 : R Ry = 4.7 kO . 1 R2 =4.7kQ | Re Ely ; E alsd 8] | @ Complementary to GN1L3M Sel rr : aehs : “TH a ga | 3s] | ABSOLUTE MAXIMUM RATINGS H 24 tL a ' Maximum Voltages and Currents (Ta = 25 °C) | Collector to Base Voltage Vcso. 60 Vv Collector to Emitter Voltage Vceo 50 Vv » Marking | Emitter to Base Voltage Vepo 10 Vv ; Ss e Collector Current (DC) Io 100 mA 3 35 Collector Current (Pulse) Io 200 mA ra i a 3 | Maximum Power Dissipation © Total Power Dissipation 3 | at 25 °C Ambient Temperature Pr 150 mW 1: Emitter 2 Maximum Temperatures 2: Base °| | . °, 3: Colector Marking: £81 | Junction Temperature Tj 150 oc an nn ne Storage Temperature Range Tstg —55 to +150 Cc ELECTRICAL CHARACTERISTICS (Ta = 25 °C) | DC Current Gain hret" 2 | 4 | e | Vee = 5.0 V, Ic =5.0mA j | DC Current Gain bFEQ* 7o | 140 | VcE = 5.0 V, Ic =50 mA Collector Saturation Voltage | Vc tsat)* 008 | 03 | V__|itc=5.0mA,tg=0.25mA Low-Level Input Voltage ViLt 1 0.8 Vv | VcE=5.0V, Ic = 100 HA [ore muro [vin | 90 | 48 | [trout Resistor | a9 fa [eas [ke [eirmod ava | 08 [vo [| | * Pulsed: PW < 350 us, Duty Cycle = 2% ; NEC cannot assume any responsibility for any circuits shown or represent that they are free from patent infringement, © NEC Corporation 1988
TYPICAL CHARACTERISTICS (T, = 25 °c) AMBIENT TEMPERATURE COLLECTOR 10 EMITTER VOLTAGE 200 50, = 7 TL wot | TTT TT, LT eer TT
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geal LI il , * sek LTE | i ll 0.01 ol ' 10 3.0 10 30 100 1 2 5 10 20 50 100 i I¢—Collector Current —1mA I¢—Collector Current— mA : |
COLLECTOR CURRENT vs. RESISTOR vs. INPUT VOLTAGE AMBIENT TEMPERATURE 1000 10) SSS SSSA vcemsov | =SSSSSSa 5 ++ + + + EE Fr) a A [TI a Bo tof === g § SESS eee 3 | SSS] Poor $ 0 er Se = ee ee ee ee =————-. a0 ES Aan 20 ry Pre ed ae iA TT TAT TET TT 04 0.6 08 10 12 14 1.6 25 0 25 50 ri 100 Vin— Input Voltage—V Ta—Ambient Temperature °C SO ;
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