GA1L3M NEC | Alldatasheet
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RESISTOR BUILT-IN TYPE NPN TRANSISTOR | [7 EATURES | PACKAGE DIMENSIONS | @ Resistors Built-in TYPE : in millimeters c 21401 | 8 1.2520.1 i A Ry = 4.7 k2 1 Ro =4.7kQ. ! R @ ry ' 2 OE aled 8 © Complementary to GN1L3M az] 5 Lo gel #5 co g 2 331 | ABSOLUTE MAXIMUM RATINGS \\ E{+- | ba ' Maximum Voltages and Currents (Ta=25 °C) i | Collector to Base Voltage VcBo 60 Vv H Collector to Emitter Voltage Vceo 50 Vv an © Marking Emitter to Base Voltage VesBo 10 Vv @ Ss e Collector Current (DC) Io 100 mA 3 39, i Collector Current (Pulse) Ic 200 mA + fy | Maxi P Dissipati a 3 | laximum Power Dissipation © : Total Power Dissipation i Fy | at 25 °C Ambient Temperature Py 150 mW 1: Emitter 2 | Maximum Temperatures | 2:8 ° - ° 3: Collector Marking: 81 | Junction Temperature Tj 150 c a a Storage Temperature Range Tstg —55 to +150 c ELECTRICAL CHARACTERISTICS (Ta = 25 °C) | [oc conencsin ies | 70 | wo || vee Svs t¢=soma [Hiartne! iat Vorne [M90 | us [|v | Vee=oav.le=soma [Reorneie id Re|08 | —_ @ * Pulsed: PW < 350 us, Duty Cycle < 2% NEC cannot assume any ‘responsibility for any circuits shown or represent that they are free from patent infringement. © NEC Corporation 1988
GA1L3M NEC ttectron vevice TYPICAL CHARACTERISTICS (T, = 25 °c) TOTAL POWER DISSIPATION vs. vs AMBIENT TEMPERATURE COLLECTOR TO EMITTER VOLTAGE ® 200 50 = x —— ot +111 tT Tf [ [fe EEE zo |] ] yt JA Ta = : | VA pil (=e 7 s=-- oe : < a) aan KEE & fren é [|_| € | a” FEENGEEEE Pee seo \\ 7 eee Fy 5 == LIN | ici 2 \\ | oe 3 \\ | ee | 3 60 iz & Yeon] 2a Nee ~ off _ es J-CCEP EEE ES
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; BN E50 00000) -20 0 20 40 60 80 100 120 140 160 180 oO 2 4 6 8 10 eo Ta—Ambient Temperature —"C VcE—Collector to Emitter Voltage—V COLLECTOR TO EMITTER VOLTAGE vs. OC CURRENT GAIN vs. COLLECTOR CURRENT COLLECTOR CURRENT 05 500 TTLLILLULL reso TT . acne a Be 200 L—{ EP Pee $e — LI LAT 3 © 100 oe a Es PEA Be eee @ & 4 3 soh——t tee tH 2 50 2 tit ITTY LA 3 Ho 3 | | | er i I L, A PT a u g pa 4 pa ae A w OL 5E— Oe PALI TT e nop ff Et A || —a eee SSE ral eS OS oO 20 40 60 80 100 ste) 1.0 2.0 5.0 10 20 50 100 ry I¢—Collector Current—mA. I¢—Collector Current—mA. COLLECTOR SATURATION VOLTAGE vs. INPUT VOLTAGE vs. Eettecron cOnMENT COLLECTOR CURRENT FEE c=1018 | rrr . SSS one | == Eee 2 os 1 TE Tr > Ett Aa
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| & Poe rrrine ZH ie a He 4 oss ro I} anni HHH é PTT ot — | ETT PT oe ll 0.01 0.1 1.0 3.0 10 30 100 1 2 5 10 20 50 100 I¢—Collector Current —mA I¢—Collector Current—mA.
r COLLECTOR CURRENT vs. RESISTOR vs. INPUT VOLTAGE AMBIENT TEMPERATURE 1000 19 SSS SS SSA vce-sov | | Popo | ee oo 300) ee 80 «ott q ¢ OR SSS SS SS SS g . eee eee 7 60 5 ee co 3 || i A i |
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10 pt « = — SS RS A SS SO 3.0 ee) 20 FRESE nan iLL TTA TTT Tt @ 04 0.6 08 10 12 14 16 25 0 25 50 75 100 Vin~ Input Voltage—V Ta—Ambient Temperature—°C_
a GA1L3M _ NEC sicrnon vevice e Te-2166 April 1988M i Printed in Japan |